Electromigration effects in power MESFET rectifying and ohmic contacts |
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| Authors: | Canali C. Chiussi F. Fantini F. Umena L. vanzi M. |
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| Affiliation: | Università di Padova, Istituto di Electtrotecnica ed Elettronica, Padova, Italy; |
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| Abstract: | Both gate and source/drain electromigration are significant failure mechanisms in power MESFTs. The correlation between electromigration effects due to high current density and measured electrical degradation is investigated in devices of different technologies. A safety zone of operation for ohmic contact electromigration is defined. |
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