Investigation of functional core-rim composite part production by inserted powder injection moulding

In this study, the use of Cu and Ni interlayers have been investigated for functional core-rim composite part production with WC-Co 9?wt-% feedstock/steel. For this purpose, different experiments have been performed and joining condition, shear strength and microstructure of the intermediate region have been examined. It has been found that AISI 4340 insert/WC-Co have been joined and 85.8?MPa shear strength achieved, but high speed steel insert has not joined. Moreover, it has been determined that better results are obtained with Ni interlayer. Under the same conditions, when the 40?µm Ni interlayer has been used between AISI 4340 core and WC-Co rim, shear strength has been increased approximately twice and has been 162.7?MPa.     

Kinetics and Mechanism of Low-Grade Manganese Ore Reduction by Natural Gas

Metallurgical and Materials Transactions B - The calcination and the reduction behaviors of a low-grade manganese ore by methane was studied at 973 K to 1273 K by several techniques. The onset...     

Thermodynamic and Kinetic Behavior of B and Na Through the Contact of B-Doped Silicon with Na2O-SiO2 Slags

Boron (B) is the most problematic impurity to be removed in the processes applied for the production of solar grade silicon. Boron removal from liquid silicon by sodium-silicate slags is experimentally studied and it is indicated that B can be rapidly removed within short reaction times. The B removal rate is higher at higher temperatures and higher Na₂O concentrations in the slag. Based on the experimental results and thermodynamic calculations, it is proposed that B removal from silicon phase takes place through its oxidation at the slag/Si interfacial area by Na₂O and that the oxidized B is further gasified from the slag through the formation of sodium metaborate (Na₂B₂O₄) at the slag/gas interfacial area. The overall rate of B removal is mainly controlled by these two chemical reactions. However, it is further proposed that the B removal rate from silicon depends on the mass transport of Na in the system. Sodium is transferred from slag to the molten silicon through the silicothermic reduction of Na₂O at the slag/Si interface and it simultaneously evaporates at the Si/gas interfacial area. This causes a Na concentration rise in silicon and its further decline after reaching a maximum. A major part of the Na loss from the slag is due to its carbothermic reduction and formation of Na gas.     

Thermodynamic activities in silicon binary melts

The thermodynamic activities in the silicon binary melts with Al, Ca, Mg, Fe, Ti, Zn, Cu, Ag, Au, Sn, Pb, Bi, Sb, Ga, In, Pt, Ni, Mn and Rh are studied. The silicon activities along the liquidus are calculated through a quasi-regular solution model using the recently determined liquidus constants for the silicon binary systems. The silicon activities at its melting point are calculated considering regular solution approximation. The activities of the other melt component at the silicon melting point are also calculated through the graphical integration of the Gibbs–Duhem equation for the activity coefficient, which are further utilized to determine the corresponding activities along the liquidus. The calculated activities are presented graphically, and it is indicated that the results are consistent with the reported activity data in the literature. The activities in the dilute solutions are also calculated graphically. Moreover, the activities of particular dilute solute elements in silicon are calculated through a simple formula, which is a function of the liquidus constants.     

Wetting Behavior and Reactivity of Molten Silicon with h-BN Substrate at Ultrahigh Temperatures up to 1750 °C

For a successful implementation of newly proposed silicon-based latent heat thermal energy storage systems, proper ceramic materials that could withstand a contact heating with molten silicon at temperatures much higher than its melting point need to be developed. In this regard, a non-wetting behavior and low reactivity are the main criteria determining the applicability of ceramic as a potential crucible material for long-term ultrahigh temperature contact with molten silicon. In this work, the wetting of hexagonal boron nitride (h-BN) by molten silicon was examined for the first time at temperatures up to 1750 °C. For this purpose, the sessile drop technique combined with contact heating procedure under static argon was used. The reactivity in Si/h-BN system under proposed conditions was evaluated by SEM/EDS examinations of the solidified couple. It was demonstrated that increase in temperature improves wetting, and consequently, non-wetting-to-wetting transition takes place at around 1650 °C. The contact angle of 90° ± 5° is maintained at temperatures up to 1750 °C. The results of structural characterization supported by a thermodynamic modeling indicate that the wetting behavior of the Si/h-BN couple during heating to and cooling from ultrahigh temperature of 1750 °C is mainly controlled by the substrate dissolution/reprecipitation mechanism.     

