High energy storage and ultrafast discharge in NaNbO3-based lead-free dielectric capacitors via a relaxor strategy

Dielectric capacitors with decent energy storage and fast charge-discharge performances are essential in advanced pulsed power systems. In this study, novel ceramics (1-x)NaNbO₃-xBi(Ni_2/3Nb_1/3)O₃(xBNN, x = 0.05, 0.1, 0.15 and 0.20) with high energy storage capability, large power density and ultrafast discharge speed were designed and prepared. The impedance analysis proves that the introducing an appropriate amount of Bi(Ni_0·5Nb_0.5)O₃ boosts the insulation ability, thus obtaining a high breakdown strength (E_b) of 440 kV/cm in xBNN ceramics. A high energy storage density (W_total) of 4.09 J/cm³, recoverable energy storage density (W_rec) of 3.31 J/cm³, and efficiency (η) of 80.9% were attained in the 0.15BNN ceramics. Furthermore, frequency and temperature stability (fluctuations of W_rec ≤ 0.4% over 5–100 Hz and W_rec ≤ 12.3% over 20–120 °C) were also observed. The 0.15BNN ceramics exhibited a large power density (19 MW/cm³) and ultrafast discharge time (~37 ns) over the range of ambient temperature to 120 °C. These enhanced performances may be attributed to the improved breakdown strength and relaxor behavior through the incorporation of BNN. In conclusion, these findings indicate that 0.15BNN ceramics may serve as promising materials for pulsed power systems.     

High-voltage and low specific on-resistance power UMOSFET using P and N type columns

For the first time, we present the unique features exhibited by power 4H–SiC UMOSFET in which N and P type columns (NPC) in the drift region are incorporated to improve the breakdown voltage, the specific on-resistance, and the total lateral cell pitch. The P-type column creates a potential barrier in the drift region of the proposed structure for increasing the breakdown voltage and the N-type column reduces the specific on-resistance. Also, the JFET effects reduce and so the total lateral cell pitch will decrease. In the NPC-UMOSFET, the electric field crowding reduces due to the created potential barrier by the NPC regions and causes more uniform electric field distribution in the structure. Using two dimensional simulations, the breakdown voltage and the specific on-resistance of the proposed structure are investigated for the columns parameters in comparison with a conventional UMOSFET (C-UMOSFET) and an accumulation layer UMOSFET (AL-UMOSFET) structures. For the NPC-UMOSFET with 10 µm drift region length the maximum breakdown voltage of 1274 V is obtained, while at the same drift region length, the maximum breakdown voltages of the C-UMOSFET and the AL-UMOSFET structures are 534 and 703 V, respectively. Moreover, the proposed structure exhibits a superior specific on-resistance (R_on,sp) of 2 mΩ cm², which shows that the on-resistance of the optimized NPC-UMOSFET are decreased by 56% and 58% in comparison with the C-UMOSFET and the AL-UMOSFET, respectively.     

Breakdown of oil films and formation of residual films

The breakdown processes of oil films under quasi-static loading have been investigated by using a newly developed steel-oil-mercury system. The relationship between the thickness and breakdown ratio of a hexadecane film is represented by a single master curve independently of the indentation speed, indentation load, and temperature. The master curve shows that the breakdown process of hexadecane includes two stages; one is the decrement of the thickness without breakdown and the other is the decrement of the thickness with a drastic progress of breakdown. By solving a small amount of fatty acid in hexadecane, the thickness increases and the breakdown ratio decreases noticeably; a multilayer residual film supporting normal load is formed between two metal surfaces. Experiments at different temperatures reveal a negative relationship between the temperature and thickness of residual film, which indicates that the residual film is organized by physical interaction rather than chemical interaction. At least under a lower concentration, the residual film appears to consist of not only fatty acid molecules but also hexadecane molecules.     

Theory of a novel voltage-sustaining layer for power devices

The theory of a novel voltage-sustaining layer for power devices, called a Composite Buffer layer (CB-layer for short) is proposed. The CB-layer can be implemented in several ways, one particular implementation is used here, which consists of alternating n- and p-type regions, that are parallel to the direction of the applied electric field. In the off-state, the fields induced by the depletion charges of both region types compensate each other to allowing the doping in both n-regions and p-regions to be very high without causing a reduction of the breakdown voltage. In the onstate the heavy doping ensures the voltage drop is very low and that the saturation current density high. A simple relationship between the specific on-resistance and R_on and the sustaining voltage V_B can be shown to be R_on=2.53 × 10⁻⁷bV_B^1.23 ωcm², where the breadth b (in μm) of each region is much smaller than the thickness W. The design method of the CB-layer is discussed in some detail. The simulation results are shown to be in perfect agreement with the theory. The structure has application to a wide variety of different power devices. An RMOST structure has been used to demonstrate the benefits of the technique in the paper, for which excellent performance is demonstrated.     

大把捆远程维护仪的研究

采用单片机开发大把捆远程维护仪，通过电话线，维护仪远程拨叫维护中心，远程采集机器运行状态，远程调整参数，使机器处于最佳状态运行；维修中心专家远程判断故障点，远程维护或远程指导维护，节省维护成本和人力资源。     

场效应管设计

本文概述了场效应管的分类和设计。设计按常规程序考虑，特殊的ＭＯＳ管还要考虑相关许多其它因素，以及理论与实践结合后的取舍。     

氧化铝丝的研制

氧化铅丝生产过程中最关键的工艺是连续阳极氧化。氧化膜击穿电压决定于氧化膜厚度。控制膜厚度的三要素为:电解液(成份、浓度及温度),槽电压和铝丝走速。     

Glass-ceramics of barium strontium titanate for high energy density capacitors

Barium strontium titanate glass-ceramics were successfully produced with one major crystalline phase when Al₂O₃ was added to the melt. A dielectric constant of 1000 and a breakdown strength of 800 kV/cm was achieved; however the energy density was only measured to be 0.3–0.9 J/cm³. These energy density values were lower than anticipated due to the presence of dendrites and pores in the microstructure. Using BaF₂ as a refining agent improved the microstructure and doubled the energy density for BST 80/20 samples. However, no refining agent reduced the increasing amount of hysteresis that developed with increasing applied electric field. This phenomenon is believed to be due to interfacial polarization.     

杂散电流对阴极保护效果影响的模拟实验

本文通过模拟地下管道阴极保护的现场，测定了地下的杂散电流及其对阴极保护效果的影响，并对相关问题进行了分析。     

Breakdown of passive film on nickel in borate solutions containing halide anions

The effect of Cl⁻, Br⁻ and I⁻ anions as aggressive agents on the anodic behaviour of nickel electrode in deaerated Na₂B₄O₇ solutions have been investigated by galvanostatic polarization technique. Lower concentrations of the halide anions have no effect on the mechanism of nickel passivation. An increase in the halide anions concentration causes oscillation of the potential in the oxygen evolution region. This could be attributed to the destruction of the passivity by halide anions and repassivation of the film by anodic current and/or OH⁻ anions. Higher aggressive anion concentrations cause breakdown of the passive film and initiated pitting corrosion. As the temperature increases, the breakdown potential is shifted towards the more negative direction. On the other hand, as the pH of the solution increases, the breakdown potential is shifted toward more positive direction, indicating increased protection of the passive film. The activation energy, , of the oxide film formation in the presence of Cl⁻ anions was calculated and was found to be 21 kJ/mol.