Structure and mechanical properties of W-Se-C/diamond-like carbon and W-Se/diamond-like carbon bi-layer coatings prepared by pulsed laser deposition

Bi-layer W-Se-C/diamond-like carbon (DLC) and WSe_x/DLC coatings were obtained by standard and shadow-masked pulsed laser co-deposition from WSe₂ and graphite targets. W-Se-C coatings appeared as nanocomposites containing quasi-amorphous WSe₂, WC, spherical β-W nanocrystalline particles encapsulated in WSe₂ amorphous shell, and amorphous carbon phases. In WSe_x/DLC coatings, the formation of chemical bonds between W and C atoms was noticed at the interface. An increase of the C concentration over 40 at.% increases hardness and elasticity (up to 2 times at ~ 60 at.%C), and the Se/W ratio was always close to 1.4. The use of shadow-masked configuration avoids the deposition of micro- and nanoparticles. However, this method leads to a substantial increase of the Se content (Se/W ≥ 4), and the coatings became softer.     

Efficient optimization of process parameters in shadow mask manufacturing using NNPLS and genetic algorithm

A shadow mask, the primary component of a cathode ray tube (CRT), is used to prevent the outer edges of electron beams from hitting incorrect phosphor dots. It is fabricated by means of a photo-etching process consisting of a few hundred/thousand process parameters. A primary concern in the management of the process is to determine the optimal process parameter settings necessary to sustain the desired levels of product quality. The characteristics of the process, including a large number of process parameters and collinear observed data, make it difficult to accomplish the primary concern. To cope with the difficulties, a two-phase approach is employed that entails the identification of a few critical process parameters, followed by determination of the optimal parameter settings. The former is obtained through the operator's domain knowledge and the NNPLS-based prediction model built between process parameters and quality defects. The latter is obtained by solving an optimization problem using a genetic algorithm (GA). A comparative study shows that the proposed approach improves product quality greatly in the shadow-mask manufacturing process.     

Fabrication of a submicron patterned electrode using an electrospun single fiber as a shadow-mask

We realize a uniform submicron-gap electrode by using an electrospun single fiber as a shadow-mask. By stretching an electrospun fiber, we can decrease the diameter of the fiber from 2 μm to 564 nm with its standard deviation of 57.7 nm. We place the fiber on the center of a Si/SiO₂ substrate followed by the deposition of a molybdenum trioxide adhesion layer and Au electrode. After removing the fiber from the Si/SiO₂ substrate, the submicron-gap gold electrode is formed. Characterization of the gap with scanning electron microscope revealed that the gap has a good uniformity; the average gap length is 865 nm throughout 2 mm gap width.