A quantum-dot heterostructure transistor with enhanced maximum drift velocity of electrons |
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| Authors: | V Mokerov J Požela K Požela V Juciene |
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| Affiliation: | (1) Institute of Microwave Semiconductor Electronics, Russian Academy of Sciences, Moscow, 117105, Russia;(2) Semiconductor Physics Institute, Vilnius, 01108, Lithuania |
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| Abstract: | A new type of heterotransistor based on an AlGaAs/GaAs/InAs/GaAs/InAs structure with a layer of InAs quantum dots embedded directly into the GaAs channel is fabricated. High values of the maximum saturation current (up to 35 A/cm) and transconductance (up to 1300 mS/mm) are attained. The specific features of the current-voltage characteristics of the new device are explained in the context of a model that takes into account the ionization of quantum dots in high electric fields and tenfold enhancement of the electron drift velocity in a structure with an InAs quantum-dot layer in the vicinity of an AlGaAs/GaAs heterojunction. |
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