大水深测量校正方法研究与应用

水库水深测量精度直接关系到水库的防洪安全与蓄水兴利。现有回声测深仪无法应对大水深施测的情况，且测量受到水库水温分层影响。利用回声测深仪配合校正标进行大水深测量的校正方法，能够精确检测到回声测深仪水深测量的误差及差值、系统延时问题等，通过与各级校正标的真值比较、修正，能使测值近似真值,且使误差控制在容许范围内。介绍了水深校正标基本原理、操作方法和步骤以及在水库测深中的应用。     

大气探测红外分光辐射计Ⅱ型模样

报道了大气探测红外分光辐射计Ⅱ型(ASIS-2)模样,它具有20个通道,可以从卫星探测大气温度廓线和水汽垂直分布.它与美国TIROS-N/NOAA气象卫星上的高分辨率红外辐射探测仪(HIRS)相比,在光学、电子学和机械等方面都作了改进.其仪器灵敏度优于HIRS-1仪器,而与HIRS-2接近.它具有可增加2个红外通道和多个可见光通道的潜力.     

ASSM-Ⅱ型声学悬浮泥沙观测系统

本文介绍了一种新型的水文观测设备－“ＡＳＳＭ－Ⅱ型声学悬浮泥沙观测系统”，它可认自动，连续和长时间地实时观测水中悬浮泥沙深度分布和动态变化过程，文中介绍了工作原理框图，技术参数，性能特点及海上现场观测结果。     

前向反冲分析和非卢瑟福背散射

介绍了弹性散射分析中的另外两种分析方法——前向反冲分析和非卢瑟福背散射分析。前向反冲分析适用于材料中H和He同位素分析。高能质子和He离子背散射分析可提高对重基体中C,N和O等轻元素分析的灵敏度。给出了这两种分析方法的应用实例。     

电离层时域探测方法

给出了各向同性分层半空间等离子体对时域电磁脉冲后向散射的有关公式，得出了反抛物层时域响应的解析表达式，并利用时频分析方法演出了电子密度分布。     

Subsurface structures in initial stage of FeSi2 growth studied by high-resolution Rutherford backscattering spectroscopy

The initial stage of iron silicide formation is investigated by high-resolution Rutherford backscattering spectroscopy. During the Fe deposition on Si(001) at 470 °C, the formation of FeSi₂ is confirmed by the surface peak analysis. Initially, FeSi₂ grows epitaxially so that one of the major crystallographic axes is parallel to the <111> axis of the Si substrate. With increasing Fe deposition, the deviation between the major crystallographic axis of the silicide region and Si<111> increases although the electron diffraction pattern is independent of the amount of Fe deposition. Therefore, the subsurface crystallographic structure of iron silicide is transformed from a cubic-like to a low-symmetry structure.     

苏北及邻区前志留基础层的综合地球物理研究

在前新生代油气资源选区评价中，前志留面之下未变质沉积地层（简称前志留基础层）的分布具有重要的参考价值。从提高纵向分辨率的处理和反演技术的应用入手，结合约束条件,利用大地电磁测深数据反演,揭示前志留面等界面的埋深和分布；同时应用小波分析技术，从磁场中分解出区域磁异常，反演结晶基底的埋深。通过这2个界面埋深的差异来分析前志留基础层的分布     

Thermal stability of interfaces between metals and InP-based materials

The thermal stability of interfaces between metals (Ni, Pt, Ti, Mo) and III-V compound semiconductors has been investigated by the application of Rutherford backscattering spectrometry. Metal diffusion and interfacial lattice disorder of the semiconductors were analyzed for various metal/semiconductor samples annealed at temperatures up to 500°C. The interfaces of Ni/GaAs and Ti/GaAs were found to be more stable than those of Ni/In-based semiconductors and Ti/ In-based semiconductors, respectively. Faster diffusion of Pt atoms was ob-served in In-and As-containing materials than in P-containing materials. Mo/ semiconductor interfaces were the most stable.     

Fundamental solutions for half plane with an oblique edge crack

An elastic half plane with an oblique edge crack is considered in this paper. A pair of concentrated forces or point dislocations is assumed to act at an arbitrary point in the half plane. The half plane with an edge crack is first mapped into a unit circle by a rational mapping function so that the following analysis can be carried out on the mapped plane analytically. Then the complex stress functions are derived by separating the whole problem into two parts; one is the principal part corresponding to the infinite plane acted on by concentrated forces or dislocations, the other is the holomorphic part, which can be determined by making use of the property of regularity of complex stress functions. The stress intensity factors of the crack can be calculated with different inclined angles of the crack, and the displacement and stress components at an arbitrary position in the half plane can be expressed explicitly.     

Ion implantation doping of OMCVD grown GaN

Doping by ion implantation using Si, O, Mg, and Ca has been studied in single crystal semi-insulating and n-type GaN grown on a-sapphire substrates. The n-and p-type dopants used in this study are Si and O; Mg and Ca, respectively. Room temperature activation of Si and O donors has been achieved after 1150°C annealing for 120 s. The activation of Mg and Ca acceptors is too low to measure at both room temperature and 300°C. Using higher doses to achieve a measurable p-type conduction increases the amount of damage created by the implantation. Rutherford back scattering measurements on this material indicate that the damage is still present even after the maximum possible heat treatment. Secondary ion mass spectrometry measurements have indicated a redistribution in the measured profiles of Mg due to annealing.