Oxidation behavior and high-temperature flexural property of CVD-SiC-coated PIP-C/SiC composites

Polymer infiltration pyrolysis (PIP) was used to prepare carbon fiber-reinforced silicon carbide (C/SiC) composites, and chemical vapor deposition (CVD) was employed to fabricate SiC coating. The oxidation behavior at 1700?°C and the flexural property at 1200?°C were tested. SiC coating exerted remarkable oxidation effects on PIP-C/SiC composites. In the absence of coating, PIP-C/SiC composites lost 29.2% of its mass, with merely 6.74% of the original flexural strength retained. In contrast, CVD-SiC coated PIP-C/SiC composites had the mass loss of 10.2% and the flexural strength retention ratio of 23.4%. In high-temperature tests, SiC coating played an important role in the flexural strength of PIP-C/SiC composites. The flexural strength of uncoated composites became 330.7?MPa, and that of coated ones reduced from 655.3 to 531.2?MPa.     

CVD金刚石表面增透膜的研究进展

CVD金刚石膜因特有的物理化学性质，具有发展成为新一代光学材料的前景。但由于CVD金刚石膜自身局限性导致其理论透过率不到71%，在金刚石膜表面镀制增透膜，通过改变增透膜组成成分、显微组织和晶体结构，可有效地改善CVD金刚石膜自身理论透过率的问题。首先，介绍了CVD金刚石表面镀制单层增透膜增透原理，并总结了物理和化学气相沉积技术制备增透膜的优缺点。然后，重点综述了近年来CVD金刚石表面氮化物、金属氧化物和稀土金属氧化物等增透膜材料的研究进展，详细分析了增透膜制备参数、热处理工艺、衬底表面改性和掺杂工艺对增透膜整体组织和性能影响的规律。其中优化增透膜沉积温度、氧分压和热处理等工艺参数，是通过改变增透膜微观组织形貌以及晶体结构来提高其光学透过性能，而改变衬底表面结构能够通过改变增透膜与基体之间的成键方式来提升界面结合能力，而稀土元素掺杂方式是通过改变增透膜化学组成成分来改善增透膜的光学透过性能，并指出掺杂元素成型机理和影响机制。最后，展望了未来CVD金刚石表面增透膜的发展方向。     

Role of oxygen in surface kinetics of SiO2 growth on single crystal SiC at elevated temperatures

Understanding surface kinetics of SiO₂ growth on single crystal SiC at elevated temperatures is crucial to fabricate high-performance SiC-based devices. However, the role of oxygen in the evolution mechanism of SiC surface at atomic scale has not been comprehensively elaborated. Here, we reveal the manipulation effect of oxygen on the competitive growth of thermal oxidation SiO₂ (TO-SiO₂) and thermal chemical vapor deposition SiO₂ (TCVD-SiO₂) on the 4H-SiC substrate at 1500 °C. TO-SiO₂ is formed by the thermal oxidation of SiC, in which the substrate undergoes layer-by-layer oxidation, resulting in an atomically flat SiC/TO-SiO₂ interface. TCVD-SiO₂ growth includes the sublimation of Si atoms, the reaction between sublimated Si atoms and reactive oxygen, and the adsorption of gaseous Si_xO_y species. A relatively high sublimation rate of Si atoms at SiC atomic steps causes the transverse evolution of the nucleation sites, leading to the formation of nonuniform micron-sized pits at the SiC/TCVD-SiO₂ interface. The low oxygen concentration favors TCVD-SiO₂ growth, whose crystal quality is much better than that of TO-SiO₂ due to the high surface mobility in the thermal CVD process. We further achieve the epitaxial growth of graphene on 4H-SiC in an almost oxygen-free reaction atmosphere. Additionally, ReaxFF reactive molecular dynamic simulation results illustrate that the decrease in oxygen concentration can promote the growth kinetics of SiO₂ on single crystal SiC from being dominated by thermal oxidation to being dominated by thermal CVD.     

Ir/HfO2复合涂层的制备及性能研究

利用化学气相沉积(CVD)技术制备了HfO2涂层和Ir/HfO2复合涂层,采用金相显微镜(OM)、扫描电镜(SEM)、电子探针(EPMA)对涂层的性能进行分析。结果表明:在沉积Ir时,沉积室升温速率≤10 ℃/min时,制备出的Ir/HfO2复合涂层经真空高温热处理后可获得表面质量良好的Ir层,且Ir层纯度达到99.77%;真空热处理有益于提高Ir/HfO2复合涂层之间的结合程度,且热处理温度越高,结合效果越好;表面制备有HfO2涂层的Ir棒在1980 ℃氧化10 h的条件下,HfO2涂层对Ir的保护效果显著,可将Ir的氧化深度由毫米级降至数十微米。     

Is the association between temperature and mortality modified by age, gender and socio-economic status?

Background

A number of studies have examined the relationship between high ambient temperature and mortality. Recently, concern has arisen about whether this relationship is modified by socio-demographic factors. However, data for this type of study is relatively scarce in subtropical/tropical regions where people are well accustomed to warm temperatures.

