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Super junction LDMOS with enhanced dielectric layer electric field for high breakdown voltage |
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| Authors: | Wang Wenlian Zhang Bo Li Zhaoji |
| Affiliation: | 1. State Key Laboratory of Electronic Measurement Technology, North University of China, Taiyuan 030051, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 641500, China 2. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 641500, China |
| Abstract: | The lateral super junction(SJ) power devices suffer the substrate-assisted depletion(SAD) effect,which breaks the charge balance of SJ resulting in the low breakdown voltage(BV).A solution based on enhancing the electric field of the dielectric buried layer is investigated for improving the BV of super junction LDMOSFET (SJ-LDMOS).High density interface charges enhance the electric field in the buried oxide(BOX) layer to increase the block voltage of BOX,which suppresses the SAD effect to achieve the charge... |
| Keywords: | super junction LDMOS substrate-assisted depletion effect |
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