排序方式: 共有15条查询结果,搜索用时 31 毫秒
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Angel Uruea Monica Aleman Emanuele Cornagliotti Aashish Sharma Michael Haslinger Loic Tous Richard Russell Joachim John Filip Duerinckx Jozef Szlufcik 《Progress in Photovoltaics: Research and Applications》2016,24(8):1149-1156
We report on the progress of imec's n‐type passivated emitter, rear totally diffused rear junction silicon solar cells. Selective laser doping has been introduced in the flow, allowing the implementation of a shallow diffused front surface field and a reduction of the recombination current in the contact area. Simplifications have been implemented towards a more industrial annealing sequence, by replacing expensive forming gas annealing steps with a belt furnace annealing. By applying these improvements, together with an advanced texturing process and emitter passivation by atomic layer deposition of Al2O3, 22.5% efficient cells (three busbars) have been realized on commercial 156 · 156 mm2 Czochralski‐Si. This result has been independently confirmed by ISE CalLab. Copyright © 2016 John Wiley & Sons, Ltd. 相似文献
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Abderrahmane Belghachi Abderrachid Helmaoui Ali Cheknane 《Progress in Photovoltaics: Research and Applications》2010,18(2):79-82
The reduction of surface recombination in GaAs solar cells is known to be a major concern for photovoltaic cells designers. A common technique used to reduce this effect is to cover the GaAs surface with a wide band gap window layer, therefore the creation of a heterojunction. To avoid a heterojunction with its inconveniences; interface surface states, poor photon absorption in addition to the technological exigencies, one can use an all‐GaAs solar cell. In this type of structure, a thin highly doped layer is created at the surface known as a front surface field (FSF). The main role of an FSF layer is to reduce the effect of front surface recombination and the enhancement of light‐generated free carriers' collection. This is achieved by the drastic reduction of the effective recombination at the emitter upper boundary. In this work, a simple analytical model is used to simulate the influence of the FSF layer on GaAs solar cell parameters; photocurrent, open circuit voltage and energy conversion efficiency. The effects of the FSF layer doping density and its thickness on the cell performance are discussed by using computed results. Copyright © 2010 John Wiley & Sons, Ltd. 相似文献
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The importance and necessity of emulating the federation load during simulating was analyzed firstly. Then, the special federation load emulation tool, federation load simulator ( FLS ), was designed and implemented, by which all of the vital essential characteristics of a simulation could be tested, e. g. the amount of federates, the joint/resigned speed of federate, the amount of object instances, the registered/deleted speed of instance in one single program, etc.. The applications proved that FLS could provide a convenient, effective and adjustable simulation load testing environment during the procedure of run-time infrastructure(RTI) and interrelated tool federates researching, developing and performance testing. Furthermore, the FLS utilized all kinds of resources with high efficiency. 相似文献
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交流电弧炉电极控制系统是一个多变量、非线性、参数时变、复杂强耦合系统,经典的控制策略难以获得优良的性能.为此从安钢FSF电极控制的实际应用出发,提出了1种变结构遗传Elman网络预测建模方法,其中改进的混和遗传算法用来对网络结构和权值及自反馈增益的同步动态寻优.并将基于BP算法的改进Elman网络和本文提出的变结构遗传Elman网络都应用于交流电弧炉的电极模型的辨识中,通过基于安钢现场数据的计算机仿真实验表明:变结构遗传Elman网络克服了因复杂的辨识对象造成的网络辨识结构复杂问题和采用BP算法带来的权值训练缺陷;并具有更好的动态性能,逼近速度快,精度更高等优点.最后,把建立的模型应用于电极控制系统的参数整定上,取得了良好的控制效果,为电极控制提供了理论指导. 相似文献
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An engineered infilled frame: Behavior and calibration 总被引:2,自引:0,他引:2
The results of an experimental investigation on some engineered infilled frames with high ductility and adjustable strength are presented in this paper. To achieve an engineered infilled frame, an element is added to the infill, called Frictional Sliding Fuses (FSFs). The fuse acts before infill corner crushing and controls the infill so that it is not overloaded. Consequently, it increases the deformation capacity and decreases the strength deterioration. An FSF has a frictional nature, based on which the infill has more appropriate hysteresis cycles, leading to more structural energy damping during earthquakes. The results show that the engineered infilled frames have adjustable strength, as well as high ductility and damping. 相似文献
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《Progress in Photovoltaics: Research and Applications》2017,25(6):452-469
Interdigitated back contact (IBC) crystalline silicon (c‐Si) solar cells are attracting a lot of attention because of their capability to reach world record conversion efficiency. Because of the relatively complex contact pattern, their design and optimization typically require advanced numerical simulation tools. In this work, a TCAD‐based simulation platform has been developed to account accurately and in detail the optical and passivation mechanisms of front texturization. Its validation has been carried out with respect to a novel homo‐junction IBC c‐Si solar cell based on ion implantation and epitaxial growth, comparing measured and simulated reflectance, transmittance, internal quantum efficiency, external quantum efficiency spectra, and current density–voltage characteristics. As a result of the calibration process, the opto‐electrical losses of the investigated device have been identified quantitatively and qualitatively. Then, an optimization study about the optimal front surface field (FSF) doping, front‐side texturing morphology, and rear side geometry has been performed. The proposed simulation platform can be potentially deployed to model other solar cell architectures than homo‐junction IBC devices (e.g., passivated emitter rear cell, passivated emitter rear locally diffused cell, hetero‐IBC cell). Simulation results show that a not‐smoothed pyramid‐textured front interface and an optimal FSF doping are mandatory to minimize both the optical and the recombination losses in the considered IBC cell and, consequently, to maximize the conversion efficiency. Similarly, it has been showed that recombination losses are affected more by the doping profile rather than the surface smoothing. Moreover, the performed investigation reveals that the optimal FSF doping is almost independent from the front texturing morphology and FSF passivation quality. According to this result, it has been demonstrated that an IBC cell featuring an optimal FSF doping does not exhibit a significant efficiency improvement when the FSF passivation quality strongly improves, proving that IBC cell designs based on low‐doped FSF require a very outstanding passivation quality to be competitive. Deploying an optimization algorithm, the adoption of an optimized rear side geometry can potentially lead to an efficiency improvement of about 1%abs as compared with the reference IBC solar cell. Further, by improving both emitter and c‐Si bulk quality, a 22.84% efficient solar cell for 280‐μm thick c‐Si bulk was simulated. Copyright © 2017 John Wiley & Sons, Ltd. 相似文献