GaAs backside via-hole etching using ICP system |
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| Authors: | Wang HaiLing Guo Xia Shen GuangDi |
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| Affiliation: | Beijing Optoelectronic Technology Laboratory, Institute of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China |
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| Abstract: | A high etch rate GaAs via-hole process was studied in an inductively coupled plasma system using Cl2/BCl3 gas system. The effects of process parameters on the GaAs etch rate were investigated. The influences of photoresist SiO2 and Ni masks on the resultant profiles were also studied by scanning electron microscopy. A maximum etch rate of 8.9 μm/min
was obtained and the etched profiles were optimized.
Supported by the National Natural Science Foundation of China (Grant No. 60506012), Beijing Education Committee Project (Grant
No. KZ200510005003), Beijing Municipal Talented Person Education Plan Item (Grant No. 05002015200504), Beijing Municipal Scientific
New-star Plan (Grant No. 2005A11) and the Hi-Tech Research and Development Program of China (Grant No. 2006AA03A121) |
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| Keywords: | via-hole GaAs inductively coupled plasma etching |
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