防熔融喷雾造粒干燥机及其工艺流程的创新

针对原离心喷雾干燥机存在的缺陷,在改进原离心喷雾干燥机工艺流程和干燥塔体结构的基础上,研发出了"防熔融喷雾造粒干燥机",其能有效防止物料熔融现象的发生,解决物料粘壁等问题。     

一种用于汽车电子导航的混合差值算法

介绍一种基于全球定位系统(GPS)和电子地图(GIS)的车辆路径诱导系统混合差值算法,实验结果显示,相比常用的Dijkstra's算法,混合差值算法在布线时间上减少60%。     

Effects of 5%Ni addition on thermal stability and crystallization behavior of Mg65Cu25Tb10 bulk metallic glass

The effects of 5%Ni addition on the glass forming ability, thermal stability and crystallization behavior of Mg65Cu25Tb10 bulk metallic glass were investigated using X-ray diffractometry, differential scanning calorimetry and transmission electron microscopy. The small amount of Ni addition reduces the glass forming ability and thermal stability due to a significant decrease in the crystallization activation energy. Analyses of crystallization kinetics give evidence to the existence of quenched-in nuclei in amorphous Mg65Cu20Ni5Th10. Final crystallization products are basically same for Mg65Cu25Tb10 and Mg65Cu25Ni5Tb10.     

ZnO纳米管的制备及光学特性研究

ZnO nanotubes have been fabricated through a carbon thermal reduction deposition process. Structure characterization results show that the ZnO nanotubes have a single crystalline wurtzite hexagonal structure pref- erentially oriented in the c-axis. The diameters of ZnO nanotubes are in the range of 90-280 nm and the wall thickness is about 50-100 nm. Room-temperature photoluminescence measurements of the ZnO nanotubes exhibit an intensive ultraviolet peak at 377 nm and a broad peak centered at about 517 nm. The UV emission is caused by the near band edge emission while the green emission may be attributed to both oxygen vacancy and the surface state. Raman and cathodoluminescence spectra are also discussed. Finally, a possible growth mechanism of the ZnO nanotubes is proposed.     

题目：电子泄露有关的氮化镓蓝光发射二极管低温发光效率行为

The typical light emission efficiency behaviors of InGaN/GaN multi-quantum well （MQW） blue light- emitting diodes （LEDs） grown on c-plane sapphire substrates are characterized by pulsed current operation mode in the temperature range 40 to 300 K. At temperatures lower than 80 K, the emission efficiency of the LEDs decreases approximately as an inverse square root relationship with drive current. We use an electron leakage model to explain such efficiency droop behavior; that is, the excess electron leakage into the p-side of the LEDs under high forward bias will significantly reduce the injection possibility of holes into the active layer, which in turn leads to a rapid reduction in the radiative recombination efficiency in the MQWs. Combining the electron leakage model and the quasi-neutrality principle in the p-type region, we can readily derive the inverse square root dependent function between the light emission efficiency and the drive current. It appears that the excess electron leakage into the p-type side of the LEDs is primarily responsible for the low-temperature efficiency droop behavior.     

基于Intel VT—x的XEN全虚拟化实现

由于X86体系结构对虚拟机支持的先天不足,基于此体系结构的虚拟机需要修改操作系统的源代码,称为泛虚拟化技术.泛虚拟化需要修改操作系统的源代码,故只能支持开源的操作系统,且这种虚拟机的实现也是比较困难的.为了解决这个问题,Intel公司提出了VT-x技术,该技术可以使虚拟机不需要修改操作系统的源代码,也就是所谓的全虚拟化技术,可以支持非开源的操作系统,且虚拟机的实现也比较简单.XEN是业界广泛看好的一款基于X86体系结构开源的虚拟机监视器,XEN 3.0开始实现了基于VT-x的全虚拟化技术,具有优越的性能和良好的体系结构.文中讨论了Intel的VT-x技术,并从CPU虚拟化、内存虚拟化和设备虚拟化三个方面介绍XEN实现全虚拟化的关键技术.     

应变PMOS二维阈值电压解析模型

利用准二维方法求解二维泊松方程,建立了锗硅源漏单轴应变PMOS阈值电压的二维解析模型,理论计算结果和实验报道的结果能很好吻合。研究了不同沟道长度和漏压情况下的沟道表面势,分析了沟道长度、漏压及锗硅源漏中锗摩尔组分等参数对阈值电压的影响。利用TCAD工具进行仿真模拟,结果表明,沟道长度和漏压是单轴应变PMOS阈值电压漂移的主要影响因素,而锗摩尔组分在一定成分范围内影响较小。     

一种改进的Sobel边缘检测算法的设计及其FPGA实现

为了快速得到边缘更清晰、敏感度更高的实时边缘图像数据,提出了一种改进的Sobel边缘检测算法.对原始图像的边缘进行平滑滤波后,利用2个3×3模板对选定的二维图像中同样大小区域内的数据进行卷积,合并水平及垂直方向的导数得到该区域的梯度值,再通过添加的梯度方向模块对该区域进行4个方向的判断以帮助确定边缘,最后通过非极大值抑制及二值化处理确定图像边缘.将改进后的Sobel边缘检测算法在FPGA上进行了实现并证明了其有效性.     

应变硅NMOS晶体管沟道应变的模拟研究

建立了一种基于硅/锗硅异质结构的应变硅NMOS晶体管的有限元模型,通过模拟研究了沟道区的应变分布及其与器件参数的关系。结果表明,提高锗硅虚拟衬底中锗的摩尔组分、减小应变硅层厚度,可以增加沟道应变。此外,应变量还随器件结构长度的增加而增加。研究结果可为应变硅器件的设计、工艺优化提供参考依据。