Three-dimensional and anisotropic numerical analysis of a PEM fuel cell

In this study, the effects of cell temperature and relative humidity on charge transport parameters are numerically analyzed. In order to perform this analysis, three-dimensional and anisotropic numerical models are developed. The numerical models are integrated into the experimental values for anisotropic electrical conductivities, as depending on cell temperature and relative humidity, that were obtained from our previous study. The achieved results indicate that the values of current densities in the in-plane direction increase with increasing cell temperature and relative humidity, while the current densities reach a maximum in the rib regions for both the numerical model at the through-plane direction. The behaviors of electrolyte potentials are similar with changes in the cell temperature and relative humidity. In addition, the cathode electrical potentials in both the in-plane direction and through-plane direction do not change to a considerable amount with increasing cell temperature and relative humidity.     

黄河龙口水利枢纽坝基岩体钙质充填夹层地质分析与试验研究

龙口水利枢纽坝基岩体主要由奥陶系中统马家沟组(O2m2)灰岩组成,其中发育有多层软弱夹层。作为其中之一的钙质充填夹层,强度虽不很低,但由于处于坝基下的持力层内,间距不大,发育密集,产状平缓,是坝基浅层抗滑稳定的主要控制因素,因此,在大坝抗滑稳定分析时,应进行分析和研究。     

多层梯度层InGaAs（P）InPSAGM雪崩光电二极管

本文报道采用液相外延（ＬＰＥ）生长和传统光刻制管工艺研制出引入多层（三层或三层以上）中间能带隙过渡的吸收区、倍增区分离的ＩｎＧａＡｓ（Ｐ）／ＩｎＰ雪崩光电二极管（简称ＩｎＧａＡｓ（Ｐ）／ＩｎＰＳＡＧＭＡＰＤ），其技术指标为：击穿电压ＶＢ＝４０～９０Ｖ；０．９ＶＢ时的暗电流Ｉｄ最小可小于１０ｎＡ；１．３μｍ时光响应度Ｒｅ＝０．６～０．８Ａ／Ｗ，倍增因子Ｍ≥２０（Ｍｍａｘ＞４０），过剩噪声因子Ｆ≌５和较宽频带响应特性。     

液晶光阀光电导层光吸收系数的研究

用化学气相沉积法制备了液晶光阀中光电导层———非晶硅薄膜,从实验中得出最佳制备工艺的参数取值。给出了用包络线法测量非晶硅薄膜光吸收系数的原理,测量了样品的光吸收系数随波长的变化规律。得到样品在最佳工艺条件下的光吸收系数高于1×103cm-1。     

Thin hard coatings fracture propagation during the impact test

One of the most significant applications of the impact test is to investigate thin hard coatings fatigue properties. Herein the test conditions and duration up to the film damage initiation, are considered in order to determine the critical stresses associated with the coating fatigue strength. Moreover, the subsequent film damage propagation is a significant mechanism as well, since it refers to the ability of the coating to withstand loads after its fatigue damage initiation. In order to describe the film fracture propagation the failed area ratio was introduced and an algorithm to determine this magnitude developed, based on the analysis of imprint scanning electron microscopy graphs. The application of the coating failed area ratio will be demonstrated in various impact test film cases, also with superficial thin layers. The top layers do not affect, in general, the failure initiation of the basic coating. However, according to the obtained results, the superficial films influence the basic coating failure propagation rate during the impact test.     

Electrochemical Aspects of Electroosmotic Dewatering of Clay Suspensions

An attempt is made to elucidate the electrochemical aspects of the electroosmotic dewatering (EOD) of clays as reported in some recent work, especially that on interrupted DC power electroosmotic dewatering published by Rabie, Mujumdar and Weber (2). These authors showed that the dewatering by EOD stops after the DC power has been on for several minutes or hours; on interruption of their power and on short-circuiting of the electrodes, conditions can be created again for some further dewatering by DC power EOD. This discovery, of Rabie et al. is interpreted as a fuel cell effect and it is shown that it affords clues to several other electrochemical strategies for the possible enhancement of the efficiency of the EOD by DC power.

