排序方式: 共有37条查询结果,搜索用时 15 毫秒
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制作了发射极面积为1μm×15μm×4指的InP DHBT器件,器件拓扑使用了共基极和共发射极两种结构,通过负载牵引测试系统对器件功率特性进行测试。在功率优化匹配条件下,所测得最大输出功率密度和相应的功率附加效率(PAE)在10GHz下为1.24W/mm和50%,在18GHz下的数据为0.82W/mm和26%。测试同时表明,共发射极结构相对稳定和易于匹配,共基极模式具有更大的输出功率潜力,但需要进一步解决难于匹配、容易振荡和寄生参量影响等问题。在功放电路设计中,可以根据不同需求选择合适的电路拓扑结构。 相似文献
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A virtual loop model was built by the transmission analysis with virtual ground method to assist the negative-resistance oscillator design, providing more perspectives on output power and phase-noise optimization. In this work, the virtual loop described the original circuit successfully and the optimizations were effective. A 10 GHz high-efficiency low phase-noise oscillator utilizing an InGaP/GaAs HBT was achieved. The 10.028 GHz oscillator delivered an output power of over 15 dBm with a phase-noise of lower than -107 dBc/Hz at 100 kHz offset. The efficiency of DC to RF transformation was 35 %. The results led to a good oscillator figure of merit of-188 dBc/Hz. The measurement results agreed well with those of the simulations. 相似文献
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报道了基于InP基双屏质结双板晶体管(DHBT)工艺的四指共射共基75 GHz微波单片集成(MMIC)功率放大器,器件的最高振荡频率fmax为150 GHz.放大器的输出极发射极面积为15μm×4μm.功率放大器在75 GHz时功率增益为12.3 dB,饱和输出功率为13.92 dBm.放大器在72.5 GHz处输入为2 dBm时达到最大输出功率14.53 dBm.整个芯片传输连接采用共面波导结构,芯片面积为1.06 mm×0.75 mm. 相似文献
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Ultra high-speed InP/InGaAs SHBTs with ft and fmax of 185 GHz 总被引:1,自引:1,他引:0
An InP/InGaAs single heterojunction bipolar transistor (SHBT) with high maximum oscillation frequency (fmax) and high cutoff frequency (ft) is reported. Efforts have been made to maximize fmax and ft simultaneously including optimizing the epitaxial structure, base–collector mesa over-etching and base surface preparation. The measured ft and fmax both reached 185 GHz with an emitter size of 1 × 20 μ m2, which is the highest fmax for SHBTs in mainland China. The device is suitable for ultra-high speed digital circuits and low power analog applications. 相似文献
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An InP/InGaAs single heterojunction bipolar transistor(SHBT) with high maximum oscillation frequency (f_(max)) and high cutoff frequency(f_t) is reported.Efforts have been made to maximize f_(max) and f_t simultaneously including optimizing the epitaxial structure,base-collector mesa over-etching and base surface preparation.The measured f_t and f_(max) both reached 185 GHz with an emitter size of 1×20μm~2,which is the highest f_(max) for SHBTs in mainland China.The device is suitable for ultra-high spee... 相似文献
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具有在片稳定网络的GaAs HBT微波功率管 总被引:1,自引:0,他引:1
采用GaAs标准MMIC工艺制作了具有片上RC并联稳定网络的InGaP/GaAs HBT微波功率管单胞.依据K稳定因子,RC网络使功率管在较宽的频带内具有绝对稳定特性.Load-pull测试表明RC网络没有严重影响功率管的大信号特性,在5.4GHz饱和输出功率为30dBm,在11GHz 1dB压缩点输出功率大于21.6dBm.功率合成电路验证了该功率管具有高稳定性,非常适合制作微波大功率HBT放大器. 相似文献
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研制了X波段的InGaP/GaAs HBT单级MMIC功率放大器,该电路采用自行开发的GaAs HBT自对准工艺技术制作.电路偏置于AB类,小信号S参数测试在8~8.5GHz范围内,线性增益为8~9dB,输入驻波比小于2,输出驻波比小于3,优化集电极偏置后,线性增益为9~10dB.在8.5GHz进行连续波功率测试,在优化的负载阻抗条件下,P1dB输出功率为29.4dBm,相应增益7.2dB,相应PAE〉40%,电路的饱和输出功率Psat为30dBm. 相似文献
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Static frequency dividers are widely used as a circuit performance benchmark or figure-of-merit indicator to gauge a particular device technology’s ability to implement high speed digital and integrated high performance mixed-signal circuits.We report a 2:1 static frequency divider in InGaAs/InP heterojunction bipolar transistor technology.This is the first InP based digital integrated circuit ever reported on the mainland of China. The divider is implemented in differential current mode logic(CML) with 30 transistors.The circuit operated at a peak clock frequency of 40 GHz and dissipated 650 mW from a single -5 V supply. 相似文献
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我们制造出了栅长为88 nm的InP基InAlAs/InGaAs 高电子迁移率器件(HEMTs),该器件的频率特性为ft = 100 GHz, fmax = 185 GHz。本文对横向栅槽宽度分别为300 nm, 412 nm, 1070 nm的器件进行了实验。借助能带图的方式,定性分析了横向栅宽的增加会因为表面态和碰撞电离的作用,使得器件直流特性表现出kink效应,并得到减小横向栅槽宽度能减弱kink效应的结论,文中还讨论了横向栅槽宽度通过改变器件寄生电容及其源漏电阻,从而对频率特性产生影响。这些分析对制造出更高性能的HEMT器件有比较重要的意义。 相似文献