Mathematical Modeling of Drying Processes of Selected Fruits and Vegetables

This study investigates the behavior of fruit and vegetable samples during drying. The experimental data are fitted to several different thin-layer drying models. Regression analysis is used to determine model parameters, while statistical indicators serve to evaluate the goodness of fit. The power function model gives the best fit for all examined samples. Based on this model, different drying and heat storage technologies can be combined to ensure that the required residual moisture content of an agricultural product is reached. It is demonstrated on the case of a specific Togolese processing plant that under favorable conditions, fossil fuel consumption can be decreased by 33 %.     

Eu@C86 isomers: Calculated relative populations

Abstract

Relative populations of four energy-lowest IPR (isolated-pentagon-rule) isomers of Eu@C₈₆ are computed using the Gibbs energy based on characteristics from density functional theory calculations (M06-2X/3-21G?～?SDD entropy term, M06-2X/6-31G*～SDD or B2PLYP(D)/6-31G*～SDD energetics). The calculations confirm that the recently isolated Eu@C₁(7)-C₈₆ species is a major isomer in a relevant temperature region. Relationship to the empty C₈₆ cages is discussed, too.     

Intrinsic carrier multiplication in layered Bi2O2Se avalanche photodiodes with gain bandwidth product exceeding 1 GHz

Emerging layered semiconductors present multiple advantages for optoelectronic technologies including high carrier mobilities, strong light-matter interactions, and tunable optical absorption and emission. Here, metal-semiconductor-metal avalanche photodiodes (APDs) are fabricated from Bi₂O₂Se crystals, which consist of electrostatically bound [Bi₂O₂]²⁺ and [Se]²⁻ layers. The resulting APDs possess an intrinsic carrier multiplication factor up to 400 at 7 K with a responsivity gain exceeding 3,000 A/W and bandwidth of ~ 400 kHz at a visible wavelength of 515.6 nm, ultimately resulting in a gain bandwidth product exceeding 1 GHz. Due to exceptionally low dark currents, Bi₂O₂Se APDs also yield high detectivities up to 4.6 × 10¹⁴ Jones. A systematic analysis of the photocurrent temperature and bias dependence reveals that the carrier multiplication process in Bi₂O₂Se APDs is consistent with a reverse biased Schottky diode model with a barrier height of ~ 44 meV, in contrast to the charge trapping extrinsic gain mechanism that dominates most layered semiconductor phototransistors. In this manner, layered Bi₂O₂Se APDs provide a unique platform that can be exploited in a diverse range of high-performance photodetector applications.

     

Sensitivity analysis of steel plane frames with initial imperfections

The article presents the sensitivity and statistical analyses of the load-carrying capacity of a steel portal frame. It elaborates a typical stability problem of a system comprising two single-storey columns loaded in compression. The elements of this system mutually influence each other, and this fact, in conjunction with the random imperfections, influences the load-carrying capacity variance. This mutual interaction is analysed using the Sobol’ sensitivity analysis. The Sobol’ sensitivity analysis is applied to identify the dominant input random imperfections and their higher order interaction effects on the load-carrying capacity. Majority of imperfections were considered according to the results of experimental research. Realizations of initial imperfections were simulated applying the Latin Hypercube Sampling method. The geometrical nonlinear solution providing numerical result per run was employed. The frame was meshed using beam elements. The columns of the plane frame are considered with two variants of boundary conditions. The dependence between mean and design load-carrying capacities and column non-dimensional slenderness is analysed.     

Lithium Intercalation Compound Dramatically Influences the Electrochemical Properties of Exfoliated MoS2

MoS₂ and other transition metal dichalcogenides (TMDs) have recently gained a renewed interest due to the interesting electronic, catalytic, and mechanical properties which they possess when down‐sized to single or few layer sheets. Exfoliation of the bulk multilayer structure can be achieved by a preliminary chemical Li intercalation followed by the exfoliation due to the reaction of Li with water. Organolithium compounds are generally adopted for the Li intercalation with n‐butyllithium (n‐Bu‐Li) being the most common. Here, the use of three different organolithium compounds are investigated and compared, i.e., methyllithium (Me‐Li), n‐butyllithium (n‐Bu‐Li) and tert‐butyllithium (t‐Bu‐Li), used for the exfoliation of bulk MoS₂. Scanning transmission electron microscopy (STEM), Raman spectroscopy, X‐ray photoelectron spectroscopy (XPS), and cyclic voltammetry (CV) are adopted for a comprehensive characterization of all materials under investigation. In addition, catalytic properties towards the hydrogen evolution reaction (HER) and capacitive properties are also tested. Different organolithium compounds exhibit different extent of Li intercalation resulting in different degrees of exfoliation. The inherent electrochemical behavior of MoS₂ consisting of significant anodic and cathodic peaks as well as its capacitive behavior and catalytic properties towards hydrogen evolution reaction are strongly connected to the exfoliation compound used. This research significantly contributes to the development of large‐scale synthesis of electrocatalytic MoS₂‐based materials.     

Influence of different SiC surface treatments performed prior to Ni ohmic contacts formation

This work is dealing with the influence of surface treatment on ohmic contacts to hexagonal N-type SiC with medium doping level. The contact materials were Ni and Ni₂Si. The structures had to be annealed at high temperatures in order to reach ohmic behavior. A number of surface treatment methods were tested: wet cleaning, plasma etching, intentional oxidation with etching, H₂ annealing and their combinations. After some types of cleaning, the SiC surface was immediately analysed using the XPS method. The results of the analyses showed that the composition of the surface was not much influenced by these treatments. At lower annealing temperatures (approx. up to 850 °C) the prepared contacts showed Schottky behavior with large scatter of parameters. After annealing at approx. 960 °C, where the onset of ohmic behavior is expected, the structures were truly ohmic and of good parameters. Cleaning methods had just a negligible influence on the electrical parameters of the ohmic contacts. An explanation for these observed facts is suggested: Although - already on the basis of the XPS results - we could speak about a negligible influence of the cleaning onto the contact parameters, there might come across also other mechanisms coming from interaction of contact materials with SiC, which caused similar behavior of ohmic contacts on differently treated surfaces.     

Oxygen‐Free Highly Conductive Graphene Papers

Graphene papers have a potential to overcome the gap from nanoscale graphene to real macroscale applications of graphene. A unique process for preparation of highly conductive graphene thin paper by means of Ar⁺ ion irradiation of graphene oxide (GO) papers, with carbon/oxygen ratio reduced to 100:1, is presented. The composition of graphene paper in terms of carbon/oxygen ratio and in terms of types of individual oxygen‐containing groups is monitored throughout the process. Angle‐resolved high resolution X‐ray photoelectron spectroscopy helps to investigate the depth profile of carbon and oxygen within reduced GO paper. C/O ratios over 100 on the surface and 40 in bulk material are observed. In order to bring insight to the processes of oxygen removal from GO paper by low energy Ar⁺ ion bombardment, the gases released during the irradiation are analyzed by mass spectroscopy. It is proven that Ar⁺ ion beam can be applied as a technique for fabrication of highly reduced graphene papers with high conductivities. Such highly conductive graphene papers have great potential to be used in application for construction of microelectronic and sensor devices.