| MOSFET衬底电流模型及参数提取 |
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| 引用本文： | 刘永强,于奇,刘玉奎,李竞春,陈勇.MOSFET衬底电流模型及参数提取[J].微电子学,1999,29(3):174-177. |
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| 作者姓名： | 刘永强 于奇 刘玉奎 李竞春 陈勇 |
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| 作者单位： | 1. 电子科技大学微电子科学与工程系
2. 电子工业部第二十四研究所 |
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| 基金项目： | 国家自然科学基金,国防预研资助 |
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| 摘 要： | 在短沟道ＭＯＳＦＥＴ器件物理的基础上，导出了其衬底电流解析模型，并通过实验进行了模型参数提取。模型输出与短沟ＭＯＳＦＥＴ实测结果比较接近，可应用于ＶＬＳＩ／ＵＬＳＩ可靠性模拟与监测研究和亚微米ＣＭＯＳ电路设计。
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| 关 键 词： | MOSFET 半导体器件 衬底电流模型 参数提取 |
Substrate Current Model for MOSFETs and Its Parameter Extraction |
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| LIU Yong-Qiang,YU Qi,LIU Yu-Kui,LI Jing-Chun,CHEN Yong.Substrate Current Model for MOSFETs and Its Parameter Extraction[J].Microelectronics,1999,29(3):174-177. |
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| Authors: | LIU Yong-Qiang YU Qi LIU Yu-Kui LI Jing-Chun CHEN Yong |
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| Affiliation: | LIU Yong Qiang,YU Qi,LIU Yu Kui ,LI Jing Chun and CHEN Yong Dept. Microelec. Sci. and Engineer.,Univ. Elec. Sci. and Technol. of China,Chengdu 610054 Sichuan Institute of Solid State Circuits,Chongqing 400 |
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| Abstract: | An analytical substrate current model for short channel MOSFETs is derived based on its physics. Parameters of the model are extracted in an experiment. Result from the model is comparable with the measured data of short channel MOSFETs. It is applicable for reliability simulation and monitoring of VLSI/ULSI, and for design of submicron CMOS circuits. |
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| Keywords: | MOSFET Semiconductor device Substrate current model Parameter extraction |
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