爱立信RBS2202设备停产后基站扩容问题的探讨

本报告分析了RBS2202设备停产后基站扩容过程中存在问题,提出了一些解决方案,并对这些方案的可行性进行了探讨.     

Micro-RBS characterisation of the chemical composition and particulate deposition on pulsed laser deposited Si1−xGex thin films

The formation and deposition of particulates by pulsed laser deposition of Si_1−xGe_x semiconductor alloy thin films are discussed. Using Rutherford backscattering spectrometry with micrometer lateral resolution (micro-RBS) the film composition was measured with high accuracy, even in the presence of particulates with a high areal density of 20,000–30,000 particulates per mm². We show that on impact of a particulate, the part of the thin film which is already deposited probably melts and its Ge content segregates to the surface.     

Development of enhanced depth-resolution technique for shallow dopant profiles

A rapid shrinkage in the minimum feature size of integrated circuits requires analysis of dopants in their shallow source–drain and their extensions with an enhanced depth resolution. Rutherford backscattering spectroscopy (RBS) combining a medium-energy He ion beam with a detector of improved energy resolution should meet the requirement of a depth resolution better than 5 nm at a depth of 10–20 nm in the next 10 years. A toroidal electrostatic analyzer of 4×10⁻³ energy resolution has been used to detect the scattered ions of a medium-energy He ion beam. Five keV As⁺ implanted Si or SiO₂ samples were measured. Depth profiling results using the above technique are compared with those of glancing-angle RBS by MeV energy He ions. Limitations in the energy resolution due to various energy-spread contributions have been clarified.     

Li-intercalation behaviour of vanadium oxide thin film prepared by thermal oxidation of vanadium metal

In order to produce thin films of crystalline V₂O₅, vanadium metal was thermally oxidised at 500 °C under oxygen pressures between 250 and 1000 mbar for 1-5 min. The oxide films were characterised by X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), X-ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS). The lithium intercalation performance of the oxide films was investigated by cyclic voltammetry (CV), chronopotentiometry and electrochemical impedance spectroscopy (EIS). It was shown that the composition, the crystallinity and the related lithium intercalation properties of the thin oxide films were critically dependent on the oxidation conditions. The formation of crystalline V₂O₅ films was stimulated by higher oxygen pressure and longer oxidation time. Exposure for 5 min at 750 mbar O₂ at 500 °C resulted in a surface oxide film composed of V₂O_5, and consisting of crystallites up to 200 nm in lateral size. The thickness of the layer was about 100 nm. This V₂O₅ oxide film was found to have good cycling performance in a potential window between 3.8 and 2.8 V, with a stable capacity of 117 ± 10 mAh/g at an applied current density of 3.4 μA/cm². The diffusion coefficients corresponding to the two plateaus at 3.4 and 3.2 V were determined from the impedance measurements to (5.2 and 3.0) × 10⁻¹³ cm² s⁻¹, respectively. Beneath the V₂O₅ layer, lower oxides (mainly VO₂) were found close to the metal. At lower oxygen pressure and shorter exposure times, the oxide films were less crystalline and the amount of V⁴⁺ increased in the surface oxide film, as revealed by XPS. At intermediate oxygen pressures and exposure times a mixture of crystalline V₂O₅ and V₆O₁₃ was found in the oxide film.     

考虑塑性铰外移的钢框架梁柱连接设计

介绍美国联邦突发事件管理局 (FEMA)对 1 994年北岭地震中焊接钢框架节点破坏原因的正式解释 ,说明塑性铰外移的必要性。此外 ,还介绍了塑性铰外移的两种基本形式以及狗骨式 (RBS)连接的有关设计规定和适用条件 ,其设计方法可供我国工程设计人员参考。     

钢管混凝土柱-混合梁节点抗震性能试验研究

提出适用于装配式大跨度组合框架结构的钢管混凝土柱-混合梁节点. 为了研究节点的抗震性能及受力机理,对2个足尺中柱节点试件进行低周往复加载试验. 2个试件分别采用混合梁端型钢翼缘削弱式(RBS)节点以及梁端普通型钢节点. 对2个节点的破坏形态、耗能能力、承载能力、延性以及混合梁的应变分布规律进行对比分析. 试验结果表明,对梁端型钢翼缘的削弱处理可以有效促进试件在翼缘削弱区形成塑性铰,避免梁端焊缝的脆性破坏. 相比型钢未经处理的节点,翼缘削弱节点展现出更好的延性和耗能能力;梁底附加钢筋屈服后的黏结滑移会影响节点的耗能能力,在锚固长度满足规范要求的前提下,应适当增加其配筋率,以防止过早出现附加钢筋屈服后的黏结滑移.     

