多层核壳CuInS_2/ZnS量子点的有机相合成的研究

有机相反应体系中合成制备CuInS2量子点核壳结构,并对制备出的核以及核壳结构的材料进行表征。XRD结果显示成功合成纯度高、晶形较好的CIS量子点;通过TEM可以观察到量子点形貌以及尺寸的变化;荧光光谱和吸收光谱则清楚表明在反应过程中红移和蓝移情况以及量子效率的明显增加;最后,由光稳定性实验得出包覆了ZnS的CIS量子点稳定性得到提高。     

Effects of photo-assisted electrodeposited on CuInSe2 thin films

Photo-assisted one-step electrodeposition has been applied to help in forming smooth and dense CuInSe₂ films. The difference in surface morphology and crystalline quality between CuInSe₂ films with various photo-assistance has been investigated. In the photo-assisted electrodeposition process, the many kinds of lamps providing maximum light intensity at about 380 to 620 nm were used as light source to be irradiated onto the surface of Mo-coated soda-lime glass substrates. The results suggested effects of photo-assistance including activating surface diffusion and growing high-crystalline quality films with reduced defects during electrodeposition.     

基于IEC 61970标准的多控制中心间无功电压协调控制信息交互模型设计

标准化是未来控制中心信息交互的发展方向。基于IEC 61970标准,提出一种适用于多控制中心间无功电压协调控制(coordinated automatic voltage control,CAVC)的信息交互模型。首先分析CAVC信息流内容,给出用于信息交互的协调控制模型定义;对公用信息模型进行扩展,设计出CAVC标准化信息模型;基于组件接口规范,设计CAVC标准化信息交互接口,并给出其信息交互框架和信息交互数据流程;该信息交互模型在实现智能电网条件下CAVC的多控制中心间信息交互方面具有广阔的应用前景。     

高层大跨度联体钢构吊装及变形控制施工技术

通过实例分析在受地域限制及地面承载限制、大型起重机无法到位、而中小型汽车吊又无法满足起升高度及安装重量等要求的特殊情况下,采用桅杆吊装法成功解决施工难题,同时降低工程造价,为类似工程在特定情况下的施工提供了宝贵的借鉴经验。     

指挥信息系统作战运用效能评估指导模式研究

针对指挥信息系统作战运用效能如何评估更加有效的问题,提出由评估内涵、评估要素和评估流程构成的指挥信息系统作战运用效能评估指导模式.论述指挥信息系统作战运用效能评估指导模式,给出基于群组AHP和模糊综合评判法进行作战运用效能评估的具体方案.实践结果表明:该模式可行、实用,可为总部和部队今后开展指挥信息系统作战运用效能评估提供借鉴.     

CIS(CIGS)薄膜材料的研究进展

以CIS(CIGS)作为吸收层的太阳能电池因其诸多优异性能而成为最具潜力的第三代太阳能电池.首先介绍了CIS(CIGS)薄膜的性能与掺杂对电池的影响,讨论了多种薄膜沉积技术及其优缺点,重点介绍了几种低成本制备技术及其影响因素,最后阐述了CIS(CIGS)薄膜电池的发展情况,并展望了CIS(CIGS)电池的发展趋势.     

CIS片上系统中伽玛校正的低功耗设计

为了实现CMOS图像传感器(CIS)片上系统(SoC)中伽玛(γ)校正的低功耗设计,同时又保证校正的精度,提出一种查找表和直线拟合相结合的γ校正技术。算法对灰度值较低的像素使用直接查找表方法校正,对于γ曲线上升缓慢部分的像素采用分段直线拟合的方法。在直线分段时,使用外层分段与内层分段相结合的方法,达到了分段优化的目的。算法保证了图像校正精度,与使用完全查找表法相比,误差在0.5 pixel之内。基于该方法设计了一个8 bit输入/8 bit输出的VLSI模块,通过FPGA对模块进行了验证,模块占用723个LE和195个LC寄存器,比完全查找表法减少了硬件资源耗费,实现了低功耗设计。系统最大工作频率可达148 MHz,完全满足实时处理的需求。     

