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Modeling turn-off voltage rise in SOI LIGBT |
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| Authors: | Ettore Napoli Vasantha Pathirana Florin Udrea |
| Affiliation: | (1) Electronic Engineering and Telecommunications Department, University of Napoli “Federico II”, Via Claudio, 21, 80125 Napoli, Italy;(2) The Department of Engineering, Cambridge University, Trumpington street, Cambridge, CB2 1PZ, UK |
| Abstract: | |
| Keywords: | Insulated gate bipolar transistor (IGBT) Power semiconductor devices Semiconductor device modeling Silicon-on-insulator (SOI) technology Switching transient |
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