含镁多元合金阴极绿色磷光有机电致发光器件

为进一步提高有机电致发光器件(OLED)电子载流 子的注入水平,简化制备工艺,采用Ca:Mg:Al三元合金作为OLED阴极,制备了结构为ITO/Mo O₃/NPB/TCTA/CBP:GIr1/TPBi/Alq₃/Mg(x%):Ca:Al的绿色磷 光OLED,分析了Mg在提高器件电子注入水平、平衡载流子浓度中的作 用及其原理。实验通过优化合金阴极中Mg的含量,得到了亮度为41830cd/m²、电流效率稳定在26cd/m²左右的高效稳定的绿色磷光O LED。     

有机材料DCJTB在分层点粉中对白光LED发光特性的影响

通过在LED芯片上涂敷有机材料DCJTB,然后点YAG荧光粉的方法来研究白光LED分层点粉的激发光谱,其中DCJTB的混合质量分数分别为0、1%、2%、3%、5%、10%。结果表明,随着DCJTB混合浓度的增加,550～750nm波段的黄光、红光区域峰值明显增加且在600nm附近达到最大值,光谱色坐标从白光区域（0.2856、0.2883）向红光区域（0.4373、0.3377）移动,其LED的显色指数达到峰值88.2。因此采用分层点粉的方式可以使LED芯片发出的能量激发有机材料DCJTB,使得到的红光与芯片剩余能量激发YAG荧光粉的黄光组合得到显色指数较好的白光。     

HAT-CN作为空穴注入层的高效白色荧光有机电致发光二极管(英文)

制作了HAT-CN作为空穴注入层的蓝、黄二基色分离的堆叠式高效有机发光二极管,器件结构为:ITO/2-TNATA或HAT-CN(x nm)/NPB(25nm)/ADN(30nm)∶TBPE(2%)∶DCJTB(1%)/Alq3(20nm)/LiF(1nm)/Al(100nm)。实验结果表明,HAT-CN对载流子的注入和色纯度的影响很明显。相比于传统器件将CuPc和2-TNATA作为空穴注入层,HAT-CN作为空穴注入层得到了更高的效率和色纯度,CIE色坐标x=0.330 9,y=0.347 2,电流效率达到6.4cd/A。     

白色磷光OLEDs的制备及性能研究

采用蓝色、黄色磷光混色的发光方式实现白光有机电致发光器件(OLEDS),其中黄色发光层由红色和绿色磷光材料混合而成,器件的结构为ITO/MoO3(30nm)/NPB(40nm)/mCP:FIrpic(8%)(50nm)/CBP:R-4B(1%):GIrl(14%)(xnm)/BCP(10nm)/AlQ(40nm)/LiF(1nm)/Al(100nm)(x=2,3,4,5,6nm)。对器件的效率、亮度等对比发现,当x=5nm时,器件的性能最佳,最大亮度为9 471cd/cm2,效率为23.5cd/A,色坐标(0.32,0.35)。实验表明,影响器件色稳定性和效率低的原因是电子和空穴迁移随驱动电压变化响应不一致引发激子复合区域的移动。     

基于MEH—PPV／PVK混合发光层的白光PLED发光机理探讨

分别采用聚合物MEH-PPV、PVK、MEH-PPV和PVK混合溶液及MEH-PPV、PVK与OXD-7混合溶液作为发光层材料制成了4种相似结构的PLED显示器件,并对上述器件进行了光谱测试.对其光谱分析发现,MEH-PPV的光谱主要集中在红、黄领域,短波区光谱强度弱,可以忽略不计;PVK的光谱范围较宽,短波区域光谱强度相对较高,但与长波区光谱强度相比则较低;MEH-PPV:PVK混合发光材料不仅出现了MEH-PPV和PVK所有光谱的光线,而且实验发现波长在500～540 nm的光线亮度随着波长的增加亮度增强,即出现了所谓的反常区,对此作者提出两种模型对该反常区进行了详细解释;加入电子传输材料OXD-7后,PLED器件短波长部分的光线强度增加,这主要是由于OXD-7能够有效增加电子的传输效率,进而有效提高激子的能量.     

不同AlQ厚度黄光OLEDs的研究

制备了一种新型的黄光器件,其结构为：ITO/2T-NATA（15 nm）/NPB（50 nm）/ADN（20 nm）：2%DCJTB：2%TBPe/Al Q（x）/LiF（5 nm）/Al（100 nm）（x=10 nm,15 nm,20nm,25 nm,30 nm）,通过对不同Al Q厚度的黄光器件的性能如发光光谱、效率、亮度-电压曲线进行比较发现Al Q厚度为20 nm时,发光强度、效率和亮度都是最好的,而发光颜色几乎不发生改变.     

