Efficient Flexible M-Tree Bulk Loading Using FastMap and Space-Filling Curves

Many database applications currently deal with objects in a metric space. Examples of such objects include unstructured multimedia objects and points of interest (POIs) in a road network. The M-tree is a dynamic index structure that facilitates an efficient search for objects in a metric space. Studies have been conducted on the bulk loading of large datasets in an M-tree. However, because previous algorithms involve excessive distance computations and disk accesses, they perform poorly in terms of their index construction and search capability. This study proposes two efficient M-tree bulk loading algorithms. Our algorithms minimize the number of distance computations and disk accesses using FastMap and a space-filling curve, thereby significantly improving the index construction and search performance. Our second algorithm is an extension of the first, and it incorporates a partitioning clustering technique and flexible node architecture to further improve the search performance. Through the use of various synthetic and real-world datasets, the experimental results demonstrated that our algorithms improved the index construction performance by up to three orders of magnitude and the search performance by up to 20.3 times over the previous algorithm.     

Effects of Cu on the corrosion behavior and microstructure of Mg–Zn–Ca bulk metallic glass

For the purpose of developing biodegradable magnesium alloys with suitable properties for biomedical applications, Mg–Zn–Ca–Cu metallic glasses were prepared by copper mold injection methods. In the present work, the effect of Cu doping on mechanical properties, corrosion behavior, and glass-forming ability of Mg₆₆Zn₃₀Ca₄ alloy was studied. The experimental findings demonstrated that the incorporation of Cu decreases the corrosion resistance of alloys, but increases the microhardness and degradation rate slightly. However, the addition of a trace amount of Cu can make the samples have antibacterial properties. Therefore, Mg–Zn–Ca–Cu has great advantages in clinical implantation and is the potential implant material.     

蛋类礼盒包装结构的缓冲性能研究

目的研究蛋类礼盒包装结构的缓冲性能。方法以蛋类尺寸为基础,建立可发性聚乙烯(expandable polyethylene. EPE)缓冲单元结构和组合结构,进行静态仿真分析和实验验证,比较结构在形状、叠合层数、组合形式等参数变化时的载荷与位移。结果结构层数变化相同时,单元结构的极限载荷从143N增加到236 N,组合结构的极限载荷从224 N增加到476 N,均呈近线性增长。结论蛋类礼盒包装中,组合结构的承载能力优于单元结构,通过单元结构的组合,可满足不同蛋类的包装要求。     

Control of the particle microstructure during the synthesis of bulk-polymerized transparent methacrylate-acrylonitrile-butadiene-styrene resin

A series of methacrylate-acrylonitrile-butadiene-styrene (MABS) resins was prepared using bulk polymerization. The polarity of the continuous phase and the compatibility of two phases were changed by adjusting the methyl methacrylate (MMA) content, choosing values that were close to styrene-butadiene rubber solubility value. The possibility of controlling the microstructure of the MABS resin by changing the polarity of the components and the compatibility of two phases was assessed. The dynamic mechanical analysis shows that the compatibility of two phases varies with the MMA content. The morphological analysis shows that increasing MMA contents results in a gradual decrease in the sub-inclusion structure with a network skeleton of rubber particles, and that all the particles become solid rubber when the MMA content reaches 75%. The sub-inclusion structure reappears but does not have a network skeleton when the MMA content is 90%. The impact strength and morphological analysis indicate that the solid rubber particles and the sub-inclusion structure with a network skeleton provide excellent toughness, while the sub-inclusion structure without a network skeleton does not. In contrast, the transmittance of the ABS resin first increased and then decreased with increasing MMA content.     

