Breakdown characteristics of oil and paper insulation for a very fast transient voltage

This paper describes the dielectric breakdown characteristics of oil and oil‐impregnated paper for very fast transient (VFT) voltages. Blumlein circuits generate VFT voltages of 60 and 300 ns in a pulse width that simulates disconnecting switching surges in gas‐insulated switch gears. We measured the breakdown voltages of needle‐to‐plane, plane‐to‐plane oil gaps and several pieces of paper between plane electrodes for VFT and lightning impulse voltages. The measured data were formulated in V‐t characteristics and Weibull probability distributions. The inclination n of V‐t characteristics of insulating paper is 150, which is less than n = 13.7 of the plane‐to‐plane oil gap in the VFT time range. The shape parameters of Weibull distribution obtained in this study show that the scattering of breakdown voltages of paper is much less than that of oil. © 2002 Wiley Periodicals, Inc. Electr Eng Jpn, 141(4): 16–24, 2002; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.10043     

用于千兆以太网基带铜缆接收器均衡的甚高频自适应 连续时间Gm-C 二阶带通滤波器的研究和设计

本文设计了用于千兆以太网基带铜缆接收器均衡的甚高频自适应连续时间Gm-C二阶带通滤波器。基于最陡梯度下降算法，带通滤波器的零点在57－340MHz的频率范围内可以自适应地调节，中心频率为1.278GHz。通过外接电阻伺服环路，滤波器中跨导转换器的跨导值不受工艺偏差和温度变化的影响，采用CSMC－HJ0.6μm CMOS工艺器件模型，用Cadence Spectres仿真器仿真了设计的自适应滤波器电路，仿真结果验证了设计原理和设计的电路。系统的最长学习时间为880个参考时钟周期。     

From Long Infrared to Very Long Infrared Wavelength Focal Plane Arrays Made with HgCdTe n + n ?/ p Ion Implantation Technology

This paper aims at studying the feasibility of very long infrared wavelength (VLWIR) (12–18 μm) focal plane arrays using n-on-p planar ion-implanted technology. To explore and analyze the feasibility of such VLWIR detectors, a set of four Cd _x Hg_1−x Te LPE layers with an 18 μ cutoff at 50 K has been processed at Defir (LETI/LIR–Sofradir joint laboratory), using both our “standard” n-on-p process and our improved low dark current process. Several 320 × 256 arrays, 30-μm pitch, have been hybridized on standard Sofradir readout circuits and tested. Small dimension test arrays characterization is also presented. Measured photonic currents with a 20°C black body suggest an internal quantum efficiency above 50%. Typical I(V) curves and thermal evolution of the saturation current are discussed, showing that standard photodiodes remain diffusion limited at low biases for temperatures down to 30 K. Moreover, the dark current gain brought by the improved process is clearly visible for temperatures higher than 40 K. Noise measurements are also discussed showing that a very large majority of detectors appeared background limited under usual illumination and biases. In our opinion, such results demonstrate the feasibility of high-performance complex focal plane arrays in the VLWIR range at medium term.     

微纳级双极晶体管的热耗散研究

对于双极性晶体管,由于自身存在的自加热现象,严重地影响着器件的特性。基于热电流方程、泊松方程及电流密度方程,在二维器件仿真环境下,进行了微纳级小尺寸npn双极性晶体管热现象的器件物理特性分析。重点研究了器件的集电极电流IC与晶格温度T的因变关系。研究结果显示,随着IC的增加,器件的晶格温度逐渐升高,VCE保持在3.0V、VBE达到最大值0.735V时,随器件晶格温度的升高VBE将减小。最后,笔者给出了描述晶体管温变关系的三维曲线。     

气体绝缘封闭电器的高速瞬变过程和现场试验

随着ＧＩＳ的工作电压不断提高和发展，一系列新的现象和问题也同时出现。从国外一些科研，设计，制造部门所研究发表的内容看，大致有隔离开关操作和高速瞬变过程，粒子影响和对干扰定位的技术，元件的监督，现场试验等课题，本文对以上问题加以综合介绍。     

挡土墙填土曲线破裂面的地震主动土压力分析

在地震作用影响下，墙后填土处于极限平衡状态时，假定破裂面为一条通过墙趾的旋轮线。从墙后土楔中取出一微薄水平层，研究其在水平惯性力下的平衡，得到的地震土压力分布和土压力合力作用点位置均与实验结果相吻合。     

大规模集成电路浮栅ROM器件总剂量辐射效应

提出了一种大规模集成电路总剂量效应测试方法:在监测器件和电路功能参数的同时,监测器件功耗电流的变化情况,分析数据错误和器件功耗电流与辐射总剂量的关系.根据该方法利用60Co γ射线进行了浮栅ROM集成电路(AT29C256)总剂量辐照实验,研究了功耗电流和出错数量在不同γ射线剂量率辐照下的总剂量效应,以及参数失效与功能失效时间随辐射剂量率的变化关系,并利用外推实验技术预估了电路在空间低剂量率环境下的失效时间.     

一种VDSL上行链路自适应功率回馈方案

上行链路功率回馈技术(UPBO：upstream power back-off)是VDSL(very high-speed digital subscriber lines)系统中的关键技术，它用于抵消同一电缆中短线对长线引起的严重的远端串扰(FEXT:far-end crosstalk)。文中从功率控制的角度分析了基于迭代注水的自适应UPBO方案，并进行了性能仿真分析。     

10Gbit/s甚短距离传输系统接收模块研究

本文研究了符合OIF—VSR4—01．0规范的甚短距离（VSR）并行光传输系统转换器集成电路，实现了接收部分转换器集成电路中帧同步、8B／10B解码、12路通道去斜移、检错纠错等模块的设计。在Altera的Stratix GX系列的FPGA上实现了接收部分转换器集成电路。仿真分析的结果表明所设计的各个模块能正确的实现接收部分转换器集成电路的功能，给出了仿真结果。     

基于SWT的GIS电压互感器二次侧干扰分析

特快速暂态过电压（VFTO）是气体绝缘变电站（GIS）中切换隔离开关时产生的特殊电磁暂态现象。VFTO会以传导和辐射方式影响二次设备的正常运行。为探究VFTO对二次设备的干扰特性,文中采用自制的二次侧干扰测量装置对某1 000 kV GIS的电压互感器（PT）二次侧共模干扰进行现场实测。接着,对比了5种时频分析方法的性能,采用其中性能较优的同步压缩小波变换（SWT）对实测波形进行了时频分析。实测结果表明：PT二次侧的共模干扰电压峰峰值最高可达9.65 kV。微脉冲的时频分析结果表明：7.8 MHz频率分量幅值高,且贯穿波形的始终,是PT二次侧干扰的主导频率分量。该分析结果可为GIS中二次设备的电磁抗扰度测试和电磁防护设计提供参考。