The influence of an intermediate MoO3 layer on the solid state reaction of cobalt oxide withγ-Al2O3

In view of the importance for Co_xO_y,-MoO₃/-Al₂O₃ hydrodesulphurization (HDS) catalysts, the reactivity of cobalt oxide layers towards cobalt aluminate formation was investigated on both MoO₃-covered and bare -Al₂O₃ substrates. Co₃O₄/MoO₃/-Al₂O₃ and Co₃O₄/-Al₂O₃ systems were prepared by vapour-deposition of MoO₃ (12 × 10¹⁵ Mo atoms/cm²) and Co (400 × 10¹⁵ Co atoms/cm²) layers onto a -Al₂O₃ substrate, followed by oxidation of the Co layer to Co₃O₄. After annealing at 800°C for 40 h, the interfacial reaction to cobalt aluminate was assessed using Rutherford backscattering spectrometry. The presence of molybdenum oxide appeared to enhance cobalt aluminate formation. The Mo atoms, which spread out over the entire cobalt-containing layer, presumably caused a high defect density, which explains the observed higher reaction rate. The amount of MoO₃ was much too low to stabilize all cobalt atoms by cobalt molybdate formation.     

Pore Propagation Directions in P+ Porous Silicon

A comparative study is presented on the pore propagation directions of porous silicon layers (PSL) formed on p⁺-type substrates of different orientations. PSLs were formed on plain (0 0 1) and (1 1 1) silicon wafers as well as on structured (0 0 1) wafers containing facets of various orientations. During anodization, regular pores follow the 0 0 1 direction on the (0 0 1) planes. While on the (1 1 1) planes fewer regular pores develop and seemingly propagate closely to the 1 1 1 direction. These results indicate that the pores propagate perpendicular to the surface i.e. along the field lines when the surface orientation is either (0 0 1) or (1 1 1).When the silicon surface provided (1 1 0) orientation (Chuang, Collins, and Smith, 1989), or its position is in between the (0 0 1) and (1 1 1) planes then the pores do not propagate perpendicular to the surface but along the 0 0 1 direction.All the phenomena exhibited might be explained by presuming that during formation, the pores propagate along the 1 0 0 directions, and that those 1 0 0 directions are preferred which are closely to the field lines. In PSLs formed on (0 0 1) surfaces the field lines and the 0 0 1 crystallographic direction are coincident. However, in the (1 1 1) oriented wafer where three equally probable 1 0 0 directions exist around the field lines, more irregular structure of PSLs will develop.     

悬臂梁段不同拼接方式下延性节点静力性能分析

为了解决装配式钢结构的抗震问题,提出3种适用于模块化装配式钢框架的带Z字形悬臂梁段拼接的梁柱节点,通过拼接区的滑移或者削弱梁段的塑性变形实现节点良好的延性性能.为减少强震作用对梁柱连接焊缝的破坏,对3种不同的节点提出了各自的抗震设计要求.在对3组试件进行足尺静力试验的基础上,对节点进行了单调加载有限元分析.获得了节点的弯矩-转角曲线以及节点的破坏模式,并和试验结果进行了对比,得到了接触面摩擦力和螺栓拉力的变化规律.通过推导的简化计算公式对节点的初始转动刚度、滑移荷载和屈服荷载进行了计算.结果表明:节点静力加载的破坏模式为靠近拼接区域的悬臂梁下翼缘或者削弱梁段单独或者同时发生较大的局部屈曲变形,节点在破坏前经历了充分的塑性变形,属于延性破坏,3种试件都有良好的延性性能和塑性转动能力.节点简化计算公式得到的结果和试验结果吻合良好.     

RBF neural networks for solving the inverse problem of backscattering spectra

This paper investigates a new method to solve the inverse problem of Rutherford backscattering (RBS) data. The inverse problem is to determine the sample structure information from measured spectra, which can be defined as a function approximation problem. We propose using radial basis function (RBF) neural networks to approximate an inverse function. Each RBS spectrum, which may contain up to 128 data points, is compressed by the principal component analysis, so that the dimensionality of input data and complexity of the network are reduced significantly. Our theoretical consideration is tested by numerical experiments with the example of the SiGe thin film sample and corresponding backscattering spectra. A comparison of the RBF method with multilayer perceptrons reveals that the former has better performance in extracting structural information from spectra. Furthermore, the proposed method can handle redundancies properly, which are caused by the constraint of output variables. This study is the first method based on RBF to deal with the inverse RBS data analysis problem.