Further, the open circuit potentials observed by Rabie et al. (2) on the interruption of DC power are given an electrochemical interpretation which leads to quantitative estimates in agreement with the experimental values.     

Theory of a novel voltage-sustaining layer for power devices

The theory of a novel voltage-sustaining layer for power devices, called a Composite Buffer layer (CB-layer for short) is proposed. The CB-layer can be implemented in several ways, one particular implementation is used here, which consists of alternating n- and p-type regions, that are parallel to the direction of the applied electric field. In the off-state, the fields induced by the depletion charges of both region types compensate each other to allowing the doping in both n-regions and p-regions to be very high without causing a reduction of the breakdown voltage. In the onstate the heavy doping ensures the voltage drop is very low and that the saturation current density high. A simple relationship between the specific on-resistance and R_on and the sustaining voltage V_B can be shown to be R_on=2.53 × 10⁻⁷bV_B^1.23 ωcm², where the breadth b (in μm) of each region is much smaller than the thickness W. The design method of the CB-layer is discussed in some detail. The simulation results are shown to be in perfect agreement with the theory. The structure has application to a wide variety of different power devices. An RMOST structure has been used to demonstrate the benefits of the technique in the paper, for which excellent performance is demonstrated.     

A comparative study on the effect of VUV radiation in plasma SiOx-coated polyimide and polypropylene films

Wettability of polyimide (PI) and polypropylene (PP) films have been improved using SiO_x-like thin layers deposited from a mixture of hexamethyldisiloxane (HMDSO) and oxygen in a microwave distributed electron cyclotron resonance plasma reactor. The films wettability evolution behaviors were evaluated through the results of contact angle measurements, atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). The plasma depositions of SiO_x thin layers in presence of VUV radiation induce a contact angle decrease to about 7° and 35° for PI and PP films, respectively. XPS data showed that such difference in wettability is attributed to the increase of hydrophilic group's proportion at the surface of coated PI films due to VUV irradiation. AFM images showed that the PI surface topography remains relatively smooth when coated in presence of VUV radiation. However, in the case of PP films, AFM images revealed the growth of irregular structure due to a substrate etching effect supported by VUV radiation. For polymers coated without VUV irradiation, the deconvolution of the C1s peaks showed a significant decrease of CO bonds for both PI and PP substrates.     

CEMS AND COUPLING EFFECT OF INTERLAYERS IN MULTILAYERED FeSi/Si AMORPHOUS FILMS

Multilayered FeSi/Si amorphous films with fixed FeSi layer thickness and different Si layer thicknesses have been studied by conversion electron Mossbauer spectroscopy at room temperature. The results showed that with decreasing the Si layer thickness, the hyperfine field of samples increased and the thickness of interface dead layers arisen from the atomic interdiffusion effect decreased. These are due to the coupling effect between the magnetic layers. When the Si layers are thinner than 0.88 nm, the direction of the magnetization is out of the film plane.     

Growth and characterization of GaAs films deposited on Ge/Si composite substrates by metalorganic chemical vapor deposition

We report the results of studies which have been made on heteroepitaxial layers of GaAs and AlGaAs grown by metalorganic chemical vapor deposition on composite substrates that consist of four different types of heteroepitaxial layered structures of Ge and Ge-Si grown by molecular beam epitaxy on (100)-oriented Si substrates. It is found that of the four structures studied, the preferred composite substrate is a single layer of Ge ∼1 μm thick grown directly on a Si buffer layer. The double-crystal X-ray rocking curves of 2 μm thick GaAs films grown on such substrates have FWHM values as small as 168 arc sec. Transmission electron micrographs of these Ge/Si composite substrates has shown that the number of dislocations in the Ge heteroepitaxial layer can be greatly reduced by an anneal at about 750° C for 30 min which is simultaneously carried out during the growth of the GaAs layer. The quality of the GaAs layers grown on these composite substrates can be greatly improved by the use of a five-period GaAs-GaAsP strained-layer superlattice (SLS). Using the results of these studies, low-threshold optically pumped AlGaAs-GaAs DH laser structures have been grown by MOCVD on MBE Ge/Si composite substrates.