An efficient manufacturing method for I-shaped cross-sectional CFRP beam with arbitrary arrangement of carbon fiber using electro-activated resin molding

Abstract

The I-shaped cross-sectional beam of CFRP (CFRP I-beam) is usually manufactured by the continuous protrusion method. Carbon fibers can only be arranged in the longitudinal direction. The CFRP I-beam with arbitrary arrangement of carbon fiber was manufactured with applying the electro-activated deposition molding method. The carbon fiber fabric was immersed in the deposition solution and energized, epoxy resin precipitated around carbon fiber and impregnated. The resin-impregnated fabric was installed to the mold, and the CFRP I-beam was fabricated. The CFRP I-beam was subjected to three-point bending tests, and the relationship between load-deflection was simulated by finite-element analysis.     

Design and evaluation of a mobile smart home interactive system with elderly users in Brazil

Personal and Ubiquitous Computing - This article presents a study concerning the evaluation of a smart home control system for elderly people with a sample of 10 users in a city in the interior of...     

Breakdown characteristics of oil and paper insulation for a very fast transient voltage

This paper describes the dielectric breakdown characteristics of oil and oil‐impregnated paper for very fast transient (VFT) voltages. Blumlein circuits generate VFT voltages of 60 and 300 ns in a pulse width that simulates disconnecting switching surges in gas‐insulated switch gears. We measured the breakdown voltages of needle‐to‐plane, plane‐to‐plane oil gaps and several pieces of paper between plane electrodes for VFT and lightning impulse voltages. The measured data were formulated in V‐t characteristics and Weibull probability distributions. The inclination n of V‐t characteristics of insulating paper is 150, which is less than n = 13.7 of the plane‐to‐plane oil gap in the VFT time range. The shape parameters of Weibull distribution obtained in this study show that the scattering of breakdown voltages of paper is much less than that of oil. © 2002 Wiley Periodicals, Inc. Electr Eng Jpn, 141(4): 16–24, 2002; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.10043     

Fast Full-Band Device Simulator for Wurtzite and Zincblende GaN MESFET Using a Cellular Monte Carlo Method

A fast full-band device simulator for wurtzite and zincblende GaN using a Cellular Monte Carlo (CMC) approach is reported for wurtzite and zincblende GaN. The full-phonon dispersion relationship including anisotropic polar-optical phonon scattering is taken into account for the wurtzite GaN calculation. In the bulk simulation, the CMC model is about 30–100 times faster than the conventional Ensemble Monte Carlo model at high electric field region. This CMC model is applied to the simulator of MESFET devices, and the calculation speed is significantly improved.     

Mutational analysis of amiloride sensitivity of the NhaA Na+/H+ antiporter from Vibrio parahaemolyticus

The activity of the NhaA Na+/H+ antiporter of Vibrio parahaemolyticus is inhibited by amiloride. We found an amino acid sequence in the NhaA that was identical to a putative amiloride binding domain of the Na+/H+ exchanger in mammalian cells. We constructed mutant NhaAs that had amino acid substitutions in the putative amiloride binding domain by site-directed mutagenesis. These include V62L (Val62 replaced by Leu), F63Y, F64Y, and L65F. Most mutant NhaAs showed decreased sensitivity for amiloride. Among these, the F64Y mutant NhaA showed the least amiloride sensitivity, with a Ki value 7 to 10 times greater than that in the wild type. Thus, the sequence between residues V62 and L65 in NhaA, especially F64, is very important for the inhibitory effect of amiloride on the antiporter.     

Molecular Dynamics Simulation of Structural Relaxation of Asphaltene Aggregates

For asphaltene obtained from vacuum residue of Khafji crude oil, the energy-minimum conformation calculated by molecular mechanics-dynamics simulations showed that aggregated structures of asphaltene molecules through noncovalent interactions are more stable. Changes induced in aggregated structures by pretreatment with solvents were investigated using molecular dynamics calculations. The simulation showed that in quinolin at 573 K, some staking interactions could be disrupted, while, in 1-methylnaphthalene it was not observed. Autoclave experiments showed that the coke yield after pyrolysis at 713 K was decreased when the asphaltene was pretreated with quinoline at 573 K for 1 h, compared to the yield without the pretreatment. While, in the case of pretreatment in 1-methylnaphthalene, the coke yield did not change significantly. The simulation's results above can be related to the difference in coke yield between two solvents; in quinoline some aromatic-aromatic stacking interactions could be disrupted and mobility of molecules was increased. This resulted in prevention of the asphaltenes from polymerizing, as in condensation reactions among aromatic rings. Consequently, the coke yield after the pretreatment with quinoline was decreased.     

Enhanced hot-carrier-degradation in LDD MOSFET's under pulsedstress

Hot-carrier degradation of lightly doped drain (LDD) MOSFET's under ac stress is investigated. Enhanced ac degradation occurs in LDD MOSFET's as well as in single-drain MOSFET's. However, there is a peculiar degradation mechanism in LDD MOSFET's. For single-drain MOSFET's, enhanced ac degradation appears in both threshold voltage and transconductance at stress drain voltages larger than a critical value. On the other hand, for LDD MOSFET's, although the enhanced degradation in threshold voltage and transconductance appears at stress drain voltages larger than a critical value, the enhanced degradation in transconductance appears even under stress drain voltages lower than the critical value. The difference in the ac-enhanced degradation between LDD and single-drain structures can be explained by a hot hole generated neutral-electron-trap model and the change in hot-hole-injected oxide region according to stress bias conditions     

High ratios of free to total insulin-like growth factor-I in early infancy

A case of huge desmoid tumor successfully treated by hyperthermoradiotherapy is described. A 23-year-old man with familial adenomatous polyposis was operated upon for a desmoid tumor in the mesenterium involving the right kidney and small intestine in 1988. In 1990, the tumor recurred and could not be resected because of the involvement of the vena cava. The tumor grew larger and larger, and occupied two-thirds of the right lower quadrant. Several therapies using sulindac, tamoxifen, prednisolone, indomethacin, luteinizing hormone-releasing hormone analogue, and ascorbate were all ineffective. Finally, the combination of radiation and hyperthermia was used over a 6-month period. At the end of the hyperthermoradiotherapy, the tumor in the abdominal wall was markedly reduced in size, and the protruded abdominal wall became flat. To our best knowledge, this is the first report of the successful treatment of a huge desmoid tumor by hyperthermoradiotherapy.     

Hot-carrier-injected oxide region in front and back interfaces inultra-thin (50 nm), fully depleted, deep-submicron NMOS andPMOSFET's/SIMOX and their hot-carrier immunity

The hot-carrier-injected oxide region in the front and back interfaces is systematically clarified for fully depleted surface-channel nMOSFET's and surface-channel and buried-channel pMOSFET's fabricated on an ultra-thin (50 nm)-film SIMOX wafer. Based on these results, the influence of these injected carriers on front-channel properties is investigated. NMOSFET degradation is shown to be caused by hot-carriers injected into the drain side of the front oxide and pMOSFET degradation by hot-electrons injected into the drain side of both the front oxide and the back oxide. Additionally, it is shown experimentally that these fully depleted devices with effective channel lengths between 0.1-0.2 μm have fairly high hot-carrier immunity, even for single-drain structures