Objective

To investigate whether the relationship between daily mean temperature and daily all-cause mortality is modified by age, gender and socio-economic status (SES) in Brisbane, Australia.

Methods

We obtained daily mean temperature and all-cause mortality data for Brisbane, Australia during 1996-2004. A generalised additive model was fitted to assess the percentage increase in all deaths with every one degree increment above the threshold temperature. Different age, gender and SES groups were included in the model as categorical variables and their modification effects were estimated separately.

Results

A total of 53,316 non-external deaths were included during the study period. There was a clear increasing trend in the harmful effect of high temperature on mortality with age. The effect estimate among women was more than 20 times that among men. We did not find an SES effect on the percent increase associated with temperature.

Conclusions

The effects of high temperature on all deaths were modified by age and gender but not by SES in Brisbane, Australia.     

金属陶瓷及硬质合金表面CVD/PVD涂层的摩擦与切削性能

为研究涂层沉积方式对金属陶瓷和硬质合金性能的影响,采用粉末冶金技术制备了Ti(C,N)基金属陶瓷和YT15硬质合金,在基体表面先后采用CVD和PVD制备涂层。采用SEM、EDS等手段对涂层的微观组织和元素含量进行分析,并对涂层试样进行划痕、摩擦因数、切削性能检测。结果表明,通过复合CVD+PVD工艺,CVD涂层和PVD涂层结合良好。不论是金属陶瓷还是硬质合金,CVD涂层的膜基结合力和摩擦因数均为最大,PVD涂层最小,复合CVD+PVD涂层介于两者之间。对于金属陶瓷和硬质合金而言,复合CVD+PVD涂层的切削性能最好,CVD涂层最差,PVD涂层介于两者之间。切削过程中的磨损机理主要是氧化磨损和磨粒磨损。     

镁合金表面沉积铜钨复合涂层工艺及涂层性能研究

目的提高镁合金表面的耐蚀耐磨性。方法采用冷喷涂与化学气相沉积(CVD)相结合的方法在镁合金表面制备出Cu/W复合涂层,并对复合涂层的结构、成分、组织形貌、耐磨性、耐蚀性、结合力进行分析。结果镁合金基体沉积Cu/W复合涂层后,表面硬度提高了687.1HV,磨损率从0.032%降到0.020%,腐蚀电位正移了1.3 V,临界载荷相比直接化学气相沉积W涂层提高了120.5 N。结论Cu/W复合涂层显著提高了镁基体的耐磨、耐蚀性,涂层与基体结合力较高。     

Effects of Growth Parameters on the Morphology of CNTs/Cu Composite Powder Prepared Using Cr/Cu Catalyst by Chemical Vapor Deposition

采用化学共沉淀法制备了Cr/Cu复合粉体催化剂,并用化学气象沉淀法（CVD）原位合成CNTs/Cu复合粉末。利用SEM, TEM和Raman光谱分别对其微观形貌和结构进行表征。结果表明：采用化学气相沉淀法,使用10 wt%Cr/Cu 的催化剂,在混合气体(Ar/H2/C2H4) 流量2450/300 mL/min下,于1073 K 温度生长30 min,可以得到优质、结晶良好的 CNTs/Cu 复合粉末     

碳纤维复合材料专用CVD金刚石涂层刀具的制备及试验研究

碳纤维增强复合材料(简称碳纤维复合材料)是以石墨纤维或碳纤维为增强材料的复合材料,具有耐磨性好、耐高温、强度高、密度小、比刚度高和低温性能好等优点,但在钻削过程中易使普通的硬质合金刀具磨损。而金刚石涂层刀具在钻削较硬金属材料和非金属材料时,具有良好的切削加工性。通过CVD金刚石刀具与普通的硬质合金刀具对碳纤维复合材料的钻削试验对比以及两种刀具的磨损研究可以得出,CVD金刚石涂层刀具的钻削性能明显好于普通的硬质合金刀具。     

锥状TiO2纳米带制备及光电性质研究

采用化学气相沉积法,利用金属钛片为钛源,在金属Pd颗粒的催化下原位生长了锥状TiO2纳米带。扫描电镜(SEM)、XRD和透射电镜(TEM)表征结果表明所制备的锥状TiO2纳米带长度为数十微米,接近基底的底端宽度为1~4μm,顶端形成几十纳米的尖端;此纳米带晶型为金红石结构;锥状TiO2纳米带生长方向是长度方向为[110],横向是[001]方向。对比实验验证了金属Pd颗粒对锥状TiO2纳米带的生长初期起着重要的作用。笔者认为纳米带生长的初期由VLS生长机制决定,而固态Ti原子的扩散对锥状纳米带的形成起着重要的作用。单根TiO2纳米带不同位置的微区拉曼谱均有442cm-1、604cm-1两个响应带,分别对应着TiO2金红石相Eg和A1g的拉曼活跃模式。表面光电压谱的研究发现锥状TiO2纳米带具有良好的光电特性,在光催化、光电器件等领域具有潜在应用前景。