结构加固设计与东大迪普(SEU-DEEP)软件系统的研发

根据现行加固规范、规程以及其他相关的标准 ,编制了东大迪普 (SEU DEEP)结构加固设计软件系统 ,填补了国内关于结构加固设计领域计算机辅助设计的空白。介绍了结构加固设计的特点和东大迪普设计软件的编制思想及其主要功能     

民用飞机单粒子翻转问题研究

单粒子翻转(Single Event Upset,SEU)效应是机载复杂电子硬件设计所必须考虑的重要问题,对SEU效应进行了描述,分析了复杂电子设备经常用到的芯片类型(专用集成电路器件、反熔丝FPGA、SRAM型FPGA、Flash型FPGA)及其优缺点,总结了三模冗余、纠错码、擦洗、系统监控这四种常见的SEU减缓技术,对于国内民机机载复杂电子硬件的设计具有参考意义。     

星用微处理器在轨单粒子翻转率预估方法研究

运用程序占空比概念及故障注入技术对星用微处理器动态和静态单粒子翻转率间的关系进行了研究,并将预估结果与国外在轨飞行监测数据进行了对比。结果表明,由程序占空比计算所得动态单粒子翻转率可对星用微处理器在轨单粒子翻转率进行合理预估;故障注入技术是灵活、方便的动态单粒子翻转率预估方法。     

一种改进的对抗软错误电路结构设计

给出了一种改进的基于时钟沿的自我检测和纠正的电路结构,以纠正由单粒子翻转（SEU）引起的数据错误。简单概述了已有的检测和纠正SEU的电路结构,并在该电路的基础上提出了改进的电路结构,以实现对触发器以及SRAM等存储器的实时监控,并可以及时纠正其由于SEU引起的数据错误。采用内建命令进行错误注入模拟单粒子翻转对电路的影响。改进的电路与原来的电路相比,以微小的面积和较少的资源换取更高的纠错率。     

北京正负电子对撞机次级束质子单粒子翻转计算和试验研究

北京正负电子对撞机(BEPC)电子直线加速器试验束打靶产生的次级束中包含质子,其中能量约为50MeV~100MeV的质子占有很大比例,这弥补了国内高能质子源的空白。本工作计算得到次级束中的质子能谱,建立质子单粒子翻转截面计算方法,在北京正负电子对撞机次级束质子辐射环境中,计算静态随机存取存储器的质子单粒子翻转截面,设计了SRAM质子单粒子翻转截面测试试验,发现SRAM单粒子翻转和注量有良好的线性,这是SRAM发生单粒子翻转的证据。统计得到不同特征尺寸下SRAM单粒子翻转截面,试验数据与计算结果相符,计算和试验结果表明随着器件特征尺寸的减小器件位单粒子翻转截面减小,但器件容量的增大,翻转截面依然增大,BEPC次级束中的质子束可以开展中高能质子单粒子效应测试。     

一种新式SEU加固PD SOI SRAM单元

本文提出了一种新式SEU加固的10管PD SOI静态存储单元。通过将互锁反相器中的上拉和下拉管分割成两个串联的晶体管,该单元可有效抑制PD SOI晶体管中的寄生BJT和源漏穿通电荷收集效应,这两种电荷收集效应是引起PD SOISRAM翻转的主要原因。通过混合仿真发现,与穿通的浮体6T单元相比,该单元可完全解决粒子入射单个晶体管引起的单粒子翻转。通过分析该新式单元的翻转机制,认为其SEU性能近似与6T SOI SRAM的单粒子多位翻转性能相等。根据参考文献的测试数据,粗略估计该新式单元的SEU性能比普通45nm 6T SOI SRAM单元提升了17倍。由于新增加了四个晶体管,该单元在面积上增加了43.4%的开销,性能方面有所降低。     

Single event soft error in advanced integrated circuit

As technology feature sizes decrease, single event upset (SEU), and single event transient (SET) dominate the radiation response of microcircuits. Multiple bit upset (MBU) (or multi cell upset) effects, digital single event transient (DSET) and analogue single event transient (ASET) caused serious problems for advanced integrated circuits (ICs) applied in a radiation environment and have become a pressing issue. To face this challenge, a lot of work has been put into the single event soft error mechanism and mitigation schemes. This paper presents a review of SEU and SET, including: a brief historical overview, which summarizes the historical development of the SEU and SET study since their first observation in the 1970's; effects prominent in advanced technology, which reviews the effects such as MBU, MSET as well as SET broadening and quenching with the influence of temperature, device structure etc.; the present understanding of single event soft error mechanisms, which review the basic mechanism of single event generation including various component of charge collection; and a discussion of various SEU and SET mitigation schemes divided as circuit hardening and layout hardening that could help the designer meet his goals.     

Electrical performance study of 25 nm Ω-FinFET under the influence of gamma radiation: A 3D simulation

In this research paper, a 3D process simulation of 25 nm n-channel Ω-FinFET and the effect of Gamma radiation on device characteristics have been studied. Device simulations are carried out under the influence of Gamma radiation under varying does conditions from 100 Krad (SiO₂) to 10 Mrad (SiO₂). Effects of Gamma radiation on the threshold voltage, transfer characteristics, drive current, off-state leakage current and subthreshold characteristics have been studied. Extracted parameters for virgin and irradiated devices have been compared in order to understand the degradation in the electrical characteristics of the Ω-FinFET under study. Simulation results under the low drain and high drain bias has been reported and discussed. It is found that Ω-FinFET delivers better performance under irradiation as compared with conventional single gate MOS structures. Ω-FinFET is shown to be significantly tolerant to gamma radiation upto dose of 5 Mrad (SiO₂). In addition, the influence of quantum effects on this nanoscale device is investigated in detail. Sentaurus simulation results obtained has been compared with the reported experimental data.     

激光定位深亚微米CMOS SRAM单粒子翻转敏感区

The pulsed laser facility for SEU sensitivity mapping is utilized to study the SEU sensitive regions of a 0.18/zm CMOS SRAM cell. Combined with the device layout micrograph, SEU sensitivity maps of the SRAM cell are obtained. TCAD simulation work is performed to examine the SEU sensitivity characteristics of the SRAM cell. The laser mapping experiment results are discussed and compared with the electron micrograph information of the SRAM cell and the TCAD simulation results. The results present that the test technique is reliable and of high mapping precision for the deep submicron technology device.     

单粒子效应对航天器的威胁及空间飞行试验评论（二）

列举了若干航天器因单粒子效应而出现的异常或故障。阐述了单粒子效应空间飞行试验方法和预估方法。总结了多颗航天器单粒子效应空间飞行试验结果。依据空间飞行试验结果，对静止卫星、低太阳同步轨道卫星和椭圆轨道卫星在太阳宁静和太阳耀斑期间单粒子效应作了比较。