Editorial: the March 2022 cover paper

Journal of Materials Science -     

Ultra-compact with improved data rate optical encoder based on 2D linear photonic crystal ring resonator

Photonic Network Communications - In the present work, a high-speed optical encoder is proposed based on two-dimensional photonic crystal ring resonator using coupled mode theory and resonance...     

Buffer transference strategy for power control in B5G-ultra-dense wireless cellular networks

Wireless Networks - Beyond five generation (B5G) systems will demand strict and heterogeneous service requirements for the emerging applications. One solution to meet these demands is the dense...     

碳中和背景下配电网差异化节能降耗潜力评估分

为了提高配电网差异化节能降耗效果，解决现有潜力评估方法存在的应用性能差的问题，提出碳中和背景下配电网差异化节能降耗潜力优化评估方法。根据配电网的空间结构，构建相应的等值电路模型。在该模型下，从设备损耗和运行附加损耗2个方面计算配电网的损耗量。根据损耗量计算结果，确定配电网差异化碳中和节能降耗方式。从静态和动态2个角度设置潜力评估指标，通过指标数据处理、指标权重求解等步骤，得出配电网差异化节能降耗潜力的综合量化评估结果。将设计潜力评估方法应用到配电网的差异化节能降耗改造工作中，能够有效降低配电网的实际线损量、降低区域损耗费用，并具有较高的应用价值。     

Effect of ‘Zn’ substitution on structural,morphological, magnetic and optical properties of Co–Zn ferrite nanoparticles for ferrofluid application

Journal of Materials Science: Materials in Electronics - The Co1?xZnxFe2O4 (Co–Zn) ferrite nanoparticles with x varying from 0.0 to 0.4 have been manufactured by facile chemical...     

Optical-luminescence properties of ZnO and TiO2 nanopowders obtained by pulsed laser reactive ablation

Journal of Materials Science: Materials in Electronics - The ZnO and TiO2 nanopowders have been prepared by means of the pulsed laser reactive ablation of metallic (Zn, Ti) targets. The Structural,...     

Resistive organic memory devices based on nitrogen-doped CNTs/PSS composites

Journal of Materials Science: Materials in Electronics - Non-volatile organic memory devices were fabricated using polystyrene sulfonate (PSS)?+?nitrogen-doped multi-walled carbon...     

Structure and bandgap determination of InN grown by RP-MOCVD

InN thin films are grown on sapphire substrates by remote plasma-assisted metal organic chemical vapor deposition while varying the indium pulse length and substrate temperature. The effects of the indium pulse length and temperature on the structural, morphological, electronic, and optical properties of the thin films are studied. The structural parameters are determined by X-ray diffraction and X-ray photoelectron spectroscopy and the effects of incorporating oxygen atoms in the structure is described. The N K-edge X-ray absorption spectroscopy (XAS) and X-ray emission spectroscopy (XES) measurements are used to determine the band gap and it is found to be 1.80?±?0.25 eV for all samples. A complementary measurement namely, X-ray excited optical luminescence measurement is performed to confirm the band gap value obtained from XAS and XES measurements. O K-edge XAS measurements are performed to determine the presence of oxygen impurities in the samples. Meanwhile, we carry out the density functional theory calculations for Wurtzite InN, hypothetical Wurtzite-type InO_0.5N_0.5, and InO_0.0625N_0.9375 structures. We find that the measured N-edge spectra agree well with our Wurtzite InN calculations and the measured O K-edge spectra agree better with hypothetical Wurtzite-type InO_0.0625N_0.9375 than Wurtzite-type InO_0.5N_0.5.