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脉冲激光外延生长YBa2Cu3O7–δ涂层导体LaMnO3缓冲层
引用本文:刘宗洁,鲁玉明,范峰,刘志勇,蔡传兵.脉冲激光外延生长YBa2Cu3O7–δ涂层导体LaMnO3缓冲层[J].电子元件与材料,2012(2).
作者姓名:刘宗洁  鲁玉明  范峰  刘志勇  蔡传兵
作者单位:上海大学 物理系,上海 200444
基金项目:国家自然科学基金资助项目(No. 10774098, No. 50702033);上海市科委项目资助(No. 08521101502,No. 10dz1203500);上海市重点学科项目资助(No. S30105)
摘    要:采用脉冲激光沉积技术在双轴织构的Ni95W5(Ni-5W)合金基底上外延生长了LaMnO3(LMO)薄膜作为涂层导体缓冲层,研究了沉积温度对LMO薄膜生长织构和表面形貌的影响。研究结果表明:沉积温度对LMO薄膜的表面形貌有一定的影响;在沉积温度为650 ℃时,LMO薄膜具有良好的(00l)取向,薄膜表面平整均匀,光滑致密,其均方根粗糙度在2 nm以下;而且,在此LMO缓冲层上外延生长的YBa2Cu3O7–δ超导层具有良好的双轴织构,超导转变温度Tc为92 K,转变宽度小于1 K,临界电流密度Jc为5.3×105 A/cm2(77 K,自场)。

关 键 词:缓冲层  涂层导体  双轴织构  RABiTS  LaMnO3

Epitaxial growth of LaMnO3 buffer layers for YBa2Cu3O7–δcoated conductors using pulsed laser deposition
LIUZongjie,LUYuming,FANFeng,LIUZhiyong,CAIChuanbing.Epitaxial growth of LaMnO3 buffer layers for YBa2Cu3O7–δcoated conductors using pulsed laser deposition[J].Electronic Components & Materials,2012(2).
Authors:LIUZongjie  LUYuming  FANFeng  LIUZhiyong  CAIChuanbing
Abstract:LaMnO3 (LMO) thin films, as a single buffer layer of coated conductors, were epitaxially grown on the biaxially textured Ni95W5 (Ni-5W) alloy substrates by pulsed laser deposition (PLD). The effects of deposition temperature on the growth texture and surface morphology of the LMO films were investigated. The results show that: the deposition temperature has some effect on the surface morphology of the LMO films. At a deposition temperature of 650 ℃, the prepared LMO film possesses perfect (00l) orientation and shows a flat, smooth, dense and uniform surface with the root mean square (RMS) roughness below 2 nm; Moreover, the YBa2Cu3O7–δ superconducting layer epitaxially grown on this LMO film exhibits a good biaxial texture, a superconducting transition temperature (Tc) of 92 K with the transition width below 1 K, and a critical current density (Jc) of 5.3×105 A/cm2 at 77 K in self-fields.
Keywords:buffer layers  coated conductors  biaxial texture  RABiTS  LaMnO3
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