Second generation CIS solar modules

Multinary Cu(In,Ga)(Se,S)₂ absorbers (abrev. CIGSSe) are promising candidates for reducing the cost of photovoltaics well below the cost of crystalline silicon. Shell Solar has pioneered production of this new thin film technology and is now with the first generation at a volume of well over 1 MW/year. In a separate pilot line for second generation products we have further improved the performance of CIGSSE based solar modules. We developed a novel CIGSSE formation technique called stacked elemental layer rapid thermal processing (SEL-RTP). This process has recently been scaled up from initial laboratory sized mini-modules (10 × 10 cm²) to full sized power modules of 60 × 90 cm². The present paper concentrates on in situ and ex situ characterization techniques that were developed to control and further improve large area CIGSSE processing. The crystalline thin film formation process has been analyzed with in situ thin film calorimetry and in situ X-ray diffraction (XRD). That work has added fundamental insights and accelerates the optimization process. The depth distribution of gallium and sulfur has been determined by secondary ion mass spectroscopy (SIMS) for different selenization and sulfurization processes. Appropriate profiles of these elements allow for a deliberate bandgap profiling within the Cu(In,Ga)(S,Se)₂ absorber. In addition further quality control tools like X-ray fluorescence analysis and Raman spectroscopy for stoichiometry monitoring, photoluminescence lifetime mapping and thermographic imaging have been developed in order to improve large area uniformity and reproducibility.

Some first full sized modules from the new pilot line look very promising: Aperture area efficiencies of up to 13.1% for monolithic thin film circuits on 0.54 m² and a module power of 65 W represent an international champion value for large are thin film solar modules.     

Effect of proton irradiation on electrical properties of CuInSe2 thin films

High-energy proton irradiation (380 keV and 1 MeV) on the electrical properties of CuInSe₂ (CIS) thin films has been investigated. The samples were epitaxially grown on GaAs (0 0 1) substrates by Radio Frequency sputtering. As the proton fluence exceeded 1×10¹³ cm⁻², the carrier concentration and mobility of the CIS thin films were decreased. The carrier removal rate with proton fluence was estimated to be about 1000 cm⁻¹. The electrical properties of CIS thin films before and after irradiation were studied between 80 and 300 K. From the temperature dependence of the carrier concentration in CIS thin films, we found N_D=9.5×10¹⁶ cm⁻³, N_A=3.7×10¹⁶ cm⁻³ and E_D=21 meV from the fitting to the experimental data on the basis of the charge balance equation. After irradiation, a defect level was created, and N_T=1×10¹⁷ cm⁻³ for a fluence of 3×10¹³ cm⁻², N_T=5.7×10¹⁷ cm⁻³ for a fluence of 1×10¹⁴ cm⁻² and E_T=95 meV were also obtained from the same fitting. The new defect, which acted as an electron trap, was due to proton irradiation, and the defect density was increased with proton fluence.     

基于离子淌度质谱技术的离子光谱研究进展

离子光谱结合了质谱的高灵敏度和光谱的分子结构特异性的优势,可对蛋白质、多肽、糖类、寡核苷酸等复杂体系进行结构表征和鉴定。但当存在同分异构体时,离子光谱难以从叠加的谱图中得到单个异构体的光谱信息。离子淌度质谱技术可通过区分待测离子质荷比和分子空间尺寸差异来实现异构体的分离。离子淌度可以对异构体分离后分别引入到后续的光谱和质谱分析中,减少了由异构体引起的光谱叠加问题,光谱可以进一步验证离子淌度的分离效果,因此质谱、光谱、离子淌度谱的有机结合在得到异构体精确光谱的同时,也为离子淌度质谱分析带来了新的维度和深度。本文概述了近20年来基于各类离子淌度质谱技术的光谱仪器发展和应用情况,总结目前存在的问题,并展望多维度结构质谱的新需求。