Ga-doped IZO films obtained by magnetron sputtering as transparent conductors for visible and solar applications

C-axis textured thin films of gallium-doped indium zinc oxide (GIZO) with a 2% ratio of Ga/Zn, were obtained via RF-magnetron sputtering with high transparency and electrical conductivity. A Box-Behnken response surface design was used to evaluate the effects of the deposition parameters (In₂O₃ target power, deposition time, and substrate temperature) on the chemical composition, optical, electrical, and structural properties of the GIZO films. The optical constants and the electrical properties were obtained using optical models. The GIZO stoichiometry, and therefore the In/Zn atomic ratio, affected the crystallinity, crystalline parameters, band gap, and charge carrier mobility of the GIZO films. The charge carrier density was related to the change in the crystalline parameters of the hexagonal structure and the In/Zn atomic ratio. The best electrical conductivity values (1.75?×?10³ Ω^?1 cm^?1) were obtained for GIZO films with In/Zn ratio ≥?1. Several figures of merit (FOM) defined for the visible and solar regions were comparatively used to select the optimal In/Zn atomic ratio that provided the best balance between the conductivity and the transparency. The optimal In/Zn ratio was in a range of 0.85–0.90 for the GIZO films.     

Thin‐film barriers using transparent conducting oxides for organic light‐emitting diodes

Abstract— This study covers thin‐film barriers using inorganic barriers of transparent conducting oxides (TCOs) such as zinc oxide (ZnO) and indium tin oxide (ITO). The TCOs were fabricated using a sputtering method with a process gas of pure argon at room temperature. ITO showed better properties as a barrier than the ZnO and exhibited the electronic performance necessary to perform additional functions. The ITO has superior barrier performance because it has a lower crack density due to its partial amorphous phase. For organic/inorganic multilayer barriers, the organic underlayer decreased the water‐vapor transmission rate (WVTR) more than the organic upper layer, indicating that the planarization effect was important in reducing the WVTRs. The results of this organic/ITO multilayer barrier study are expected to be useful in finding a practical solution to OLED encapsulation.     

The effects of glossy screens on the acceptance of flat‐panel displays

Abstract— The TCO requirements provide well‐known and recognized quality labels for displays. For these requirements to remain useful, they must continuously be reviewed and updated when necessary. The study described here was performed in response to the market trend of designing flat‐panel displays and notebooks with glare panels. The purpose of this study was to investigate subjective responses to display screens of different gloss levels for office workers working on different tasks under normal office‐lighting conditions. The study consisted of three parts, one where the users should set an acceptable reflex level, one where the user should rate their disturbance on a category scale, and one where the visual acuity of the users were investigated whether they were affected by glare or not. The results show that increasing gloss and increasing luminance levels had negative effects on the acceptance and the disturbance of reflexes. There were statistically significant differences in the acceptance and the disturbance levels between screens with low gloss and screens with high gloss, which suggests that screens with the highest gloss levels should be avoided. The study did not show an effect on the performance based on acuity testing.     

High quality transparent conductive ZnO/Ag/ZnO multilayer films deposited at room temperature

We have fabricated, by simultaneous DC and RF magnetron sputtering, multilayer transparent electrodes having much lower electrical resistance than the widely used transparent conductive oxide electrodes. The multilayer structure consists of three layers (ZnO/Ag/ZnO). Ag films with different film thickness were used as metallic layers. Optimum thicknesses of Ag and ZnO films were determined for high optical transmittance and good electrical conductivity. Several analytical tools such as spectrophotometer, atomic force microscopy, scanning electron microscopy and four-point probe were used to explore the possible changes in electrical and optical properties. A high quality transparent electrode, having resistance as low as 3 Ω/sq and high optical transmittance of 90% was obtained at room temperature and could be reproduced by controlling the preparation process parameters. The electrical and optical properties of ZnO/Ag/ZnO multilayers were determined mainly by the Ag film properties. The performance of the multilayers as transparent conducting materials was also compared using a figure of merit.     

