On manifestation & physics of the Kurdjumov and spillover effects in carbon nanostructures,under intercalation of high density hydrogen

Abstract

Some experimental evidences and the physics (thermodynamics) of the nanoscale self-intercalation of high-density gaseous molecular hydrogen (ρ?≈?0.045?g/cm³, T?≈?300?K) into surface nanoclusters in highly oriented pyrolytic graphite and epitaxial graphene, as well as the nanoscale self-intercalation of high density solid molecular hydrogen (ρ?≈?0.5?g/cm³, T?≈?300?K, the compressed pressure ～ 0.5 Mbar) into graphite nanofibers are considered, with regard to the problem of compact and efficient hydrogen on-board storage and other clean energy applications. Perspectives of further developments of these results are considered, as well.     

Sodium storage properties of thin phosphorus-doped graphene layers developed on the surface of nanodiamonds under hot pressing conditions

Abstract

Phosphorus-doped graphene layers have been formed on the surface of nanodiamond (ND) particles by hot pressing of a mixture of purified detonation ND powder and triphenylphosphine (TPP) at 1000?°C and 100?bar. X-ray photoelectron spectroscopy detected about 1.7 at.% of phosphorus in the product, most of which was in the oxidized form. The same treatment conditions of the ND powder without the addition of TPP resulted in the only partial covering of some ND particles by sp²-hybridized carbon layers. The tests in Na-ion half-cells found that the pure carbon sample can reversibly sustain 42 mAh g^?1 at a current density of 0.1?A g^?1. For the phosphorus-doped sample, this value increases up to 54 mAh g^?1 due to mainly accumulation of sodium at various defects created in the graphitic layers as a result of phosphorus incorporation. Taking into account inertness of inner diamond cores, specific capacity values are 417 mAh g^?1 for phosphorus-doped graphene layers and 587 mAh g^?1 for non-doped ones.     

Fourier transform ion cyclotron resonance mass spectrometry at the true cyclotron frequency

Ion cyclotron resonance (ICR) cells provide stability and coherence of ion oscillations in crossed electric and magnetic fields over extended periods of time. Using the Fourier transform enables precise measurements of ion oscillation frequencies. These precisely measured frequencies are converted into highly accurate mass-to-charge ratios of the analyte ions by calibration procedures. In terms of resolution and mass accuracy, Fourier transform ICR mass spectrometry (FT-ICR MS) offers the highest performance of any MS technology. This is reflected in its wide range of applications. However, in the most challenging MS application, for example, imaging, enhancements in the mass accuracy of fluctuating ion fluxes are required to continue advancing the field. One approach is to shift the ion signal power into the peak corresponding to the true cyclotron frequency instead of the reduced cyclotron frequency peak. The benefits of measuring the true cyclotron frequency include increased tolerance to electric fields within the ICR cell, which enhances frequency measurement precision. As a result, many attempts to implement this mode of FT-ICR MS operation have occurred. Examples of true cyclotron frequency measurements include detection of magnetron inter-harmonics of the reduced cyclotron frequency (i.e., the sidebands), trapping field-free (i.e., screened) ICR cells, and hyperbolic ICR cells with quadrupolar ion detection. More recently, ICR cells with spatially distributed ion clouds have demonstrated attractive performance characteristics for true cyclotron frequency ion detection. Here, we review the corresponding developments in FT-ICR MS over the past 40 years.     

