Control of reactive distillation production of high-purity isopropanol

The process characteristics and control strategy of a high-purity IPA reactive distillation column were investigated. A robust nominal operation was found by maintaining an excess of propylene feed to the column and recycling the unreacted propylene to the feed instead of the top stage. Stage temperature and propylene composition with one-to-one relationship with reboiler duty and propylene feed are selected as controlled variables for maintaining bottom purity and feed ratio in the presence of possible measurement bias respectively. High nonlinearity between selected input–output pair was reduced by using variable transformation. Dynamic simulations demonstrated that such a control scheme with nonlinear transformed variable was capable of providing much superior control performance than the one using natural variable.     

Parameter Uncertainty and Policy Intensity: Some Extensions and Suggestions for Further Work

The effects of parameter uncertainty on optimal policy have been a matter of interest for academics, and even for some policymakers, for a long time. Two lines of literature have developed analytical results on this matter. The first line uses static models and the second dynamic models. In this dynamic line most of the results are confined to models with a single state and a single control variable. In this paper we want to encourage the analysis of more general dynamic cases. To do so, the results in the dynamic line are extended from one-state and one-control finite horizon models to models with a pair of control variables. We then discuss some of the hurdles which must be surmounted for the results to be made more general and suggests some lines for further research. JEL classification: C61; E61     

X-ray or UV adjustment of MOS threshold voltage: Analytical and numerical modeling

A model is formulated that describes how radiation-induced charge accumulates in the gate oxide of a MOS structure and how it decays through tunneling and thermal emission. The model is used in a numerical analysis of the x-ray or UV adjustment of threshold voltage in MOS-circuit manufacture. The limits of this process technique are evaluated.