Development of core mode blocker with H/sub 2/-loaded Ge-B codoped fibres

A novel fabrication method of the core mode blocker by exposing H/sub 2/-loaded Ge-B codoped fibres to local electric arc discharge for application to the LPFGs-based tunable all-fibre bandpass filter with 6.5 nm bandwidth and 40 nm tuning range is presented.     

Numerical analysis of the warpage problem in TSOP

The reliability and the solderability of thin small outline package (TSOP) are significantly affected by the warpage that is generated after epoxy molding compound (EMC) molding process. This warpage problem mainly results from the mismatch of material properties such as Young's modulus, Poisson's ratio and coefficient of thermal expansion (CTE) and the geometric structure of each component for TSOP. The optimization of both material properties and geometric structures using the numerical analysis is necessary to reduce the warpage of TSOP. However, there are still some limitations for the numerical analysis to obtain proper results consistent with the practical warpage values. In this paper, the numerical analysis is performed under the assumption of elastic behavior for EMC. Furthermore, to solve the limitations, the material properties at the molding temperature and the degree of reaction rate at the end of the molding process of EMC are considered together for the analysis. This numerical analysis gives the higher warpage values than the measured ones, and is applicable to the practical design of the reliable electronic package.     

Parasitic Bipolar Junction Transistors in a Floating-Gate MOSFET for Fluorescence Detection

In this letter, we examined whether the parasitic bipolar junction transistors (BJTs) in the MOSFET fabricated by the standard CMOS process can play a role as a fluorescence detector. To suppress the action of two vertical parasitic BJTs, the gate and n-well were tied in the parasitic BJTs, and the body node was connected to the drain. The proposed device was compared with the inherent and the parasitic diodes in the MOSFET. It had 100 times higher photocurrents than the diodes in the MOSFET. In addition, it was applied for the detection of the fluorescent signal, and could detect near 10 nM of Alexa 546. Therefore, CMOS-process-compatible parasitic BJTs can be used as a photodetector in an integrated fluorescence detector.     

An Autophagy-Disrupting Small Molecule Promotes Cancer Cell Death via Caspase Activation

A novel autophagy inhibitor, autophazole (Atz), which promoted cancer cell death via caspase activation, is described. This compound was identified from cell-based high-content screening of an imidazole library. The results showed that Atz was internalized into lysosomes of cells where it induced lysosomal membrane permeabilization (LMP). This process generated nonfunctional autolysosomes, thereby inhibiting autophagy. In addition, Atz was found to promote LMP-mediated apoptosis. Specifically, LMP induced by Atz caused release of cathepsins from lysosomes into the cytosol. Cathepsins in the cytosol cleaved Bid to generate tBid, which subsequently activated Bax to induce mitochondrial outer membrane permeabilization (MOMP). This event led to cancer cell death via caspase activation. Overall, the findings suggest that Atz will serve as a new chemical probe in efforts aimed at gaining a better understanding of the autophagic process.     

Effect of Nitrogen Atmosphere on the Densification of a 3-mol%-Yttria-Doped Zirconia

The densification behavior of a 3-mol%-Y₂O₃-doped ZrO₂ (3Y-ZrO₂) has been investigated under N₂ and O₂ atmospheres. Powder compacts have been sintered at 1550° and 1400°C for various times. The density of the specimen sintered at 1550°C is higher in N₂ than in O₂, while the contrary result is obtained in the case of the specimen sintered at 1400°C. Such results can be explained in terms of nitrogen solubility and oxygen vacancy in a ZrO₂ matrix. Because nitrogen solubility into the ZrO₂ increases with an increase in heat-treatment temperature, leading to the formation of oxygen vacancy, the densification rate becomes higher. The present study thus shows evidence of nitrogen solubility into the ZrO₂ and its role on the densification behavior of 3Y-ZrO₂.     

Ultrastructural investigation of intact orbital implant surfaces using atomic force microscopy

This study examined the surface nanostructures of three orbital implants: nonporous poly(methyl methacrylate) (PMMA), porous aluminum oxide and porous polyethylene. The morphological characteristics of the orbital implants surfaces were observed by atomic force microscopy (AFM). The AFM topography, phase shift and deflection images of the intact implant samples were obtained. The surface of the nonporous PMMA implant showed severe scratches and debris. The surface of the aluminum oxide implant showed a porous structure with varying densities and sizes. The PMMA implant showed nodule nanostructures, 215.56 ± 52.34 nm in size, and the aluminum oxide implant showed crystal structures, 730.22 ± 341.02 nm in size. The nonporous PMMA implant showed the lowest roughness compared with other implant biomaterials, followed by the porous aluminum oxide implant. The porous polyethylene implant showed the highest roughness and severe surface irregularities. Overall, the surface roughness of orbital implants might be associated with the rate of complications and cell adhesion. SCANNING 33: 211–221, 2011. © 2011 Wiley Periodicals, Inc.     

Real-Time Global Illumination for VR Applications

Real-time global illumination in VR systems enhances scene realism by incorporating soft shadows, reflections of objects in the scene, and color bleeding. The Virtual Light Field (VLF) method enables real-time global illumination rendering in VR. The VLF has been integrated with the Extreme VR system for real-time GPU-based rendering in a Cave Automatic Virtual Environment.     

Control of the leakage current in SrTiO3 films by acceptor doping

Stoichiometric SrTiO3 (STO) films doped with Fe or Cr were prepared by r.f. magnetron sputtering technique. The effects of Fe or Cr doping in the SrTiO3 films were studied on the leakage current property which was discussed by defect chemistry. The experimental results can be explained by a model in which oxygen vacancies are the key defects responsible for the leakage current. Acceptor doping, with a small concentration of Fe or Cr, has led to a substantial improvement to 10–9 order in the leakage current density. Above the concentration of 0.010.02 mol% Fe2O3, Cr2O3, however, as the concentration increased, the leakage current increased. These acceptors in Ti4+ site are expected to electrically compensate for donor species such as oxygen vacancies, thereby reducing the concentration of mobile carriers that contribute to electrical conduction. Consequently, acceptor doped STO films have been shown to be superior to undoped films for applications requiring high leakage resistance, such as dynamic random access memory capacitors. © 1998 Chapman & Hall     

Two versions of architectures for dynamic implied addressing mode

The complexity of today’s embedded applications increases with various requirements such as execution time, code size or power consumption. To satisfy these requirements for performance, efficient instruction set design is one of the important issues because an instruction customized for specific applications can make better performance than multiple instructions in aspect of fast execution time, decrease of code size, and low power consumption. Limited encoding space, however, does not allow adding application specific and complex instructions freely to the instruction set architecture. To resolve this problem, conventional architectures increases free space for encoding by trimming excessive bits required beyond the fixed word length. This approach however shows severe weakness in terms of the complexity of compiler, code size and execution time. In this paper, we propose a new instruction encoding scheme based on the dynamic implied addressing mode (DIAM) to resolve limited encoding space and side-effect by trimming. We report our two versions of architectures to support our DIAM-based approach. In the first version, we use a special on-chip memory to store extra encoding information. In the second version, we replace the memory by a small on-chip buffer along with a special instruction. We also suggest a code generation algorithm to fully utilize DIAM. In our experiment, the architecture augmented with DIAM shows about 8% code size reduction and 18% speed up on average, as compared to the basic architecture without DIAM.