含钡合金的生产及其对钢液脱氧行为的研究

介绍了含钡合金的生产状况。在MoSi2炉上对钢管钢进行了含钡合金脱氧行为的研究，然后在150tLF／VD精炼设备上进行了使用含钡合金的工业试验。研究中主要选取SiAlBa、SiCaBa、SiAlBaCa、SiAlBaCaSr及用于钙处理的SiCa包芯线，并选用Al和FeSiAl作为对比脱氧剂，分别考察了实验室条件下和实际生产过程中，采用钡系合金对钢液脱氧的全氧含量，脱氧产物的分布、尺寸和形貌，探讨了钡系合金脱氧和对夹杂物的变质作用的机理。     

ICP-AES法测定硅铝钡合金中的钡

介绍ICP—AES法测定硅铝钡中的钡的分析方法，用氢氟酸一硝酸一高氯酸混合酸溶解试样，用钡的233．527nm谱线测定钡．该方法简便快速，精密度好，准确度高，加标试验回收率为99％～100％，相对标准偏差为0．25％～0．56％．     

含钡合金在钢液中的脱氧行为研究

在MoSi2炉上采用MgO质坩蜗对钢管进行了含钡合金脱氧行为的研究。实验中钡系合金主要选取SiAUBa、SiCaBa、SiAlBaCa、SiAlBeCaSr及用于钙处理的SiCa包芯线，选用Al作为对比脱氧剂，考察了钡系合金脱氧的全氧含量，脱氧产物的分布、尺寸和形貌，探讨了钡系合金脱氧和对夹杂物变性作用的机理。     

高Q Ba(Zn_(1/3)Ta_(2/3))O_3介质谐振器材料及其在毫米波系统中的应用

叙述了Ｂａ（Ｚｎ１／３Ｔａ２／３）Ｏ３介质谐振器材料的制备、结构、微波性能及典型应用。Ｂａ（Ｚｎ１／３Ｔａ２／３）Ｏ３介质材料介电常数εｒ为２９．５，频率温度系数τ≈０（－５５～＋８５℃），１０ＧＨｚ下最大无载Ｑ值１４７００，在２８ＧＨｚ测得Ｑ值约为４８００。这种材料具有高Ｑ值，特别适用于Ｘ以上波段作为振荡器电路中频率稳定元件。用这种介质谐振器已研制出８ｍｍ介质稳频微带耿氏振荡器，频率稳定度小于１０×１０－６／℃，最大输出功率达１８０ｍＷ。     

BaTiO_3粉体中Ti/Ba比分析方法的比较

提出了用ＫＯＨ熔融分解ＢａＴｉＯ３粉体〔１〕，再用浓ＨＣｌ酸化后，用感应耦合等离子体发射光谱法（ＩＣＰ—ＡＥＳ法）测定试样中的Ｔｉ／Ｂａ比，并与化学分析法的结果作了比较，显示出ＩＣＰ—ＡＥＳ法简便，快速，结果更好。     

Comparison of ISO 14902:2001 with AOCS Ba 12a-2020 for determining trypsin inhibitor activity in protein products

For measuring trypsin inhibitor activity (TIA), there are two major official methods: American Oil Chemists Society (AOCS) method Ba 12a-2020 and International Organization for Standardization (ISO) 14902:2001. The former was recently approved. The two methods differ in sample preparation, extraction, colorimetric assay systems and TIA calculations. In this study, the two methods were symmetrically compared using three unique sets of samples: assorted protein products of soybeans, pulses, and grains; soybeans boiled for varied durations; and soy white flakes toasted for varied durations. For given samples, significant differences existed in TIA measured by the two methods, resulting from effects related to the assay systems and TIA calculations, not from the difference in sample preparation and extraction. When the same trypsin was used, TIA (in mg trypsin inhibited/g sample) measured by the two methods were highly correlated (r = 0.9973, n = 27), giving an equation of y = 0.5464x − 0.4887, where y represents ISO values and x for AOCS values. The line connecting ratios of ISO/AOCS in TIA and AOCS values remained relatively flat around 0.53 but started to curve down when TIA approached the lowest. Furthermore, for the same samples, TIA values measured by the ISO method decreased with increasing specific activity of trypsin used, while AOCS values remained consistent, leading to decreasing ratios of ISO/AOCS. Therefore, accurate and direct comparison of the two methods was impossible. It could not be resolved by simply changing ISO method's calculations as hypothesized earlier. Regardless, for most samples, ISO values were roughly about 55% of AOCS values.     

