High-voltage and low specific on-resistance power UMOSFET using P and N type columns

For the first time, we present the unique features exhibited by power 4H–SiC UMOSFET in which N and P type columns (NPC) in the drift region are incorporated to improve the breakdown voltage, the specific on-resistance, and the total lateral cell pitch. The P-type column creates a potential barrier in the drift region of the proposed structure for increasing the breakdown voltage and the N-type column reduces the specific on-resistance. Also, the JFET effects reduce and so the total lateral cell pitch will decrease. In the NPC-UMOSFET, the electric field crowding reduces due to the created potential barrier by the NPC regions and causes more uniform electric field distribution in the structure. Using two dimensional simulations, the breakdown voltage and the specific on-resistance of the proposed structure are investigated for the columns parameters in comparison with a conventional UMOSFET (C-UMOSFET) and an accumulation layer UMOSFET (AL-UMOSFET) structures. For the NPC-UMOSFET with 10 µm drift region length the maximum breakdown voltage of 1274 V is obtained, while at the same drift region length, the maximum breakdown voltages of the C-UMOSFET and the AL-UMOSFET structures are 534 and 703 V, respectively. Moreover, the proposed structure exhibits a superior specific on-resistance (R_on,sp) of 2 mΩ cm², which shows that the on-resistance of the optimized NPC-UMOSFET are decreased by 56% and 58% in comparison with the C-UMOSFET and the AL-UMOSFET, respectively.     

Wear and Creep Characteristics of a Carbon‐Derived Si3N4/SiC Micro/Nanocomposite

In the presented work some properties of a recently developed Si₃N₄/SiC micro/nanocomposite have been investigated. The material was tested using a pin on disc configuration. Under unlubricated sliding conditions using Si₃N₄ pin at 50 % humidity, the friction coefficient was in the range of 0,6 ‐ 0,7. The reduction of humidity resulted in a lower coefficient of friction, in vacuum the coefficient of friction had a value of about 0,6. The wear resistance in vacuum was significantly lower then that in air. The wear patterns on the Si₃N₄+SiC disc revealed that mechanical fracture was the wear controlling mechanism. Creep tests were realized in four point bending configuration in the temperature interval 1200‐1400 °C at stresses 50,100 and 150 MPa and the minimal creep deformation rate was established for each stress level. The activation energy, established from the minimal creep deformation had a value of about 360 kJ/mol and the stress exponent values were in the range of 0.8‐1.28. From the achieved stress exponents it can be assumed that under the studied load/temperature conditions the diffusion creep was the most probable creep controlling mechanism.     

激光熔覆Ni基SiC合金涂层组织与性能的研究

利用5kWCO2连续波激光器在16Mn钢基材表面对含20%(体积比)SiC陶瓷粉末的镍基自熔性合金粉末进行激光熔覆得到Ni基SiC合金涂层(NiSiC)。研究了合金涂层的组织形貌及相结构,并用单纯的镍基合金涂层(Ni60)进行了显微硬度及滑动磨损性能的对比试验。结果表明,NiSiC合金涂层由γ枝晶及其间的共晶组织组成,主要组成相为γ-Ni,γ-(Ni,Fe)固溶体和(Cr,Fe)7C3,Cr23C6及(Cr,Si)3Ni3Si等化合物。添加SiC的镍基合金涂层NiSiC比单纯的镍基合金涂层Ni60具有较高的硬度和耐磨性。     

锡矿山重复水利用的措施及效果

本介绍了锡矿山前闪星锑业有限责任公司如何加强对关键耗水工序的管理及提高重复水利用率的措施，并对所取得的效果进行了阐述，可供用水大户如何节水以借鉴。     

SiC颗粒增强铝基复合材料切削表面分形维数及其与抗磨损性能的关系

做为一种耐磨性能很好的材料 ,SiC颗粒增强铝基复合材料切削加工表面具有分形特征。实际研究表明SiC颗粒增强铝基复合材料切削加工表面分形维数与抗磨损性能有密切关系 ,本文还分析了表面分形维数越大其抗磨损性能越强的机理。     

TiB2和SiCW对Al2O3陶瓷材料高温摩擦磨损特性的影响

研究了Ａｌ２Ｏ３、Ａｌ２ｏ３／ＴｉＢ２和Ａｌ２Ｏ３／ＴｉＢ２／ＳｉＣＷ三处陶瓷材料在不同条件下的擦靡损特性。结果表明：三种陶瓷材料与硬质合金摩擦副的摩擦系数随温度温度的增加有不同的变化规律，摩擦表面的Ｘ射线衍射分析表明，摩擦系数的变化与陶瓷物膜的和结构有关，在高温下Ａｌ２Ｏ３／ＴｉＢ２陶瓷材料摩擦表面形成了具有优良的高温润性的ＴｉＯ２氧化膜，因而ＴｉＢ２的加入明显改善了Ａｌ２Ｏ３陶瓷材料 摩擦磨损     

镀液中SiC含量和粒径对Ni-P-SiC复合化学镀层性能的影响

采用化学镀方法制备了Ni P SiC复合镀层 ,系统研究了镀液中SiC含量和粒径对镀层结构及显微硬度的影响。结果表明 ,镀层中SiC析出量随镀液中SiC含量的增加而增加 ,在SiC含量一定的情况下 ,当SiC粒径为 7.0 μm时 ,析出量最大 ;镀液中SiC的含量和粒度对原始镀层的硬度影响不大 ,但对 4 0 0℃热处理后的镀层硬度有显著影响     

纳米4-H碳化硅薄膜的掺杂现象

对纳米晶SiC薄膜进行了P和B的掺杂,B掺杂效率比P高,其暗电导预前因子与激活能遵守Meyer-Neldel规则,并有反转Meyer-Neldel规则出现.掺杂效率比非晶态碳化硅薄膜高是纳米碳化硅薄膜的特点之一.非晶态中的隧穿和边界透射对输运有一定贡献.     

硅片和硅器件工艺中的背面损伤吸除技术

本文介绍了硅片背面的三种主要损伤吸除技术：机械损伤、激光辐照和离子注入技术。对这三种吸除技术的机理、工艺条件、应用情况和近来进展，作了详细的评述。     

Application of SiC-Si functionally gradient material to thermoelectric energy conversion device

Because of its high–temperature chemical stability, SiC ceramic is a promising material for high-temperature device applications such as thermoelectric energy converters. However, the electrical conductivity of SiC ceramic is too low for it to be used as a thermoelectric energy converter at the cold junction. Therefore, we propose a SiC-Si functionally gradient material (FGM) in order to improve the electrical conductivity of the SiC ceramic at the cold junction. An SiC rod was fired in a temperature gradient furnace. One end of the SiC rod was maintained at 2473 K and the other end was maintained at 1973 K for 30 min. After firing, the porous SiC edge fired at 1973 K was dipped into molten Si in order to infiltrate molten Si into the porous SiC. The microstructure of the FGM is classified into three regions: the SiC-Si composite material; the porous SiC ceramic; and the densified SiC ceramic. The electrical conductivity, the Seebeck coefficient and the thermal conductivity for each region of SiC-Si FGM was measured at 300 K; a figure of merit was calculated. The figure of merit of the SiC-Si FGM at the cold junction, at room temperature, was 10⁸ times higher than that of a nongradient SiC ceramic.