High sp~3 content hydrogen-free amorphous diamond: an excellent electron field emission material

Details are given of a study of the characteristics of field-induced electron emission from hydrogen-free high sp~3 content (>90 % ) amorphous diamond (a-D) film deposited on heavily doped (p<0.01 Ω·cm) n-type monoerystalline Si (111 ) substrate. It is demonstrated that a-D film has excellent electron field emission properties. The emission current can reach 0.9 μA at applied field as low as 1 V/μm, and the emission current density can be ahout several mA/cm~2 under 20 V/μm. The emission current is stable when the beginning current is at 50 μA within 72 h. Uniform fluorescence display of electron emission from the whole face of the a-D film under the electric field of 10-12 V/μm is also observed. The contribution of excellent electron emission property results from the smooth, uniform, amorphous surface and high sp~3 content of the a-D film.     

SiC陶瓷的冲蚀磨损耐磨性

研究了无压（ＰＬ），热压（ＨＰ）、热等静压（ＨＩＰ）烧结ＳｉＣ陶瓷的室温冲蚀磨损行为。热等静压ＳｉＣ陶瓷具有良好的综合力学性能和细致的组织结构，其冲蚀磨损耐磨性比无压的热压烧结ＳｉＣ陶瓷要好。     

一种新型陶瓷材料及其耐磨性

对新型Ａｌ２Ｏ３－ＴｉＣ－Ｃｏ陶瓷的磨粒磨损，冲蚀磨损及其在单颗粒作用下的摩擦磨损行为进行了研究。与ＡＴ３０（７０ｗｔ％Ａｌ２Ｏ３－３０ｗｔ％ＴｉＣ）陶瓷相比，Ａｌ２Ｏ３－ＴｉＣ－Ｃｏ陶瓷具有更为良好的耐磨性，金属钴的存在提高了基体的韧性，细化了晶粒，其综合力学性能得到了显著提高，ＡＴＣ陶瓷样品耐磨性与其强韧化水平和细致的组织结构有关。     

单片Si-FED的结构和设计

根据场发射显示器（ＦＥＤ）的工作原理和所要求的电学参数,利用常规的硅半导体工艺和微机械加工技术,设计和试制了显示面积为１０．８ｍｍ×１０．８ｍｍ的研究性器件。版图设计中采用了离子注入法形成导电网络结构和横向负反馈电阻。工艺流程采用了全干法两步刻蚀和热氧化增尖形成理想硅微尖锥的方案。硅场发射冷阴极阵列（Ｓｉ－ＦＥＣＡ）是ＦＥＤ的核心。     

Al2O3—TiC—Co改性陶瓷的性能及其耐磨性

以化学沉积的方法,在陶瓷体Ａｌ２Ｏ３,ＴｉＣ的表面均匀包覆一层Ｃｏ膜。混合球磨后经热压烧结的Ａｌ２Ｏ３－Ｔｉｃ－Ｃｏ（ＡＴＣ）改性陶瓷的强度和断裂韧性比Ａｌ２Ｏ３－ＴｉＣ提高约４０％。并对Ａｌ２Ｏ－ＴｉＣ－Ｃｏ和Ａｌ２Ｏ３－ＴｉＣ陶瓷的磨粒磨损行为、磨损机理和磨粒磨损耐磨性进行了比较。结果表明,Ａｌ２Ｏ３－ＴｉＣ－Ｃｏ陶瓷的耐磨性明显好于Ａｌ２Ｏ３－ＴｉＣ陶瓷,磨损表面呈现较多的塑性变形。     

一种新型陶瓷的冲蚀磨损耐磨性

对ＴｉＣ及Ａｌ２Ｏ３粉末进行表面改性，在其表面均匀包覆一层钴膜，然后再用热等静压制备出硬度和韧性较较理想的Ａｌ２Ｏ３－ＴｉＣ－Ｃｏ新型金属陶瓷，该材料的断裂韧性比未改性的ＡＴ３０材料有较大的提高，硬度两者相当，并对ＡＴ３０和ＡＴＣ材料的冲蚀行为及冲蚀机制进行了比较研究，研究表明，无论在高角还是在底角冲蚀条件下，其抗冲蚀性能优于Ａｌ２Ｏ３－ＴｉＣ陶瓷，尤其是在高角冲蚀条件下。     

非晶金刚石膜的电子场发射性能研究

研究了用真空磁过滤弧沉积（ＦＡＤ）方法制备的非晶金刚石薄膜（ａＤＦ）的电子场发射性能，其最小阈值电压为２．１Ｖ。ｓｐ３键含量不同的ａＤＦ发射性能也不同，适当的ｓｐ２键含量能降低阈值电压，提高ｓｐ３键含量能提高发射稳定性。根据实验结果提出了一种发射机制。     

热等静压Al2O3／SiC和SiCw／SiC陶瓷磨粒磨损行为的比较研究

通过ＳＥＭ观察和ＥＤＸＡ分析对Ａｌ２Ｏ３／ＳｉＣ和ＳｉＣｗ／ＳｉＣ陶瓷的耐磨粒磨损性进行了比较研究。在低应力下，Ａｌ２Ｏ３／ＳｉＣ陶瓷的耐磨性优于ＳｉＣｗ／ＳｉＣ陶瓷，而在较高应力下则相反。     

Al2O3—TiC—Co与Al2O3—TiC陶瓷冲蚀磨损行为的比较研究

通过特殊的化学处理方法，完成了对Ａｌ２Ｏ３及ＴｉＣ陶瓷粉末的钴包覆，将包覆后的两种粉安７０ｗｔ％Ａｌ２Ｏ３－Ｃｏ和３０ｗｔ％ＴｉＣ－Ｃｏ的比例混合烧结出硬度和韧性都较理想的Ａｌ２Ｏ３－ＴｉＣ－Ｃｏ（ＡＴＣ）精细陶瓷，通过ＳＥＭ观察研究其冲饥蚀磨损行为，并对ＡＴ３０（７０ｗｔ％Ａｌ２Ｏ３－３０ｗｔ％ＴｉＣ）和ＡＴＣ陶瓷的冲蚀行为机制进行了比较研究，与ＡＴ３０陶瓷相比，ＡＴＣ陶瓷良好的综合力学性能和细     

Effect of interface layers on electron field emission properties of amorphous diamond films

Hydrogen-free high sp~3 content amorphous diamond (AD) films are deposited on three different substrates——Au-coated Si (Au/Si), Ti-coated Si (Ti/Si) and Si wafers. Electron field emission properties and fluorescent displays of the above AD films are studied by using a sample diode structure. The compositional profile of the interfaces of AD/Ti/Si and AD/Si is examined by using secondary ions mass spectroscopy (SIMS). Because of the reaction and interdiffusion between Ti and C, the formation of a thin TiC intermediate layer is possible between AD film and Ti/Si substrate. The field emission properties of AD/Ti/Si are sufficiently improved, especially its uniformity. A field emission density of 0.352 mA/cm~2 is obtained under an electric field of 19.7 V/μm. The value is much more than that of AD/Au/Si and AD/Si under the same electric field.