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1.
A new technique of EDM coring of single crystal silicon carbide (SiC) ingot was proposed in this paper. Currently single crystal SiC devices are still of high cost due to the high cost of bulk crystal SiC material and the difficulty in the fabrication process of SiC. In the manufacturing process of SiC ingot/wafer, localized cracks or defects occasionally occur due to thermal or mechanical causes resulted from fabrication processes which may waste the whole piece of material. To save the part of ingot without defects and maximize the material utilization, the authors proposed EDM coring method to cut out a no defect ingot from a larger diameter ingot which has localized defects. A special experimental setup was developed for EDM coring of SiC ingot in this study and its feasibility and machining performance were investigated. Meanwhile, in order to improve the machining rate, a novel multi-discharge EDM coring method by electrostatic induction feeding was established, which can realize multiple discharges in single pulse duration. Experimental results make it clear that EDM coring of SiC ingot can be carried out stably using the developed experimental setup. Taking advantage of the newly developed multi-discharge EDM method, both the machining speed and surface integrity can be improved.  相似文献   
2.
The capture of particles by charged droplets was simulated by considering the electrostatic interactions of droplet-droplet and droplet-particle. The results indicate that the electrostatic repulsion between droplets leads to a dynamic accumulation mode of particles. However, the droplet spacing has an insignificant effect on the capture efficiency when the electrostatic deposition predominates. The increase of droplet charge remarkably improves the capture efficiency, in which the capture of fine particles accounts for the largest proportion. Compared to the droplet charge, the droplet size shows a limited improvement in the capture efficiency. Reducing the droplet velocity prolongs the capture time instead of enhancing the capture capacity per unit time, thereby improving capture efficiency.  相似文献   
3.
清水沟中低品位磷矿性质复杂,嵌布粒度细,磨至-0.174mm 92.8%,通过振动—气流联合作用摩擦荷电,采用悬浮电选机经-粗-精-扫电选。可由含P2O5为24.47%的原矿获得含P2O5为30.23%。回收率为83.26%,杂质含量合格的磷精矿。  相似文献   
4.
Ignacio Rintoul 《Polymer》2005,46(13):4525-4532
A precise data set describing the kinetics of the free radical copolymerization of acrylamide/acrylic acid (AM/AA) in the range of low total monomer concentration as a function of the pH, total monomer concentration, initiator concentration, and comonomer ratio is presented. Strong impact on the reactivity ratios has been identified for the pH and total monomer concentration. Specifically, at constant total monomer concentration of 0.4 mol/l and T=313 K the reactivity ratio of AM increases from 0.54 at pH 1.8 to 3.04 at pH 12. Contrarily, the reactivity ratio of AA decreases from 1.48 to 0.32. The crossover occurs at pH≈4.2. Electrostatic effects due to the variation of the degree of ionization of AA are primarily suggested to influence the kinetics. When the total monomer concentration increases from 0.2 to 0.6 mol/l at constant pH=12, the reactivity ratios of AM and AA decrease from 4.01 to 2.13 and increase from 0.25 to 0.47, respectively. Reduction of electrostatic repulsion between the ionized monomer AA and partially charged growing polymer chain ends due to higher ionic strength at higher total monomer concentration serves as explanation of the effect. The precise data set is the prerequisite for a novel approach to calculate copolymer compositions in case of variable monomer reactivity.  相似文献   
5.
Schottky diodes of rare-earth, praseodymium (Pr)-doped and samarium (Sm)-doped furazano [3,4-b] piperazine (FP), sandwiched between Al and indium-tin oxide (ITO) were made by a spin-coating technique. The diodes, in which doped FP behaves as a p-type organic semiconductor, exhibit rectification behaviour. The p-type semiconductivity and rectification properties of the devices improve with rare-earth doping. The electrical effects observed in these devices are explained in terms of the p-type semiconducting behaviour of the doped FP thin films and the formation of a blocking contact (Schottky barrier) with the Al electrode and ohmic contact with the ITO electrode. Various electrical parameters such as carrier mobility, position of Fermi level, free carrier concentration, trap density, trap level and conductivity of doped FP are calculated and discussed. It is found that the position of the Fermi level shifts toward the valence band on rare-earth doping; concentration of free carriers and carrier mobility increase on doping. From the capacitance-voltage (C-V measurements, various electrical parameters such as barrier height, density of ionized acceptor atoms and depletion layer width are calculated and discussed. From the action spectra and absorption spectra it is confirmed that the Al-doped FP interface forms a Schottky barrier and the ITO-doped FP interface shows ohmic contact. The photovoltaic measurement on the two devices reveals that the short circuit current, open circuit voltage, fill factor and power conversion efficiency increase on rare-earth doping.  相似文献   
6.
文章详细分析了静电产生的机理,指出积聚静电电荷的多少与材料的电阻率和介电常数有关。讨论了静电火灾发生的条件,指出静电火灾的发生具有隐蔽性、复杂性和突发性。但只要对其规律进行深入地研究,可以找到有效地防止静电火灾发生的办法。  相似文献   
7.
We performed the first-principles calculation to investigate the electronic structure and polarization behaviors in PbTiO3/SrTiO3 (PST) superlattices. The DOS (density of state) profiles show that there are strong hybridizations of atom Ti–O and Pb–O which play very important roles on ferroelectricity of the PbTiO3/SrTiO3 superlattices. Comparing to the corresponding paraelectric phase, we find the electrons of the PT (PbTiO3) layers occupy lower energy states and electrons of the ST (SrTiO3) layer occupy higher energy states. It is shown that the polarizations of the superlattices decrease with proportion of SrTiO3 increasing. The constant polarization of local layer indicates that PST superlattices with small modulation lengthen can be approximately considered as a single ferroelectric material. Furthermore, according to electrostatic model, we find that directions of internal electric fields in PT and ST layers are opposite. In PST superlattices, internal electric field in PT layer leads to the loss of polarization of this layer, but the polarization of ST layer is induced by internal electric field of this layer. Compared to the value of the polarization in bulk PbTiO3, polarization of PST is smaller.  相似文献   
8.
本文主要是利用电子光学静电透镜原理,研究栅网对栅控电子枪的影响,以及如何消除这种影响。结果表明,理论分析的结果与实验相符,对实际栅控电子枪的设计具有一定的指导意义。  相似文献   
9.
介绍了粉末涂料的几种涂装方法及其原理、特点、应用范围和进展情况,重点介绍了静电粉末涂装方法。  相似文献   
10.
Bench-scale methods were utilized to determine changes in electrostatic charges and their mechanisms for various coarse and fine particles as they came into contact with each other and/or their containing vessel walls. Techniques included shaking tests and particle-copper plate contacting experiments. Electrostatic behaviour of coarse particles (glass beads and polyethylene) and fine particles (Larostat 519, glass beads and silver-coated glass beads) were investigated. Shaking tests resulted in charge separation in which the fine particles acquired significant positive charges, opposite to those carried by the large particles. In copper-plate contacting tests, charge transfer occurred between the fines and the copper plate with fines carrying away almost all of the initial charges on the plate followed by further charge separation. Charge separation was found to be the dominant charging mechanism between the coarse particle and copper plate, with the particles becoming negatively charged.  相似文献   
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