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Direct Growth of High Mobility and Low‐Noise Lateral MoS2–Graphene Heterostructure Electronics |
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| Authors: | Amirhossein Behranginia Poya Yasaei Arnab K Majee Vinod K Sangwan Fei Long Cameron J Foss Tara Foroozan Shadi Fuladi Mohammad Reza Hantehzadeh Reza Shahbazian‐Yassar Mark C Hersam Zlatan Aksamija Amin Salehi‐Khojin |
| Affiliation: | 1. Department of Mechanical and Industrial Engineering, University of Illinois at Chicago, Chicago, IL, USA;2. Electrical and Computer Engineering Department, University of Massachusetts Amherst, Amherst, MA, USA;3. Department of Materials Science and Engineering, Northwestern University, Evanston, IL, USA;4. Department of Mechanical Engineering, University of Michigan Tech, Houghton, MI, USA;5. Department of Civil and Material Engineering, University of Illinois at Chicago, Chicago, IL, USA;6. Department of Physics, University of Illinois at Chicago, Chicago, IL, USA;7. Department of Chemistry, Northwestern University, Evanston, IL, USA |
| Abstract: | Reliable fabrication of lateral interfaces between conducting and semiconducting 2D materials is considered a major technological advancement for the next generation of highly packed all‐2D electronic circuitry. This study employs seed‐free consecutive chemical vapor deposition processes to synthesize high‐quality lateral MoS2–graphene heterostructures and comprehensively investigated their electronic properties through a combination of various experimental techniques and theoretical modeling. These results show that the MoS2–graphene devices exhibit an order of magnitude higher mobility and lower noise metrics compared to conventional MoS2–metal devices as a result of energy band rearrangement and smaller Schottky barrier height at the contacts. These findings suggest that MoS2–graphene in‐plane heterostructures are promising materials for the scale‐up of all‐2D circuitry with superlative electrical performance. |
| Keywords: | 1/f noise graphene Kelvin probe force microscopy lateral (in‐plane) heterostructures MoS2 |