Dielectric Properties of Ultrathin CaF2 Ionic Crystals

Mechanically exfoliated 2D hexagonal boron nitride (h-BN) is currently the preferred dielectric material to interact with graphene and 2D transition metal dichalcogenides in nanoelectronic devices, as they form a clean van der Waals interface. However, h-BN has a low dielectric constant (≈3.9), which in ultrascaled devices results in high leakage current and premature dielectric breakdown. Furthermore, the synthesis of h-BN using scalable methods, such as chemical vapor deposition, requires very high temperatures (>900 °C) , and the resulting h-BN stacks contain abundant few-atoms-wide amorphous regions that decrease its homogeneity and dielectric strength. Here it is shown that ultrathin calcium fluoride (CaF₂) ionic crystals could be an excellent solution to mitigate these problems. By applying >3000 ramped voltage stresses and several current maps at different locations of the samples via conductive atomic force microscopy, it is statistically demonstrated that ultrathin CaF₂ shows much better dielectric performance (i.e., homogeneity, leakage current, and dielectric strength) than SiO₂, TiO₂, and h-BN. The main reason behind this behavior is that the cubic crystalline structure of CaF₂ is continuous and free of defects over large regions, which prevents the formation of electrically weak spots.     

Engineering Field Effect Transistors with 2D Semiconducting Channels: Status and Prospects

The continuous miniaturization of field effect transistors (FETs) dictated by Moore's law has enabled continuous enhancement of their performance during the last four decades, allowing the fabrication of more powerful electronic products (e.g., computers and phones). However, as the size of FETs currently approaches interatomic distances, a general performance stagnation is expected, and new strategies to continue the performance enhancement trend are being thoroughly investigated. Among them, the use of 2D semiconducting materials as channels in FETs has raised a lot of interest in both academia and industry. However, after 15 years of intense research on 2D materials, there remain important limitations preventing their integration in solid‐state microelectronic devices. In this work, the main methods developed to fabricate FETs with 2D semiconducting channels are presented, and their scalability and compatibility with the requirements imposed by the semiconductor industry are discussed. The key factors that determine the performance of FETs with 2D semiconducting channels are carefully analyzed, and some recommendations to engineer them are proposed. This report presents a pathway for the integration of 2D semiconducting materials in FETs, and therefore, it may become a useful guide for materials scientists and engineers working in this field.     

Effects of material thickness and processing method on poly(lactic-co-glycolic acid) degradation and mechanical performance

In this study, the effects of material thickness and processing method on the degradation rate and the changes in the mechanical properties of poly(lactic-co-glycolic acid) material during simulated physiological degradation were investigated. Two types of poly(lactic-co-glycolic acid) materials were considered: 0.12?mm solvent-cast films and 1?mm compression-moulded plates. The experimental results presented in this study were compared to the experimental results of Shirazi et al. (Acta Biomaterialia 10(11):4695–703, 2014) for 0.25?mm solvent-cast films. These experimental observations were used to validate the computational modelling predictions of Shirazi et al. (J Mech Behav Biomed Mater 54: 48–59, 2016) on critical diffusion length scale and also to refine the model parameters. The specific material processing methods considered here did not have a significant effect on the degradation rate and the changes in mechanical properties during degradation; however, they influenced the initial molecular weight and they determined the stiffness and hardness of the poly(lactic-co-glycolic acid) material. The experimental observations strongly supported the computational modelling predictions that showed no significant difference in the degradation rate and the changes in the elastic modulus of poly(lactic-co-glycolic acid) films for thicknesses larger than 100?μm.     

Trifluoromethylation of [60]- and [70]Fullerene in the Ionization Chamber of a Mass Spectrometer

Abstract

Both [60]- and [70]fullerene react with either the Scherer radical (perfluorodiisopropylethylmethyl, C₉F₁₉), a mixture of branched perfluorononenes (C₉F₁₈, the product of hexafluoropropene trimerization), or β-fluorosulphatotetrafluoroethyldiheptafluoroisopropylmethyl radical (C₉F₁₈OSO₂F) in the ionization chamber of a mass spectrometer to give the positive parent ions of trifluoromethylation products, the reaction being accompanied by hydrogen addition. The reaction occurs at least partly on the walls of the ionization chamber, by a radical mechanism employing CF₃ radicals formed from the radical reactants both thermally and under electron impact; only the latter route occurs with the perfluorononenes.