X射线衍射分析热处理温度对透明导电膜结构与导电性能的影响

采用溶胶一凝胶法以铟、锡氯化物为前驱物制备不同热处理温度下的ITO膜，对制备的ITO膜样品进行X射线衍射分析。研究表明热处理温度对ITO膜的衍射峰相对强度、晶粒尺寸和晶格常数有较大的影响，随着热处理温度的增加，ITO膜随机取向增加，晶粒增大，晶格常数在400℃时畸变最小。热处理温度为450℃时ITO膜的择优取向较弱，晶粒较大，晶格畸变较小，ITO膜的方阻最小。     

Electroluminescence enhancement in blue phosphorescent organic light-emitting diodes based on different hosts

Blue phosphorescent organic light-emitting diodes(OLEDs) are fabricated by utilizing the hole transport-type host material of 1,3-bis(carbazol-9-yl)benzene(MCP) combined with the electron transport-type host material of 1,3-bis(triphenylsilyl)benzene(UGH3) with the ratios of 1:0,8:2 and 6:4,and doping with blue phosphorescent dopant of bis(4,6-difluorophenylpyridinato-N,C2)picolinatoiridium(FIrpic).The device with an optimum concentration proportion of MCP:UGH3 of 8:2 exhibits the maximum current efficiency of 19.18 cd/A at luminance of 35.71 cd/m2 with maintaining Commission Internationale de L’Eclairage(CIE) coordinates of(0.1481,0.2695),which is enhanced by 35.7% compared with that of 1:0 with(0.1498,0.2738).The improvements are attributed to the effective carrier injection and transport in emitting layer(EML) because of mixed host materials.In addition,electron and exciton are confined in the EML,and 4,4’,4’’-Tris(carbazol-9-yl)-triphenylamine(TCTA) and Di-[4-(N,N-ditolyl-amino)-phenyl]cyclohexane(TAPC) have the high lowest unoccupied molecular orbital(LUMO) energy level and triplet exiton energy.     

TFT-LCD切割裂片工艺参数探讨

研究了TFT-LCD切割裂片的原理,以及刀轮角度、切割压力、下压量等工艺参数对切割质量的影响。采用120°和130°两种不同角度的刀轮在切割速度300mm/s、刀轮下压量0.14mm的条件下进行切割,发现120°刀轮的切割深度比130°刀轮的要大5~10μm;当切割压力一定时,切割深度随下压量的增加而增加。在同样条件下,120°刀轮在切割压力为0.18MPa时出现横向微裂纹,130°刀轮在0.28MPa的切割压力下出现横向裂纹;可见刀轮角度越小,越容易出现横向裂纹。实验结果表明,压力是影响横向微裂纹产生的主要因素,而刀轮下压量对横向裂纹的产生没有太大影响。     

Enhancement of electron injection in inverted bottom-emitting organic light-emitting diodes using Al/LiF compound thin film

The inverted bottom-emitting organic light-emitting devices (IBOLEDs) were prepared, with the structure of ITO/Al (x nm)/LiF (1 nm)/Bphen (40 nm)/CBP: GIr1 (14%):R-4b (2%) (10 nm)/BCP (3 nm)/CBP:GIr1 (14%):R-4b (2%) (20 nm)/TCTA (10 nm)/NPB (40 nm)/MoO3 (40 nm)/Al (100 nm), where the thickness of electron injection layer Al (x) are 0 nm, 2 nm, 3 nm, 4 nm and 5 nm, respectively. In this paper, the electron injection condition and luminance properties of inverted devices were investigated by changing the thickness of Al layer in Al/LiF compound thin film. It turns out that the introduction of Al layer can improve electron injection of the devices dramatically. Furthermore, the device exerts lower driving voltage and higher current efficiency when the thickness of electron injection Al layer is 3 nm. For example, the current efficiency of the device with 3-nm-thick Al layer reaches 19.75 cd·A^-1 when driving voltage is 7 V, which is 1.24, 1.17 and 17.03 times larger than those of the devices with 2 nm, 4 nm and 5 nm Al layer, respectively. The device property reaches up to the level of corresponding conventional device. In addition, all inverted devices with electron injection Al layer show superior stability of color coordinate due to the adoption of co-evaporation emitting layer and BCP spacer-layer, and the color coordinate of the inverted device with 3-nm-thick Al layer only changes from (0.580 6, 0.405 6) to (0.532 8, 0.436 3) when driving voltage increases from 6 V to 10 V.