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1.
《Ceramics International》2022,48(11):15207-15217
SCAPS solar cell simulation program was applied to model an inverted structure of perovskite solar cells using Cu-doped Ni1-xO thin films as hole transport layer. The Cu-doped Ni1-xO film were made by co-sputtering deposition under different deposition conditions. By increasing the amount of the Cu-dopant, the film crystallinity enhanced whereas the bandgap energy decreased. The transmittance of the thin films decreased significantly by increasing the sputtering power of copper. High quality, uniform, compact, and pin-hole free films with low surface roughness were achieved. The structural, chemical, surface morphology, optical, electrical, and electronic properties of the Cu doped Ni1-xO films were used as input parameters in the simulation of Pb-based (MAPbI3-xClx) and Pb-free (MAGeI3) perovskite solar cells. Simulation results showed that the performance of both Pb-based and Pb-free perovskite solar cell devices significantly enhanced with Cu-doped Ni1-xO film. The highest power conversion efficiency (PCE) for the Pb-free perovskite solar cell is 8.9% which is lower than the highest PCE of 17.5% for the Pb-based perovskite solar cell. 相似文献
2.
《Ceramics International》2021,47(19):27342-27350
The (CrAlTiNbV)Nx coatings are fabricated by controlling the substrate bias via magnetron sputtering method. Under low substrate bias, the coating tends to form a loose columnar crystal structure with (200) preferred orientation. However, when the substrate bias increases, the coating transforms into a dense nanocrystalline structure, and the (111) orientation is enhanced. As the substrate bias increases, the residual stress and hardness of the coating gradually increase, while the adhesion strength decreases slightly. Friction tests show that the coating possesses the lowest average friction coefficient (about 0.06) and wear rate (8.7 × 10-9 mm3/N·m) in 4050# aviation lubricant, which is achieved under the substrate bias of -96 V and -126 V, respectively. 相似文献
3.
《Ceramics International》2022,48(13):18151-18156
The electrical properties and domain reversal in BiFeO3 ferroelectric films were studied using sandwiched heterostructures and piezoresponse force microscopy. A robust polarization state was observed, combined with a switchable domain pattern and a remanent polarization of approximately 100 μC cm?2. In addition, domain reversal was explored using scanning probe microscopy. The results show that dipoles could be reversed along the direction of the electric field under a negative tip bias, leading to carrier gathering near the domain walls. The enhanced conductivity near the domain walls was owing to the discontinuous polarization boundary conditions. In addition, typical diode-like current transport properties are sensitive to various temperature conditions, which is attributed to the Schottky barriers at the contact interface. These findings extend the current understanding of domain texture reversal in ferroelectric films and shed light on their potential applications for future ferroelectric random-access memory operations over a wide temperature range. 相似文献
4.
Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) films are attracting famous applications in antistatic coating, energy storage and conversion, printed electronics, and biomedical fields due to their conductivity, optical transparency and flexibility. However, PEDOT:PSS has poor dispersion stability during long-term storage and transport. Moreover, the dried PEDOT:PSS films are insoluble in any solvent and cannot be redispersed again. In comparison to bake drying, here, a feasible strategy to achieve mechanically redispersed PEDOT:PSS with the help of freeze-drying process was reported. The redispersed PEDOT:PSS can recover not only the initial characters such as pH, chemical composition, viscosity, and particle size under similar solid contents, but also conductivity and surface morphology of treated films. In addition, the treated film exhibits self-healing properties similar to pristine film in terms of mechanical and electrical properties. This technology enables reuse and overcomes the technical problems of PEDOT:PSS dispersion, realizing real-time processing to meet variable applications. 相似文献
5.
本文以肇庆市固体废物产业发展为实例,阐明全市固体废物产业发展现状以及发展方向,并提出了相应的策略。 相似文献
6.
Chenglai Xin Rong Yuan Jiang Wu Qingyuan Wang Yanan Zhou 《Ceramics International》2021,47(3):3411-3420
A novel method for fabricating a nano-Cu/Si3N4 ceramic substrate is proposed. The nano-Cu/Si3N4 ceramic substrate is first fabricated using spark plasma sintering (SPS) with the addition of nanoscale multilayer films (Ti/TiN/Ti/TiN/Ti) as transition layers. The microstructures of the nano-Cu metal layer and the interface between Cu and Si3N4 are investigated. The results show that a higher SPS temperature increases the grain size of the nano-Cu metal layer and affects the hardness. The microstructure of the transition layer evolves significantly after SPS. Ti in the transition layer can react with Si3N4 and with nano-Cu to form interfacial reaction layers of TiN and Ti–Cu, respectively; these ensure stronger bonding between nano-Cu and Si3N4. Higher SPS temperatures improve the diffusion ability of Ti and Cu, inducing the formation of Ti3Cu3O compounds in the nano-Cu metal layer and Ti2Cu in the transition layer. This study provides an important strategy for designing and constructing a new type of ceramic substrate. 相似文献
7.