In2O3 + xBaO (x = 0.5-5 at.%) - A novel material for trace level detection of NOx in the ambient

Indium oxide (In₂O₃) doped with 0.5-5 at.% of Ba was examined for their response towards trace levels of NO_x in the ambient. Crystallographic phase studies, electrical conductivity and sensor studies for NO_x with cross interference for hydrogen, petroleum gas (PG) and ammonia were carried out. Bulk compositions with x ≤ 1 at.% of Ba exhibited high response towards NO_x with extremely low cross interference for hydrogen, PG and ammonia, offering high selectivity. Thin films of 0.5 at.% Ba doped In₂O₃ were deposited using pulsed laser deposition technique using an excimer laser (KrF) operating at a wavelength of (λ) 248 nm with a fluence of ∼3 J/cm² and pulsed at 10 Hz. Thin film sensors exhibited better response towards 3 ppm NO_x quite reliably and reproducibly and offer the potential to develop NO_x sensors (Threshold limit value of NO₂ and NO is 3 and 25 ppm, respectively).     

低温烧结Dy-B-Si-O系玻璃介质掺杂Ba_(0.6)Sr_(0.4)TiO_3陶瓷

采用溶胶-凝胶法制备了Dy-B-Si-O系玻璃介质掺杂Ba0.6Sr0.4TiO3(BST)陶瓷粉体,并烧结成瓷。探讨了玻璃介质对BST陶瓷密度、烧结温度和介电性能的影响,利用扫描电子显微镜(SEM)、自动元件分析仪测试了BST陶瓷的显微结构和介电性能。研究结果表明,添加Dy-B-Si-O系玻璃介质降低了陶瓷烧结温度,提高了陶瓷致密度;随着Dy-B-Si-O系玻璃介质中Dy2O3组分含量的增加,介电常数增大;介电损耗先增大后减小,介电损耗最小值约为0.01,可满足在电压可调电容器上的使用要求。     

钴钇掺杂（Ba,Sr）TiO_3基介电陶瓷的制备与性能研究

采用二次固相反应法制备Ba0.7Sr0.3TiO3介电陶瓷,研究了掺杂钴、钇离子对钛酸锶钡介电性能的影响。结果表明,陶瓷样品Y3＋、Co3＋的最佳掺杂浓度分别为0.04mol%和0.05mol%,最佳烧结温度为1340℃,样品的相对介电常数为4200,介电损耗（tanδ）为0.005。样品的结构为四方晶系,P4mm空间群。获得了高介电常数、低损耗的Ba0.7Sr0.3TiO3介电陶瓷。     

Upeonversion Emission and Paramagnctism of Colloid Ba2ErF7 and Ba2ErFT：Yb3＋ Nanoerystals Synthesized with Solvothermal Method

Ultrasmall near-monodisperse Ba2ErF7 nanocrystals with average crystal size 9.6 nm were synthesized with solvothermal method. The X-ray diffraction （XRD） and transmission electron microscopy （TEM） assays reveal that the as-synthesized Ba2ErF7 nanocrystals are of the cubic structure with the cell parameter of 5.943 A, instead of the reported orthorhombic and tetragonal structure. Two emission bands originated from 2Hwj4H3/2 → 4F5/2 and 4F9/2 ----＋ 4115,2 of Er3＋ can be observed under a 980 nm laser excitation. The magnetic mass susceptibility of the as-synthesized BazErF7 nanocrystals reaches 4.293 × 10-5 emu g-1 Oe-1.