An experimental method to analyse trapping centres in silicon at very low concentrations

The presence of trapping centres in bulk charge coupled devices can contribute to the charge transfer inefficiency of such devices even when the concentration of the traps is only 10¹⁰cm⁻³. We have developed a measuring method which can detect traps at concentrations down to 10⁸cm⁻³. The measurement yields the concentration, emission time constant and activation energy of the traps.