Al0.48In0.52As/Ga0.47In0.53As resonant tunnelling diodes with large current peak/valley ratio |
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| Authors: | Lakhani A.A. Potter R.C. Beyea D. Hier H.H. Hempfling E. Aina L. O'Conner J.M. |
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| Affiliation: | Bendix Aerosp. Technol. Center, Allied-Signal Corp., Columbia, MD; |
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| Abstract: | Resonant tunnelling diodes consisting of an MBE-grown AlInAs barrier on each side of a lattice-matched GaInAs well have been fabricated. Current peak/valley ratios up to 7.1 and 39 have been measured at 300 K and 77 K, respectively. These represent the largest values reported to date in any double-barrier, single-well device. The enhanced peak/valley ratio has been attributed to thick barriers (72 Å) and wide, undoped GaInAs spacer layers (400 Å) |
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