3700系统死机问题之我见

本文从原理出发,对3700系统死机的根源进行了探索。作者认为,死机是由死循环造成的,且绝大多数死循环都与中断有关,而RACKO-TACKO菊花链及错误的返回地址则是引起死机的主要原因。通过对几个死机实例的详尽分折,作者也提出了寻找和分折死循环的一般性方法。     

荫罩黑化及DX气与煤气成分的探讨

本文介绍了彩色显像管荫罩黑化反应的机理,详细说明了DX气制气流程,以及DX气的成分对黑化膜品质的影响。计算分析了成分不同的煤气在制成DX气时的成分变化。同时还分析了黑化工艺和黑化设备对煤气成分波动的适应性,及在生产实践中改变DX气制气时的煤气空气对黑化膜质量的影响。     

Effect of local alloy disorder on the emission kinetics of deep donors (DX centers) in AlxGa1-xAs

In this paper we summarize our recent studies of the effects of local alloy disorder on the properties ofDX levels. A single emission rate is observed in GaAs where all Si-donors have identical local environments. In contrast, three discrete emission rates are observed in dilute AlGaAs alloys, suggesting that the group IV donor moves towards the interstitial site, thereby “selecting” three of the twelve surrounding group III atoms. We present evidence for an ordering of theDX levels consistent with Morgan’s model of a deepening potential well for theDX level as Al atoms are subsequently substituted for Ga atoms near the relaxed donor. These conclusions are consistent with earlier calculations of Chadi and Chang.     

Ohmic contact and transport properties of II–VI Green/Blue laser diodes

The employment of the Zn(Se,Te) pseudo-graded contacting scheme to p-type ZnSe-based alloys contributes directly to the recent demonstration of room temperature continuous-wave operation of II– VI green-blue laser diodes. Contact ohmicity is maintained down to cryogenic temperatures which enabled the investigation of electrical transport properties associated with the p-type nitrogen-doped ZnSe, Zn(S,Se), and (Zn,Mg)(S,Se). The observation of both persistent photoconductivity and a metastable population of holes which are in thermodynamic equilibrium with hydrogenic acceptors having reduced activation energy suggests the presence of a DX-like behavior for holes in p-type (Zn,Mg)(S,Se).     

不同肢长异型柱框架结构弹塑性时程分析

为提高异型柱框架结构的抗震性能，笔者利用DRAIN-2DX程序，对长肢、底层长肢异型柱框架以及普通异型柱框架分别进行了弹塑性时程地震反应计算，较系统地分析了肢长的变化对结构整体地震反应的影响，为合理确定长肢异型柱的设计参数提供了数值分析依据．得出增大薄弱层异型柱肢长能够显著提高异型柱框架结构的抗震性能的结论．底层长肢异型柱框架能有效地克服了普通异型柱框架底层的薄弱现象；各层层间位移分布更为均匀，有利于抗震；对控制各层位移比普通异型柱框架更为有效．     

Deep-level Transient Spectroscopy of GaAs/AlGaAs Multi-Quantum Wells Grown on (100) and (311)B GaAs Substrates

Si-doped GaAs/AlGaAs multi-quantum wells structures grown by molecular beam epitaxy on (100) and (311)B GaAs substrates have been studied by using conventional deep-level transient spectroscopy (DLTS) and high-resolution Laplace DLTS techniques. One dominant electron-emitting level is observed in the quantum wells structure grown on (100) plane whose activation energy varies from 0.47 to 1.3 eV as junction electric field varies from zero field (edge of the depletion region) to 4.7 × 10⁶ V/m. Two defect states with activation energies of 0.24 and 0.80 eV are detected in the structures grown on (311)B plane. The E_c-0.24 eV trap shows that its capture cross-section is strongly temperature dependent, whilst the other two traps show no such dependence. The value of the capture barrier energy of the trap at E_c-0.24 eV is 0.39 eV.     

DX桩及其在郑州地区的适用性分析

DX桩由于具有良好的桩—土间力学性能,在建设项目应用中取得了良好的效果。通过分析DX桩的桩—土间力学特点以及郑州地区的地质条件,采用理论分析和有限元数值仿真方法,分析DX桩在郑州地区的适用性,为DX桩在郑州地区的工程应用提供参考依据。     

2008版《电气简图用图形符号》系列国标的使用

配合2008版GB/T4728《电气简图用图形符号》系列国家标准,国家建筑标准设计图集修编完成了09DX001《建筑电气工程设计常用图形和文字符号》。介绍2008版国家标准中图形符号的特点和使用,以便于读者对国家标准和图集的使用和理解。     

唐山HTW电厂工程单节和两节DX挤扩灌注桩的试验研究

通过现场静荷载试验,对以粉细砂为承力盘和桩端持力层的单节和两节DX挤扩灌注桩的极限承载力进行判定,并分析其荷载传递机理,对这两种桩的侧阻力和端阻力的分配及其发展规律进行研究。     

基于OPC DX规范的双机热备份技术研究

介绍了基于OPC DX规范的双机热备份控制系统的设计和实现.着重讨论了系统结构设计以及主从服务器通信机制,分析了主从服务器数据同步的实现方案.