半绝缘GaAs光电导开关亚皮秒传输特性的研究

 本文应用Ensemble-Monte Carlo方法模拟了半绝缘GaAs(SI-GaAs)光电导开关基于Auston等效电路亚皮秒传输特性.从载流子在开关体内的动态特性出发,研究了光电导开关在飞秒激光脉冲触发下光电导传输特性、电介质弛豫特性、开关储能特性以及开关工作模式;分析了非线性光电导开关对光能阈值和偏置电场阈值要求的物理机制.     

半绝缘GaAs光电导开关的光控预击穿特性

用波长1064nm,触发光能为0.5mJ的激光脉冲触发电极间隙为4mm的半绝缘（SI）GaAs光电导开关,当偏置电压达到4kV时,开关并未引发自持放电,而是进入非线性（lock-on）工作模式,即开关处于光控预击穿状态。分析认为：通过激子的产生和离解激子效应贡献了光电导;碰撞电离、雪崩倍增、激子效应补充了因外界光源撤出后所需的载流子浓度和能量。在上述因素的相互作用下,SI-GaAs 光电导开关并没有引发自持放电而是处于光控预击穿状态,丝状电流特性影响着开关的损伤程度。     

基于GaAs光电导开关的超宽带微波源

报道了用飞秒激光脉冲触发GaAs光电导开关产生超短电磁脉冲辐射超宽带电磁波的实验结果,分析了超短电脉冲串经宽带天线的辐射特性.在接收端获得了上升时间200ps、脉冲宽度500ps、重复频率82MHz的超短电脉冲串和经宽带天线辐射的超宽带电磁波波形,其电磁波频谱覆盖4.7MHz～14GHz.     

Light controlled prebreakdown characteristics of a semi-insulating GaAs photoconductive switch

A 4 mm gap semi-insulating(SI) GaAs photoconductive switch(PCSS) was triggered by a pulse laser with a wavelength of 1064 nm and a pulse energy of 0.5 mJ.In the experiment,when the bias field was 4 kV, the switch did not induce self-maintained discharge but worked in nonlinear(lock-on) mode.The phenomenon is analyzed as follows:an exciton effect contributes to photoconduction in the generation and dissociation of excitons. Collision ionization,avalanche multiplication and the exciton effect can supply carrier concentration and energy when an outside light source was removed.Under the combined influence of these factors,the SI-GaAs PCSS develops into self-maintained discharge rather than just in the light-controlled prebreakdown status.The characteristics of the filament affect the degree of damage to the switch.     

半绝缘砷化镓光电导开关表面闪络电场的实验研究(英文)

With its unique features, photoconductive semiconductor switch (PCSS) is generally recognized today as a promising power electronic device. However, a major limitation of PCSS is its surprisingly low voltage threshold of surface flashover (SF). In this paper, an experimental study of surface flashover of a back-triggered PCSS is presented. The PCSSs with electrode gap of 18 mm are fabricated from liquid encapsulated czochralski (LEC) semi-insulating gallium arsenide (SI-GaAs), and they are either un-coated, or partly coated, or en- tirely coated PCSSs with high-strength transparent insulation. The SF fields of the PCSSs are measured and discussed. According to the experimental results, the high-dielectric-strength coating is efficient in both reducing the gas desorption from semiconductor and increasing the SF field: a well-designed PCSS can resist a voltage up to 20 kV under the repetition frequency of 30 Hz. The physical mechanism of the PCSS SF is analyzed, and the conclusion is made that having a channel structure, the SF is the breakdown of the contaminated dielectric layer at the semiconductor-ambient dielectric interface. The non-uniform distribution of the surface field and the gas desorption due to thermal effects of semiconductor surface currents are key factors causing the SF field reduction.     

沿面闪络和丝状电流对光电导开关的损伤机理

通过对电极间隙为3mm和8mm半绝缘GaAs光电导开关损伤实验研究发现,引起开关损伤的主要机制是沿面闪络和丝状电流。沿面闪络是在高偏置电压条件下GaAs材料在热传导过程中表现的熔化?再结晶现象,对开关造成了致命性损伤;而丝状电流是开关在非线性工作模式下由于存在负微分电导效应(NDC),形成的高浓度电子?空穴等离子体通道,芯片内产热和冷却之间达到了动态平衡,开关处于光控预击穿状态,存在可恢复性和不可恢复性两类损伤。     

用光电导开关产生超宽带电磁辐射的研究

用全固态绝缘结构的横向型半绝缘GaAs光电导开关,在高重复频率飞秒激光脉冲触发下产生超快电脉冲串,经过微带同轴过渡连接至宽带微波天线进行了超宽带电磁辐射和接收的实验,测试了辐射波形及频谱分布,得到了上升时间为200ps、脉宽500ps、重复频率82MHz、辐射频带宽度达6.0GHz以上的电磁波,分析了用光电导开关进行宽带辐射的机理和特性.