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Horizontal unseeded vapor growth of Iv-Vi compounds and alloys
Authors:T. C. Harman  J. P. McVittie
Affiliation:(1) Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts
Abstract:
Large, high-quality crystals of various Pb-salt compounds and alloys have been grown from the vapor by a horizontal, unseeded, closed-tube method. The optimum growth conditions have been experimentally determined. The crystalline imperfections and electrical properties of the crystals were examined. In a series of growth experiments on PbTe, the source materials were prepared by adding small quantities of Pb to much larger quantities of zone-melted PbTe. This method makes it possible to control the source and as-grown crystal compositions for excess Pb or Te concentrations in the 1018/cm3 range. From the results of these experiments it was found that the composition of zone-melted PbTe (i. e., the maximum-melting point composition of PbTe) corresponds to a hole concentration of approximately 1 x l019/cm3. This work was sponsored by the Department of the Air Force.
Keywords:Pb1-xSnxTe  PbS1-xSex   Pb1-xSnxSe  vapor crystal growth  electrical properties  dislocations
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