Vacuum Evaporation of Pure Metals

Theories on the evaporation of pure substances are reviewed and applied to study vacuum evaporation of pure metals. It is shown that there is good agreement between different theories for weak evaporation, whereas there are differences under intensive evaporation conditions. For weak evaporation, the evaporation coefficient in Hertz-Knudsen equation is 1.66. Vapor velocity as a function of the pressure is calculated applying several theories. If a condensing surface is less than one collision length from the evaporating surface, the Hertz-Knudsen equation applies. For a case where the condensing surface is not close to the evaporating surface, a pressure criterion for intensive evaporation is introduced, called the effective vacuum pressure, p _eff. It is a fraction of the vapor pressure of the pure metal. The vacuum evaporation rate should not be affected by pressure changes below p _eff, so that in lower pressures below p _eff, the evaporation flux is constant and equal to a fraction of the maximum evaporation flux given by Hertz-Knudsen equation as 0.844 $ \dot{n}_{\hbox{Max} } $ . Experimental data on the evaporation of liquid and solid metals are included.     

Study the Output Characteristics of a 90 kJ Filippove-Type Plasma Focus

The output characteristics of a Filippove-Type plasma focus “Dena” (288 μF, 25 kV, 90 kJ) is numerically investigated by considering the voltage, current, current derivative, and maximum current as a function of capacitor bank energy in the constant Argon gas pressure and compared to the experiment. It is shown that increase on the bank energy leads to the increment on the maximum current and decrement on the pinch time.     

Theoretical Analysis of Novel Multi-Order LC Oscillators

A conventional differential pair LC oscillator is capable of generating only a single fundamental oscillation frequency. This brief presents the theoretical study of a novel oscillator that incorporates higher order LC filters to produce multiple oscillation frequencies that may be several octaves apart. These multiple oscillation frequencies are obtained from a single oscillator, thereby reducing the area of the circuit when being used for multistandard wireless applications. Moreover, a multi-order oscillator does not suffer from large parasitic capacitances from switches, which is a common drawback in switched-inductor tuned oscillators. A detailed analysis is carried out, and useful design insights are provided     

CMOS Distributed Active Power Combiners and Splitters for Multi-Antenna UWB Beamforming Transceivers

This paper presents the design of the first CMOS distributed active power combiners and splitters with wideband variable delay and gain. These circuits are the key components for use in multi-antenna (MA) ultra-wideband (UWB) point-to-point beamforming communication systems with multiple transmit and receive antennas. Two broadband circuit topologies for each active power combiner and splitter are proposed, one of which being fabricated in a 0.13-mum CMOS process. The proposed fabricated distributed active power combiner and splitter operate across wide range of frequencies that cover the UWB frequency range from 3.1 to 10.6 GHz. The gain of each RF path of the power combiner and splitter is independently controllable from -15 to 6 dB and from -16 to 9.5 dB, respectively. The wideband variable delay of each RF path varies from 32 to 42 ps for the two-stage power combiner, and from 43 to 53 ps for the three-stage power splitter across the UWB frequency range. Supplied from 1.8-V DC voltage, the power combiner and splitter consume 8.5 mA and 11.4 mA, respectively.     

Characteristics of Calcium-Aluminate Slags and Pig Iron Produced from Smelting-Reduction of Low-Grade Bauxites

Metallurgical and Materials Transactions B - Low-grade bauxite ores are not favorable in the conventional Bayer process for alumina production, as they are producing more bauxite residue (red mud)...