A study of amorphous and crystalline phases in In2O3-10 wt.% ZnO thin films deposited by DC magnetron sputtering

We report on the processing, phase stability, and electronic transport properties of indium oxide (In₂O₃) doped with 10 wt.% zinc oxide (ZnO) deposited to a thickness of 100 nm using DC magnetron sputter deposition at room temperature and 350 °C. We compare the optimum oxygen content in the sputter gas for pure In₂O₃ and doped with (i) 10 wt.% ZnO and (ii) 9.8 wt.% SnO₂. Amorphous IZO films were annealed at 200 °C in air and N₂/H₂ and resistivity, Hall mobility, and carrier density along with molar volume change were monitored simultaneously as a function of time at temperature. We report that annealing the amorphous oxide in air at 200 °C does not lead to crystallization but does result in a 0.5% decrease in the amorphous phase molar volume and an associated drop in carrier density. Annealing in forming gas leads to an increase in carrier density and a small decrease in molar volume. We also report that when annealed in air at 500 °C, the amorphous IZO phase may crystallize either in the cubic bixbyite or in a recently observed rhombohedral phase.     

透明导电氧化物薄膜及其制备方法

综述了透明导电氧化物(TCO)薄膜的特性、应用及制备技术的发展,重点讨论了磁控溅射、脉冲激光沉积、溶胶-凝胶、喷射热分解等制备技术和柔性衬底TCO薄膜的制备状况、进展及发展趋势,并指出改进TCO薄膜制备技术的努力方向应体现完善薄膜性能、降低反应温度、提高控制精度、降低制备成本和适应集成化等趋势,而制备方法的选择则应根据薄膜的性能要求和不同的应用目的而不同.     

Development of transparent conducting copper and iron co-doped cadmium oxide films: Effect of annealing in hydrogen atmosphere

Hydrogenated (annealed in hydrogen atmosphere) cadmium oxide (CdO) thin films co-doped with iron (Fe) of different levels and fixed (2.5%) copper (Cu) amount were deposited on glass and silicon wafer substrates by thermal evaporation. The films were characterised with X-ray fluorescence, X-ray diffraction, optical spectroscopy, and dc-electrical measurements. The obtained results show important improvements in the conductivity, mobility, and carrier concentration compared to un-doped and non-hydrogenated CdO. Hydrogenated CdO doped with 2.5% Cu and 1.3% Fe improved the conductivity (2293.6 S/cm) by ~46 times, mobility (78.31 cm²/V s) by ~11 times, and carrier concentration (1.82×10²⁰ cm⁻³) by ~4 times. This suggests the possibility of using CdO:Cu:Fe–H as transparent-conducting-oxide and dilute-magnetic-semiconductor field of applications.     

Single-step process for transparent conductive ZnO:Ga films with uniform ultrahigh haze by oblique angle deposition

Increasing the haze of front electrodes of solar cells while retaining high optical transmittance is beneficial for increasing the power conversion efficiency. However, conventional methods of fabricating hazy films require additional etching steps or materials. Moreover, depositing large-area transparent conductive oxides with uniform ultrahigh haze is challenging. Here, we combine the oblique angle deposition and the atmospheric pressure plasma jet to produce GZO with a uniform ultrahigh haze of > 80% (non-uniformity ~1.35%), high transmittance of 88% (referenced to the substrate), and resistivity of 1.96 × 10^–3 Ω cm in a single step. We show that the high haze is caused by the “pre-deposition” of adsorbed particles on the bare substrate downstream and that the upstream dummy area should be avoided for high uniformity. Unlike existing methods, our method produces uniform films with ultrahigh haze and good transmittance in a single step without additional etching/ materials or changing parameters during operation.     

Efficiency loss prevention in monolithically integrated thin film solar cells by improved front contact

For thin film solar cells, there is a large gap between the record efficiencies and panel power output. It was found that for a “typical industrial” CIGS cell efficiency of 15.5%, the efficiency drops to 11.7% when it is operating under the circumstances of a monolithically integrated solar panel. Part of this gap is due to limited conductivity and transmittance of the front contact. By application of a metallic grid, the conductivity can be improved by over two order of magnitude at a transmittance loss of only a few percent as was shown experimentally. In addition, modeling was used to quantify the impact of such approach on the power output of monolithically integrated solar panels. This model includes optical and resistive losses, as well as related losses caused by the inhomogeneity of the operating voltage over the surface. Both power output and the different types of losses are mapped out for various cell configurations. Optimization of transparent conductive oxide resistance, cell length, finger width, and finger spacing of grids was performed and led to an efficiency improvement from 11.7% to 13.8% when the front contact is upgraded with a metallic grid consisting of 20 µm wide parallel fingers positioned perpendicular to the interconnect. Further optimization for a wide variety of cell and grid configurations show that for a technically more feasible size of 100 µm wide fingers, the calculated efficiency is still 13.5%. Finally, the power output is mapped out for a large number of configurations as to create an overview and insight in the interdependencies of cell configuration and finger dimensions. Copyright © 2014 John Wiley & Sons, Ltd.