一种基于抽取LMS的距离旁瓣抑制方法

在噪声雷达中，传统相关处理方法的距离旁瓣受到时宽带宽积的限制，在有限相关处理时间内得到的距离旁瓣较高，会造成微弱目标被强目标、杂波旁瓣淹没的现象。提出一种基于抽取最小均方（Least Mean Square,LMS）滤波的噪声雷达旁瓣抑制方法，将LMS滤波器的系数作为距离压缩结果，从而获取较低的距离旁瓣。对该方法的性能进行了理论分析，并通过数字仿真验证了算法的有效性和理论分析的正确性。     

Editorial: the March 2022 cover paper

Journal of Materials Science -     

Ultra-compact with improved data rate optical encoder based on 2D linear photonic crystal ring resonator

Photonic Network Communications - In the present work, a high-speed optical encoder is proposed based on two-dimensional photonic crystal ring resonator using coupled mode theory and resonance...     

Buffer transference strategy for power control in B5G-ultra-dense wireless cellular networks

Wireless Networks - Beyond five generation (B5G) systems will demand strict and heterogeneous service requirements for the emerging applications. One solution to meet these demands is the dense...     

Effect of ‘Zn’ substitution on structural,morphological, magnetic and optical properties of Co–Zn ferrite nanoparticles for ferrofluid application

Journal of Materials Science: Materials in Electronics - The Co1?xZnxFe2O4 (Co–Zn) ferrite nanoparticles with x varying from 0.0 to 0.4 have been manufactured by facile chemical...     

Optical-luminescence properties of ZnO and TiO2 nanopowders obtained by pulsed laser reactive ablation

Journal of Materials Science: Materials in Electronics - The ZnO and TiO2 nanopowders have been prepared by means of the pulsed laser reactive ablation of metallic (Zn, Ti) targets. The Structural,...     

Resistive organic memory devices based on nitrogen-doped CNTs/PSS composites

Journal of Materials Science: Materials in Electronics - Non-volatile organic memory devices were fabricated using polystyrene sulfonate (PSS)?+?nitrogen-doped multi-walled carbon...     

Structure and bandgap determination of InN grown by RP-MOCVD

InN thin films are grown on sapphire substrates by remote plasma-assisted metal organic chemical vapor deposition while varying the indium pulse length and substrate temperature. The effects of the indium pulse length and temperature on the structural, morphological, electronic, and optical properties of the thin films are studied. The structural parameters are determined by X-ray diffraction and X-ray photoelectron spectroscopy and the effects of incorporating oxygen atoms in the structure is described. The N K-edge X-ray absorption spectroscopy (XAS) and X-ray emission spectroscopy (XES) measurements are used to determine the band gap and it is found to be 1.80?±?0.25 eV for all samples. A complementary measurement namely, X-ray excited optical luminescence measurement is performed to confirm the band gap value obtained from XAS and XES measurements. O K-edge XAS measurements are performed to determine the presence of oxygen impurities in the samples. Meanwhile, we carry out the density functional theory calculations for Wurtzite InN, hypothetical Wurtzite-type InO_0.5N_0.5, and InO_0.0625N_0.9375 structures. We find that the measured N-edge spectra agree well with our Wurtzite InN calculations and the measured O K-edge spectra agree better with hypothetical Wurtzite-type InO_0.0625N_0.9375 than Wurtzite-type InO_0.5N_0.5.

     

Synergic effect of Sn-doped TiO2 nanostructures for enhanced visible light photocatalysis

Journal of Materials Science: Materials in Electronics - In the recent years, metal oxides have attracted more interest for researchers because of their applications in energy and...     

Intensity tunable optical limiting behaviour of an organic material 2-aminopyridinium succinate succinic acid single crystal

Journal of Materials Science: Materials in Electronics - A mixed solution of 2-aminopyridine and succinic acid, with a 1:1 molar ratio, was kept at room temperature to develop a 2-aminopridinium...