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本文详细讨论了离子束混合下,Ce/Si〈100〉双层膜体系界面反应的动力学过程以及硅化物的形成规律.样品经150KeV Ar离子注入,辐照温度从LNT到300℃,剂量从5×X10~(14)到8.1×10~(16)Ar/cm~2.界面反应形成的硅化物为CeSi_2,其结构为体心正交结构.硅化物是分层生长的,厚度与注入剂量的平方根成线性关系,这说明界面反应是扩散控制的.与近贵金属/硅体系和难熔金属/硅体系相比较可以看出,稀土金属Ce/Si体系的相变过程与难熔金属/硅体系的相似;而混合的动力学行为与近贵金属/硅体系的相似.本文还讨论了化学驱动力和辐射增强扩散对混合的贡献. 相似文献
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Combining the charged particle activation analysis (CPAA) and the (?)hanneling technique, partial concentrations of carbon on different crystal lattice locations of GaAs were calculated. The results show that at lower total concentration (≈0.3 ppm), carbon atoms occupy principally the octahedral and displaced octahedral interstitial positions, but at higher total concentration (≈2 ppm), the substitutional carbon plays a principal role. 相似文献
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ELASTIC RECOIL DETECTION ANALYSIS OF LIGHT ELEMENTS IN THIN FILMS USING 35 MeV~(35) Cl~(6+) BEAM 总被引:1,自引:0,他引:1
In this paper, an elastic recoil detection analysis method is described using 35 MeV ~(35)Cl as incident ions. This method can determine and profile simultaneously H, D, He, C and O or in the other case, H, C, N and O. The depth resolution for the elements heavier than He is better than 20 nm. It has been applied to study the Co/Si and TiN thin films, and the depth profiles of He implanted in monocrystal silicon. 相似文献
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