基于滑模的运载器主动段俯仰通道姿控系统设计

与传统比例-积分-微分（PID）控制方法相比，滑模控制（SMC）方法可以比较容易地将不确定性纳入控制器设计中，从而增强系统的鲁棒性。探索了SMC技术在运载器主动段姿态控制中的工程应用，首先通过分析基于趋近律的SMC系统，提出了降低不连续切换项系数的需求，然后研究了基于干扰上界的SMC方法。三通道小偏差仿真结果验证了两种方法的控制效果，表明第2种控制器的鲁棒性更好，稳态误差小，同时发动机喷管摆角需求较小。     

The influence of volume fraction of amorphous phase on corrosion resistance of Mg67Zn 29Ca 4 alloy

The aim of this study was to investigate the structure and corrosion resistance of amorphous, amorphous‐crystalline, and crystalline Mg₆₇Zn₂₉Ca₄ alloy for biodegradable applications. This paper presents a preparation method and results of the structural characterization and corrosion resistance analysis of the material. Samples were prepared in the form of 3 mm diameter rods. The structure of the alloy was examined with the use of X‐ray diffractometry and scanning electron microscopy. The thermal properties of the samples were examined with differential scanning calorimetry (DSC). Results of DSC analysis were used to determine heat treatment temperatures, allowing to obtain different fractures of crystalline phase in the material. Corrosion resistance of heat‐treated samples was investigated by immersion tests and electrochemical measurements performed in the simulated body fluid. The X‐ray diffraction results confirmed that the prepared Mg₆₇Zn₂₉Ca₄ alloy's structure is fully amorphous. After heat treatment, samples with different fractions of amorphous phase in the structure were obtained. Immersion tests of the samples showed that the structure significantly influenced corrosion resistance in examined materials. It should be pointed out, that certain amounts of crystalline phase in amorphous matrix can greatly improve the corrosion resistance of Mg₆₇Zn₂₉Ca₄ alloy.     

一类两性分枝过程条件均值增长率的极限性质

本文主要研究随机环境中配对依赖人口数两性 Galton-Watson 分枝过程的条件均值增长率的极限性质．利用上可加函数的性质，得到配对单元平均增长率的极限性质和该过程条件均值的上界和下界．文中给出了关于过程条件均值增长率的两个序列，利用配对单元平均增长率的性质，获得了这两个序列的极限性质．随机环境中配对依赖人口数两性分枝过程比较复杂，本文的结论推广了现有的研究成果．     

dU/dt引发的MOSFET误导通分析

分析了MOSFET误导通产生的原因,分别从原理和理论推导两个方面作了分析,主要考虑了开关管中寄生参数对开关特性的影响。通过求解误导通发生的条件,得到哪些参数会导致误触发,最后给出了仿真。文中还提出如何避免MOSFET误导通产生,以及改进方法,对减少实际应用中MOSFET破坏性损坏有一定意义。     

Fabrication of Schottky barrier MOSFETs using self-assembly CoSi2 nanopatterning and spacer gate technologies

A self-assembly patterning method for generation of epitaxial CoSi₂ nanostructures was used to fabricate 50 nm channel-length MOSFETs. The transistors have either a symmetric structure with Schottky source and drain or an asymmetric structure with n⁺-source and Schottky drain. The patterning technique is based on anisotropic diffusion of Co/Si atoms in a strain field during rapid thermal oxidation. The strain field is generated along the edges of a mask consisting of 20 nm SiO₂ and 300 nm Si₃N₄. During rapid thermal oxinitridation (RTON) of the masked silicide structure, a well-defined separation of the silicide layer forms along the edge of the mask. These highly uniform gaps define the channel region of the fabricated device. The separated silicide layers act as metal source and drain. A poly-Si spacer was used as the gate contact. The asymmetric transistor was fabricated by ion implantation into the unprotected CoSi₂ layer and a subsequent out-diffusion process to form the n⁺-source. I–V characteristics of both the symmetric and asymmetric transistor structures have been investigated.     

新结构MOSFET

和传统平面结构MOSFET相比，新结构MOSFET具有更好的性能(如改善的沟道效应(SCE)，理想的漏诱生势垒降低效应(DIBL)和亚阈值特性)和更大的驱动电流等。文章主要介绍了五种典型的新结构MOSFET，包括平面双栅MOSFET、FinFET、三栅MOSFET、环形栅MOSFET和竖直结构MOSFET。随着MOSFET向亚50nm等比例缩小，这些新结构器件将大有前途。