Computed tomographic evaluation of gas hole formation and structural quality in Gouda‐type cheese

Computed tomography (CT) was performed on Gouda‐type cheese during ripening to evaluate gas hole formation and structural quality. The cheese was exposed to different ripening conditions, including variations in ripening temperature and concentration of butyric acid bacteria. Computed tomography images were obtained every 2 weeks for 16 weeks to assess the volume, shape and location of gas holes. The results demonstrate that CT makes the nondestructive monitoring of cheese gas hole formation and evaluation of the structural features of cheese possible throughout the ripening period.     

基于LBP的人脸识别

本文首次提出应用局部二值模式(LBP)算法来预测人脸旋转姿态。首先建立平均人脸的特征直方图模型(正面人脸特征直方图、左转人脸特征直方图和右转人脸特征直方图),然后通过比较测试人脸特征直方图与平均人脸特征直方图的距离来预测人脸旋转类型。实验结果表明本文方法可以有效的预测人脸姿态。     

钢表面化学气相沉积TiC晶体的择优取向

本文用化学气相沉积(CVD)法,以TiCl_4-CH_4-H_2为原料气体,在不锈钢表面获得了致密的TiC膜.研究了TiC的成膜速度、表面形貌和晶体择优取向与沉积条什的关系.结果表明,沉积温度T_(dep),碳钛比CH_4/TiCl_4强烈地影响了TiC的成膜速度、表面形貌和晶体择优取向.CH_4/TiCl_4低时,TiC晶体的择优取向为(220):而CH_4/TiCl_4高时,TiC晶体的择优取向为(200).TiC晶体的择优取向主要取决于气氛中活性碳的平衡浓度。     

Effect of Ba Filling Fraction on Thermoelectric Properties of p-type Ba_yFe_(1.6)Co_(2.4)Sb_(12)

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Synthesis of β-Si3N4 by Chemical Vapor Deposition

Beta-type CVD-Si₃N₄ plates (up to 1.1 mm thick) have been prepared by adding TiCl₄ vapor to the system SiCl₄-NH₃-H₂ at deposition temperatures of 1350° to 1450°C, while α-type or amorphous CVD-Si₃N₄ was obtained without TiCl₄ vapor at the same deposition temperature. Three to four wt % 777V was included in the β-type CVD-Si₃N₄ matrix. The density, preferred orientation, and lattice parameters of β-type CVD-Si₃N₄ were examined.     

Oxidation of CVD Si3N4 at 1550° to 1650°C

A thermo gravimetric study of the oxidation behavior of chemically vapor-deposited amorphous and crystalline Si₃N₄ (CVD Si₃N₄) was made in dry oxygen (0.1 MPa) at 1550° to 1650°C. The specimens were prepared under various deposition conditions using a mixture of SiCl₄, NH₃, and H₂ gases. The crystalline CVD Si₃N₄ indicated a parabolic oxidation kinetics over the whole temperature range, whereas the amorphous CVD Si₃N₄ changed from a parabolic to a linear law with increased temperature. The oxidation mechanism is discussed in terms of the activation energy for the oxidation and the microstructure of the formed oxide films.     

Chaos and bifurcation in numerical computation by the Runge-Kutta method

In this paper the chaotic phenomenon and bifurcation in numerical computation using the Runge-Kutta method to discretize the nonlinear differential equation are investigated. It is shown that the bifurcation condition in the discretized equation is given by the eigenvalue of the jacobian matrix of the original differential equation. As an example, the bifurcation and chaos when a second-order nonlinear equation is discretized by the Runge-Kutta method is investigated and it is shown that the scenario from a stable fixed point to chaos when the fourth-order Runge-Kutta method is applied is quite different from those of the second-order Runge-Kutta method     

Chaos induced by the generalized Euler method

In this paper, bifurcation and the chaotic phenomenon in numerical computation are investigated using the generalized Euler method. In this method, the forward and backward Euler methods and the trapezoidal method can be represented as special cases. It will be made clear that, for some computation step size, the solution of the difference equation does not always approximate to the solution of the original differential equation; period-doubling bifurcations and the chaotic phenomenon occur in the solution of the difference equation. Two examples are shown to illustrate the effect of step size.     

PREFERRED ORIENTATION OF DEPOSITED TiC COATING ON STEEL BY CVD

Investigation was made of the deposited rate,surface morphology and crystal pre-ferred orientation of the dense TiC coating onto austenitic stainless steel in relationwith CH_4/TiCl_4 mole ratio and temperature adopted in CVD processing. When theCH_4/TiCl_4 ratio is low or high,the preferred orientation may be(220)or(200),respec-tively,which is mainly dependent on the equilibrium concentration of active C in vapourphase.     

High-Resolution Electron Microscopy of Chemically Vapor-Deposited β-Si3N4-TiN Composites

Microstructures of Si₃N₄-TiN composites prepared by chemical vapor deposition (CVD) were investigated by the multibeam imaging technique using a 1 MV electron microscope. High-resolution images showed a number of fibrous TIN crystallites dispersed in the matrix of CVD β-Si₃N₄. Crystallographic orientation relations between β-Si₃N₄ and TiN were determined directly from the observed images in the subcell scale. The fibrous axis of TiN is parallel to the (110) direction of the NaCl structure and lies along the c axis of the hexagonal β-Si₃N₄ crystal. Domain boundaries, planar faults, nonplanar faults, and dislocations were found in the CVD β-Si₃N₄ matrix near the TiN crystallites. The origin of the structure defects is briefly discussed in connection with the formation of TiN crystallites in the matrix.