美国教授图学课程短期授课的实践及启示

常州大学过程装备与控制工程专业的工程制图与CAD课程聘请美国教授短期授课.详细分析外教的教学内容、教学组织、教材及授课特点等实践情况,提出此次尝试对我国工程图学教育的借鉴和思考.     

射线检测室的电气设计

结合具体的工程实例,分析了射线检测室电气设计的特点,介绍了其供配电系统、照明系统、防雷接地系统和弱电系统设计的依据、原则和方法,为各种射线检测装置系统的电气设计提供了参考.     

衬底对PECVD法生长氢化纳米硅薄膜的影响

用等离子体增强化学汽相沉积(PECVD)法,在玻璃和单晶Si衬底上分别制备了氢化纳米硅薄膜,对在相同工艺条件下的薄膜进行了对比研究,即用Raman散射谱研究了薄膜的晶粒平均大小和晶态比;用台阶仪测试了薄膜厚度;用X射线衍射谱和原子力显微镜对薄膜微结构和形貌进行了对比研究,发现所制备薄膜的微观结构有很大的差异。相同工艺条件下,在玻璃衬底上生长的薄膜,表面粗糙度小于单晶Si衬底上的薄膜,而晶化程度低于单晶Si衬底。掺杂使微结构发生了变化,掺P促进晶化,掺B促进非晶化,对此实验结果给出了定性的分析。     

质子钛酸盐热解TiO_2纳米棒的光电性能研究

采用水热法制备钛酸盐纳米棒,在300、500和700℃下煅烧得到了TiO2纳米棒。采用扫描电子显微镜、透射电子显微镜及X-射线衍射法对所得样品进行了结构表征。将所得TiO2纳米棒作为光阳极组装成染料敏化太阳电池。电流-电压曲线测试表明700℃烧结所得样品的光电性能最优。采用电化学阻抗谱(EIS)、强制光电流谱(IMPS)和强制光电压谱(IMVS)进一步研究TiO2膜电极的动力学过程。结果显示,700℃烧结所得样品制作的电池较其它温度的电池具有更低的电荷转移阻抗、更短的电子转移时间和更长的电子寿命,暗示了其优良的电子传输动力学性能以及更高的电荷收集效率。     

TA4微弧氧化陶瓷膜层的结构与性能研究

利用微弧氧化法在纯钛TA4表面制备以Ti O2为主体富含钙磷的多孔陶瓷膜层。采用扫描电镜、X射线能谱仪、X射线衍射仪、拉曼光谱仪、接触角测量仪及电化学工作站观测与分析陶瓷膜层的微观形貌、元素成分及相组成,探讨微弧氧化对其润湿性及耐蚀性能的影响。结果表明,TA4微弧氧化陶瓷膜层表面粗糙多孔,为锐钛矿相与金红石相Ti O2的混晶结构,金红石相的质量分数约为74.39%。TA4经微弧氧化改性后,表面粗糙度增加了1个数量级,接触角明显下降,表面能提高了87.05%,极性力分量增加了166.07%,体现出更好的润湿性能;自腐蚀电位正移0.53 V,腐蚀电流密度与腐蚀速率均减少了3个数量级,表现出更优的耐腐蚀性能。     

Surface Electromechanical Coupling on DLC Film with Conductive Atomic Force Microscope

Diamond-like carbon (DLC) film composed of microscopically insulation but microscopically a mixture of conducting (sp^2) and insulating (sp^3) phases was discussed on the local modification with a conductive atomic force microscope (C-AFM). Especially, a topographic change was observed when a direct current (DC) bias-voltage was applied to the DLC film. Experimental results show that a nanoscale pit on DLC surface was formed when applying a positive 25 V on DLC film. According to the interacting force between CoCr-coated microelectronic scanning probe (MESP) tip and DLC surface, as well as the Sondheimer oscillation theory, the “scalewing effect“ of the pit was explained. Electromechanical coupling on DLC film suggested that the depth of pits increased with an increase of load applied to surface when the cantilever-deflected signal was less than a certain threshold voltage.     

应用Casimir力实现真空"零点能"的利用研究

阐述了产生零点能及Casimir力的理论依据，对真空中的两平行平面等结构内的零点能及Casimir力进行了分析，并对一些影响因素进行了讨论，最后对应用Casimir力实现零点能利用的可行性进行了分析。     

利用真空零点能进行量子微型推进技术的研究

利用真空零点能作为驱动能源,可以有效解决卫星长期工作的能源问题。阐述了零点能及Casimir力的理论依据,对真空中的两平行平板结构、矩形腔等结构内由零点能引起的Casimir力进行分析,引出用Casimir力作为驱动力的微型推进系统理论模型。     

Microstructure and Mechanical Properties of Heat-treated GeSb_2Te_4 Thin Films

The effect of annealing on microstructure,adhesive and frictional properties of GeSb 2 Te 4 films were experimentally studied.The GeSb 2 Te 4 films were prepared by radio frequency(RF)magnetron sputtering,and annealed at 200℃and 340℃under vacuum circumstance,respectively.The adhesion and friction experiments were mainly conducted with a lateral force microscope(LFM)for the GeSb 2 Te 4 thin films before and after annealing.Their morphology and phase structure were analyzed by using atomic force microscopy(AFM)and X-ray Diffraction(XRD)techniques,and the nanoindention was employed to evaluate their hardness values.Moreover,an electric force microscope(EFM)was used to measure the surface potential. It is found that the deposited GeSb 2 Te 4 thin film undergoes an amorphous-to-fcc and fcc-to-hex structure transition;the adhesion has a weaker dependence on the surface roughness,but a certain correlation with the surface potential of GeSb 2 Te 4 thin films.And the friction behavior of GeSb 2 Te 4 thin films follows their adhesion behavior under a lower applied load.However,such a relation is replaced by the mechanical behavior when the load is relatively higher.Moreover,the GeSb 2 Te 4 thin film annealed at 340℃presents a lubricative property.