Boron removal by titanium addition in solidification refining of silicon with Si-Al melt |
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| Authors: | Takeshi Yoshikawa Kentaro Arimura Kazuki Morita |
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| Affiliation: | (1) Present address: Department of Materials Engineering, The University of Tokyo, 113-8656 Tokyo, Japan;(2) Daiwa Securities Co. Ltd., 100-8101 Tokyo, Japan |
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| Abstract: | In order to effectively remove B from Si for its use in solar cells, a process involving B removal by solidification refining
of Si using a Si-Al melt with Ti addition was investigated. For clarifying the effect of Ti addition on B removal from the
Si-Al melt, TiB2 solubilities in Si-64.6 at. pct Al melt at 1173 K and Si-60.0 at. pct Al melt at 1273 K were determined by measuring the
equilibrium concentrations of B and Ti in the presence of TiB2 precipitates. The small solubilities of TiB2 in the Si-Al melt indicate the effective removal of B from the Si-Al melt by Ti addition. Further, solidification experiments
of Si-Al alloys containing B by Ti addition were performed, and the effect of Ti addition on the solidification refining of
Si with the Si-Al melt was successfully confirmed. |
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