钛酸铅微晶玻璃介电性能研究

主要对钛酸铅系铁电性微晶玻璃的介电性能做了研究,研制的微晶玻璃初始组成由形成主晶相的氧化物和形成玻璃相的氧化物构成,经过熔融、热处理可以得到以钛酸铅为主晶相的微晶玻璃,分析了不同组成情况下微晶玻璃的介电性能.     

钛酸钡陶瓷铁电临界尺寸的研究进展

钛酸钡是应用和研究最多的铁电体之一。本文从实验和理论上对钛酸钡铁电临界尺寸的研究进展进行了综述。     

Core-Shell Structures in ZrO2-Modified BaTiO3 Ceramic

Pure BaTiO₃ exhibits a paraelectric-to-ferroelectric phase transition at 130°C. When stoichiometric BaTiO₃ is combined with 10 mol% ZrO₂, the relative permittivity (ε) changes to a broad, relatively insignificant temperature dependence, and the Curie point, T _c , is not sharply defined. However, the transition sharpens at T = 95°C when these samples are sintered for a longer period of 60 h. SEM, EDAX analysis coupled with TEM observation gives three types of core-shell structures of different microstructural characteristics which are related to the diffuse phase transition. Chemical inhomogeneity, due to Zr⁴⁺ distribution in the core-shell structure, is proposed to account for the diffuse phase transition behavior.     

Sintering-driven effects on the band gap of (Pb,La)(Ti,Ni)O3 photovoltaic ceramics

In this work, the influence of the sintering temperature on the physical properties of (Pb_0.8La_0.2)(Ti_0.9Ni_0.1)O₃ (PLT-Ni) ceramics is reported. The experimental data revealed that the energy band gap of PLT-Ni ceramics could be tailored from approximately 2.7 to 2.0 eV by changing the sintering temperature from 1100°C to 1250°C. It is demonstrated that the simple substitution of Ti⁴⁺ by Ni²⁺ cations is effective to decrease the intrinsic band gap while increasing the tetragonality factor and the spontaneous polarization. However, the additional red-shift observed in the absorption edge of the PLT-Ni with increasing the sintering temperature was associated with a continuous increase in the oxygen vacancies () amount. It is believed that the impact of the creation of these thermally induced is manifold. The presence of and Ni²⁺ ions generate the Ni²⁺- defect-pairs that promoted both a decrease in the intrinsic band gap and an additional increase of the tetragonality factor, consequently, increasing the spontaneous polarization. The creation of Ni²⁺- defects also changed the local symmetry of Ni²⁺ ions from octahedral to a square pyramid, thus lifting the degeneracy of the Ni²⁺ 3d orbitals. With the increase in the sintering temperature, lower-energy absorbing intraband states were also formed due to an excess of , being responsible for an add-on shoulder in the absorption edge, extending the light absorption curve to longer wavelengths and leading to an additional absorption in “all investigated” spectrum as well.     

TEM Characterization of Single- and Multilayer Triol-Based Sol–Gel PZT (53/47) Thin Films

Integrated lead zirconate titanate thin films deposited on Pt/Ti/SiO₂/Si substrates using a novel triol-based route were characterized using X-ray diffraction and transmission electron microscopy. Crack-free single-layer PZT films of up to 200 nm thick were prepared by triol-based sol–gel processing onto Pt/Ti/SiO₂/Si substrates. Films ∼75 nm thick exhibited a microstructure free of pores and second phase. As film thickness increased, film texture changed from {100} to {111} perovskite. Essentially, single-phase multilayer films could be prepared by the deposition and pyrolysis of several 75 nm layers, followed by a single crystallization step. The influence of heat-treatment schedule on the microstructure and orientation of the multilayer films is discussed. Comparison has been made between multilayer films prepared using the triol-based sol and an inverted mixing order/acetic acid-based sol.     

The influence of oxygen vacancies on piezoelectricity in samarium-doped Pb(Mg1/3Nb2/3)O3-PbTiO3 ceramics

A study of 0.71Pb(Mg_1/3Nb_2/3)O₃-0.29PbTiO₃ shows that, when it is doped with 2.5% Sm on the A-site, in addition to an almost threefold increase in piezoelectric charge coefficient and dielectric permittivity, there is a 2 order of magnitude reduction in conductivity, attributed to a decrease in oxygen vacancy concentration. An analysis of the nonlinearity of permittivity with respect to field amplitude shows that both the reversible and irreversible contributions increase significantly with Sm-doping, with simple models showing that these changes are consistent with a reduction in the concentration of dipolar defects that can inhibit both polarization rotation and domain wall translation. Contrary to the argument that doping increases heterogeneity, there is little change in the diffuseness of the peak in permittivity as a function temperature, whilst there is a 15% increase in spontaneous polarization with Sm addition. Through comparison of the Rayleigh law parameters with those published for other piezoelectric materials, it is concluded that a significant contribution to the observed increase in piezoelectric performance due to Sm-doping of PMN-PT is similar in origin to that seen in soft, donor-doped PZT and other conventional piezoelectric ceramics.     

CeO2掺杂制备Ba0.9Ca0.1Ti1-xSnxO3压电陶瓷的结构及电性能

采用传统的陶瓷烧结技术,通过添加0.15%(摩尔分数)CeO2,在1120℃烧结2h,成功制备了新型无铅压电陶瓷Ba0.9 Ca0.1 Ti1-x Snx O3,并且检测了陶瓷样品的微结构和电性能.XRD显示所有陶瓷样品均具有纯的钙钛矿结构,在室温下为典型的四方相,SEM显示适量添加锡离子可以提高陶瓷致密性.在室温下,锡离子改性的BaTiO3基压电陶瓷在x=0.02处显示了优异的压电、介电和铁电性能(d33=276 pC/N,kp=46%,εr=3678,tanδ=2.4%,Pr=18.2μC/cm2,EC=1.12 kV/mm).这些优异的检测结果证实适当添加锡离子能改善BaT iO3基压电陶瓷的电性能.     

Pseudocapacitive Sodium Storage by Ferroelectric Sn2P2S6 with Layered Nanostructure

Sodium ion batteries (SIB) are considered promising alternative candidates for lithium ion batteries (LIB) because of the wide availability and low cost of sodium, therefore the development of alternative sodium storage materials with comparable performance to LIB is urgently desired. The sodium ions with larger sizes resist intercalation or alloying because of slow reaction kinetics. Most pseudocapacitive sodium storage materials are based on subtle nanomaterial engineering, which is difficult for large‐scale production. Here, ferroelectric Sn₂P₂S₆ with layered nanostructure is developed as sodium ion storage material. The ferroelectricity‐enhanced pseudocapacitance of sodium ion in the interlayer spacing makes the electrochemical reaction easier and faster, endowing the Sn₂P₂S₆ electrode with excellent rate capability and cycle stability. Furthermore, the facile solid state reaction synthesis and common electrode fabrication make the Sn₂P₂S₆ that becomes a promising anode material of SIB.     

在LaNiO_3衬底上（Pb,La）TiO_3铁电薄膜的制备和研究

首先通过金属有机化合物热分解（MOD）法在Si（100）基片上制备出LaNiO3（LNO）薄膜,再通过溶胶-凝胶（sol-gel）法,在LNO/Si（100）衬底上制备出（PbxLa1-x）TiO3（PLT）铁电薄膜。经XRD分析表明,LNO薄膜具有（100）择优取向的类钙钛矿结构,PLT/LNO/Si薄膜具有四方相钙钛矿结构,同时以（100）择优取向。最后对薄膜的介电性和铁电性进行了测试,发现薄膜介电常数适中,铁电性良好。