基于LCP径向偏振光输出的掺镱MOPA脉冲光纤激光器

为实现光纤激光器径向偏振光的高效输出,提出并搭建了基于液晶聚合物(LCP)的纳秒脉冲掺镱(Yb)主振荡器功率放大(MOPA)系统。该系统采用空间相位转换法,利用LCP涡旋半波片将全光纤MOPA激光器输出的高峰值功率、窄线宽、线偏振、高斯形分布的纳秒脉冲信号转换为横向强度呈空心环状分布的拉盖尔-高斯光。MOPA激光器系统由窄线宽连续种子源、电光强度调制器和后续的5级YDF放大器组成,通过实验获得了20.1 W的稳定LP01模输出。而后的LCP涡旋波片用作空间模式转换器,最终获得的平均输出功率为19.5 W,脉宽为10 ns,重复频率为10 kHz,横向剖面呈规则空心环形的径向偏振光输出,模式转换效率可达97%。另外,通过PBS测量法测得径向偏振光的模式纯度约为88.5%,兼具高功率与高纯度的优势。     

Dispersive optical constants and electrical properties of nanocrystalline CuInS2 thin films prepared by chemical spray pyrolysis

Nanocrystalline CuInS₂ thin films were deposited on borosilicate glass substrates via chemical spray pyrolysis method. The structural, morphological, optical, and electrical properties were studied as a function of increasing annealing temperature from 250 to 350 ̊C. XRD analysis showed mixed phases at lower temperatures with the preferred orientation shifting towards the (112) chalcopyrite CuInS₂ plane at higher substrate temperature. The crystallite size increased slightly between 13 and 18 nm with increase in annealing temperature. The optical band gap was determined on basis of Tauc extrapolation method and the Wemple–Di-Domenico single oscillator model. Possible structural and quantum confinement effect may have resulted in relatively larger band gaps of 1.67–2.04 eV, relative to the bulk value of 1.5 eV. The presence of Cu_xS in the as-deposited and wurtzite peaks after annealing at 350 ^̊C play a role in influencing the optical and electrical properties of CuInS₂ thin films.     

Large oscillator strength excitons in PbGa2S4 crystals

Exciton states with a large oscillator strength (transverse-longitudinal splitting of 50 meV) and binding energy of 290 meV have been observed in PbGa₂S₄ crystals. The ground exciton states are stable up to the room temperature. The ground (n = 1) exciton state and two excited (n = 2 and n = 3) states of the short-wavelength B-excitons series were observed at low temperature (T = 10 K). The ground (n = 1) and the excited (n = 2) states of the long-wavelength A-exciton series were also revealed. The exciton Bohr radius of the ground exciton state was determined to be 70 Å for the A-exciton and 10 Å for the B-exciton. The band splitting and the main parameters of excitons have been determined from the calculation of the reflectivity spectra contours. The group theory analysis of the band symmetry was performed and the scheme of bands responsible for exciton transitions in the center of the Brillouin zone was proposed.     

直传式加热型振荡器的设计与应用

在对现有的医用无加热功能的振荡器进行研究后,创新设计了一种直传式加热型振荡器。阐述了恒温振荡装置的工作原理,设计了装置的机械结构和控制电路,主要是将加热部件直接连接在容器固定盘上,通过加热、调温电路设置来实现加热、控温、控时等功能;解决了现有加热型振荡器价格昂贵、机构复杂、传热性差的问题,节约了制造成本,并能保证良好的使用效果,已获实用新型专利,产品已经填补国内市场的空白。     

一种基于分频链的时钟校准方法

针对晶体振荡器的温漂特性,设计了一种基于分频链的时钟校准算法。在不改变晶体振荡器的情况下可调节时钟频率,校准精度达±0.25ppm,校准范围±32ppm,通过多次实验分析,用Verilog-HDL语言编写全部模块,在modelsim6.2b软件中实现模块仿真。全部功能正常实现,符合设计要求。     

Synaptic plasticity based model for epileptic seizures

In this paper, a new dynamic model describing the epileptic seizure initiation through transition from interictal to ictal state in a brain predisposed to epilepsy is suggested. The model follows Freeman’s approach where the brain is viewed as a network of interconnected oscillators. The proposed nonlinear model is experimentally motivated and relies on changes in synaptic strength in response to excitatory spikes. This model exhibits a threshold beyond which a bifurcation toward a short-term plasticity state occurs leading to seizure onset. A resulting explanatory assumption is that when considering epilepsy, brain regions are characterized by abnormally low thresholds toward short-term synaptic plasticity. It is shown by simulation that the proposed model enables some experimentally observed qualitative features to be reproduced. Moreover, a preliminary discussion on the impact of the underlying assumptions on the fundamental issue of seizure control is proposed through an EEG based feedback control scheme.     

Oscillator strengths of allowed transitions for O III

The electric dipole oscillator strengths for lines in O III between some singlet and triplet levels have been calculated using the weakest bound electron potential model theory and the quantum defect orbital theory. In the calculations, both multiplet and fine-structure transitions are studied. The calculated oscillator strengths have been compared with available theoretical and experimental results. Good agreement with results in the literature has been obtained.     

一种带有开关电流源的低相噪压控振荡器

提出一种带有开关电流源的电感电容压控振荡器（LC VCO）。该技术通过反馈电容将电感电容压控振荡器的输出耦合到电流源,形成了电流源的开关特性,从而减小了电感电容压控振荡器的相位噪声。提出的电感电容压控振荡器采用华虹 NEC的0.18μm SiGe BiCMOS工艺,工作频率为5.7 GHz,相位噪声为-113.0 dBc/Hz@1MHz,功耗为2.3 mA。在其他性能相同的情况下,提出的电感电容压控振荡器的振荡频率比典型的电感电容压控振荡器的相位噪声小4.5 dB。     

340 GHz返波振荡器输能窗的设计与实验

为340 GHz 返波振荡器设计了输能窗,并对其进行了设计分析及仿真模拟计算.计算结果表明,该窗在327 GHz-347 GHz 频段内的反射系数优于30 dB.对窗片进行金属化,焊接输能窗,封接出气密性良好的输能窗,对输能窗进行测试.测试结果表明,该窗在333 GHz-367 GHz频段内反射系数优于10 dB,其中,在336 GHz-344 GHz 频段内优于15 dB,传输损耗7 dB 左右.对模拟结果与实测结果的偏差进行了分析,为进一步优化输能窗奠定基础.     

微带压控振荡器设计与仿真

介绍了S波段微带压控振荡器的设计方法,并使用微波仿真软件Serenade8.5对振荡器进行仿真分析,给出了仿真和实际电路的结果。