《Ceramics International》2021,47(18):25574-25579
Vanadium dioxide (VO2) is known as a typical 3d-orbital transition metal oxide exhibiting the metal-to-insulator-transition (MIT) property near room temperature. However, their electronic applications have been challenged by the quality and uniformity of VO2 thin films. In this work, we demonstrate the high sensitivity in the valence charge of vanadium and the MIT properties of the VO2 thin films to the deposition temperature. This observation indicates the necessity to eliminate the inhomogeneity in the temperature distribution of substrate during the vacuum-deposition process of VO2. In addition, a high thermoelectric power factor (PF, e.g., exceeding 1 μWcm−1K−2) was achieved in the metallic phase of the VO2 thin films and this value is comparable to typical organic or oxide thermoelectric materials. We believe this high PF enriches the potential functionality in thermoelectric energy conversions beyond the existing electronic applications of the current vacuum-grown VO2 thin films. 相似文献
8.
《Ceramics International》2022,48(4):5066-5074
We studied the morphological nature of various thin films such as silicon carbide (SiC), diamond (C), germanium (Ge), and gallium nitride (GaN) on silicon substrate Si(100) using the pulsed laser deposition (PLD) method and Monte Carlo simulation. We, for the first time, systematically employed the visibility algorithm graph to meticulously study the morphological features of various PLD grown thin films. These thin-film morphologies are investigated using random distribution, Gaussian distribution, patterned heights, etc. The nature of the interfacial height of individual surfaces is examined by a horizontal visibility graph (HVG). It demonstrates that the continuous interfacial height of the silicon carbide, diamond, germanium, and gallium nitride films are attributed to random distribution and Gaussian distribution in thin films. However, discrete peaks are obtained in the brush and step-like morphology of germanium thin films. Further, we have experimentally verified the morphological nature of simulated silicon carbide, diamond, germanium, and gallium nitride thin films were grown on Si(100) substrate by pulsed laser deposition (PLD) at elevated temperature. Various characterization techniques have been used to study the morphological, and electrical properties which confirmed the different nature of the deposited films on the Silicon substrate. Decent hysteresis behavior has been confirmed by current-voltage (IV) measurement in all the four deposited films. The highest current has been measured for GaN at ~60 nA and the lowest current in SiC at ~30 nA level which is quite low comparing with the expected signal level (μA). The HVG technique is suitable to understand surface features of thin films which are substantially advantageous for the energy devices, detectors, optoelectronic devices operating at high temperatures. 相似文献
9.
《Ceramics International》2020,46(14):22282-22289
Self-assembly is an emerging strategy for preparing composite cathodes with good oxygen electrochemical reduction activity and congenital chemical compatibility for intermediate-temperature solid oxide fuel cell (IT-SOFC). Here we report that a self-assembled BaCo0.6Zr0.4O3-δ (BZC-BC) nanocomposite is prepared through one-pot glycine-nitrate process and exhibits high cathode performance. The BZC-BC nanocomposite is composed of 62 mol% cubic perovskite BaZr0.82Co0.18O3-δ (BZC) as an ionic conductor and 38 mol% hexagonal perovskite BaCo0.96Zr0.04O2.6+δ (12H-BC) as a mixed ionic and electronic conductor. The BZC-BC nanocomposite has the pomegranate-like particles aggregated with a larger number of nanoparticles (50-100 nm) which greatly enlarge the three-phase boundary sites. The BZC-BC nanocomposite exhibits a thermal expansion coefficient of 12.89 × 10−6 K−1 well-matched with that of Ce0.8Gd0.2O3-δ (12.84 × 10−6 K−1) electrolyte. The high electro-catalytic activity of BZC-BC nanocomposite cathode for oxygen reduction is reflected by the low polarization resistances of oxygen ions incorporation at cathode/electrolyte interface (0.02823 Ω cm2), oxygen species diffusion (0.03702 Ω cm2) and oxygen adsorptive dissociation (0.07609 Ω cm2) at 700 °C. The single cell with BZC-BC nanocomposite cathode achieves the maximum power density of 1094 mW cm−2 at 650 °C and shows good stability under 25 h run. 相似文献
10.
《Ceramics International》2020,46(6):7396-7402
Nanocrystalline CuInS2 thin films were deposited on borosilicate glass substrates via chemical spray pyrolysis method. The structural, morphological, optical, and electrical properties were studied as a function of increasing annealing temperature from 250 to 350 ̊C. XRD analysis showed mixed phases at lower temperatures with the preferred orientation shifting towards the (112) chalcopyrite CuInS2 plane at higher substrate temperature. The crystallite size increased slightly between 13 and 18 nm with increase in annealing temperature. The optical band gap was determined on basis of Tauc extrapolation method and the Wemple–Di-Domenico single oscillator model. Possible structural and quantum confinement effect may have resulted in relatively larger band gaps of 1.67–2.04 eV, relative to the bulk value of 1.5 eV. The presence of CuxS in the as-deposited and wurtzite peaks after annealing at 350 ̊C play a role in influencing the optical and electrical properties of CuInS2 thin films. 相似文献