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采用等离子体增强化学气相沉积(PECVD)低温处理和高温快速退火的技术,研究了退火条件对SiO2/4H-SiC界面态密度的影响.在n型4H-SiC外延片上高温干氧氧化50 nm厚的SiO2层并经N2原位退火,随后在PECVD炉中对样品进行350℃退火气氛为PH3,N2O,H2和N2的后退火处理,之后进行高温快速退火,最后制备Al电极4H-SiC MOS电容.I-V和C-V测试结果表明,各样品的氧化层击穿场强均大于9 MV/cm,PH3处理可以降低界面有效负电荷和近界面氧化层陷阱电荷,但PH3处理样品的界面态密度比N2O处理的结果要高.经N2O氛围PECVD后退火样品在距离导带0.2和0.4 eV处的界面态密度分别约为1.7× 1012和4×1011eV-1·cm-2,有望用于SiC MOSFET器件的栅氧处理. 相似文献
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We report on the characterization of a room temperature terahertz detector based on a GaN/AlGaN high electron mobility transistor integrated with three patch antennas.Experimental results prove that both horizontal and perpendicular electric fields are induced in the electron channel.A photocurrent is generated when the electron channel is strongly modulated by the gate voltage.Despite the large channel length and gate-source/drain distance, significant horizontal and perpendicular fields are achieved.The device is well described by the self-mixing of terahertz fields in the electron channel.The noise-equivalent power and responsivity are estimated to be 100 nW/(Hz)1/2 and 3 mA/ W at 292 K,respectively.No decrease in responsivity is observed up to a modulation frequency of 5 kHz. The detector performance can be further improved by engineering the source-gate-drain geometry to enhance the nonlinearity. 相似文献
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粉彩瓷是景德镇四大传统名瓷之一,粉彩又叫软彩。是在古彩装饰基础上发展而来的又一传统陶瓷装饰形式。它形成于明末清初,有"始于康熙,精于雍正, 相似文献
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提出了一种并联体声波谐振器(BAWR)与Ga_(2)O_(3)基MSM紫外传感器的新型高灵敏度传感器结构,即体声波谐振式日盲紫外光传感器(BAWR-UV Sensor)。设计并制备了MSM Ga_(2)O_(3)紫外传感器和BAWR传感器,将实测的光、暗S参数在仿真软件中封装为S1P数据模型代替MSM等效电路,用MBVD模型代替BAWR等效电路,通过并联两种结构建立了BAWR-UV仿真模型;采用ADS软件仿真了BAWR核心参数对BAWR-UV传感器灵敏度的影响,研究了提高灵敏度的设计方案。仿真结果表明,在0.5~4.5 GHz频率范围内,BAWR-UV的并联Q值越大,阻抗灵敏度越高,同时阻抗灵敏度随频率降低而增大,在并联谐振频率f_(p)=0.533 GHz时获得最佳阻抗灵敏度为100 kΩ/(μW/mm^(2));频率灵敏度随频率的升高而增大,在f_(p)=4.5 GHz时获得最佳频率灵敏度为1.4 MHz/(μW/mm^(2))。最后,开展了高灵敏度日盲紫外传感器的探索。 相似文献
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重点介绍了采用表面等离子体增强效应的近场光刻制作亚微米结构的二维点阵图形的技术。在研究亚波长纳米孔阵列超透射现象基本原理的基础上,应用有限差分时域(FDTD)算法数值模拟了周期性孔阵列的电场强度分布,讨论了纳米孔阵列所激发的表面等离子体激元提高近场光刻分辨率的微观机制。以金膜上的亚波长纳米孔阵列作为掩模版进行了接触式曝光实验,实际制作出了光刻胶的亚波长二维点阵图形,点阵图形的直径约为300nm,周期约为700nm。这种新型的微纳加工技术具有应用简单、成本低等特点,在大规模二维纳米点阵的制作方面有一定的应用潜力。 相似文献
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本文主要论述一种带平板天线,基于GaN/AlGaN高电子迁移率场效应晶体管的室温太赫兹探测器。太赫兹辐射下,由于天线的作用会在栅下感应出平行沟道和垂直沟道的太赫兹电场,由此在源漏产生强烈依赖于栅压的直流光电流。尽管栅极远离源漏两端,平行沟道和垂直沟道的太赫兹电场依然很强。探测器可以用自混频理论很好的描述。在室温下,探测器的响应度和噪声等效功率分别为100 nW/sqrt(Hz)和 3 mA/W。探测器具有很高的响应速度,在5 KHz的调制下,光电流没有衰减。如果缩少栅极和源漏的距离将进一步提高探测灵敏度。 相似文献
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An ultraviolet-infrared dual-color detector is proposed and realized based on the vertical integration of single-layer graphene and a 4H-SiC layer by semiconductor micro-fabrication technology. The spectral response characteristics of the detector are analyzed. The ultraviolet response range is 208—356 nm with a responsivity larger than 0.4 mA/W and the infrared response range is 1.016—1.17 μm with a responsivity larger than 0.4 mA/W at room temperature and 5 V bias voltage. The peak responsivity of the graphene in the ultraviolet-C band at 232 nm is 0.73 mA/W and in the near infrared band at 1.148 μm is 0.64 mA/W. The peak responsivity of SiC layer in the ultraviolet-B band at 312 nm is 2.27 mA/W. Besides, the responsivity increases with the bias voltage. 相似文献
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