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| 808nm波长锁定大功率半导体激光器列阵 | |
| 引用本文： | 安振峰,黄科,邓海丽. 808nm波长锁定大功率半导体激光器列阵[J]. 微纳电子技术, 2011, 48(5): 296-299. DOI: 10.3969/j.issn.1671-4776.2011.05.004 |
| 作者姓名： | 安振峰 黄科 邓海丽 |
| 作者单位： | 1. 中国电子科技集团公司,第十三研究所,石家庄,050051 2. 石家庄信息工程职业学院,石家庄,050000 |
| 摘 要： | 大功率半导体激光器列阵(DLA)具有功率高、电光转换效率高、可靠性强、寿命长、体积小及成本低等诸多优点,但其波长随温度变化较大,光谱线宽较宽,这些缺点直接限制了其实际应用.为了解决此问题,采用体布拉格光栅(VBG)构成波长锁定大功率半导体激光器系统.体布拉格光栅可以把波长锁定,同时把光谱线宽压窄,从而有效改善了DLA波... |
| 关 键 词： | 大功率半导体激光器列阵 体布拉格光栅(VBG) 外腔 波长锁定 光谱线宽 808nm |
808 nm Wavelength Locked High Power Semiconductor Laser Array |
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| An Zhenfeng,Huang Ke,Deng Haili. 808 nm Wavelength Locked High Power Semiconductor Laser Array[J]. Micronanoelectronic Technology, 2011, 48(5): 296-299. DOI: 10.3969/j.issn.1671-4776.2011.05.004 | |
| Authors: | An Zhenfeng Huang Ke Deng Haili |
| Affiliation: | An Zhenfeng1,Huang Ke1,Deng Haili2(1.The 13th Research Institute,CETC,Shijiazhuang 050051,China,2.Shijiazhuang Information Engineering Vocational College,Shijiazhuang 050000,China) |
| Abstract: | High-power diode laser array(DLA)has many advantages,such as high power,high electro-optical conversion efficiency,high reliability,long life,small size and low cost.But the wavelength of the high-power DLA changes with the temperature obviously and the spectral width is wider.These disadvantages directly limit practical application.In order to solve the problems,the wavelength locked high power semiconductor laser system was constructed by volume Bragg grating(VBG).The wavelength of the high-power DLA is l... |
| Keywords: | high-power diode laser array volume Bragg grating(VBG) external cavity wavelength locked spectral line width 808 nm |
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