| GaAs双栅MESFET单片行波混频器 |
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| 引用本文： | 周忠民,陈克金.GaAs双栅MESFET单片行波混频器[J].固体电子学研究与进展,1991,11(3):198-202. |
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| 作者姓名： | 周忠民 陈克金 |
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| 作者单位： | 南京电子器件研究所 210016
(周忠民，陈克金，过常宁)，南京电子器件研究所 210016(林金庭) |
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| 摘 要： | 本文根据GaAs MESFET单片行波放大器的原理,研制了一种新型宽带单片混频器.混频电路制在厚为0.1mm,面积为2.7×1.8mm的GaAs基片上,RF和LO分别通过等效特性阻抗为50Ω的G_1线和G_2线进入混频电路,且这两个频率在4个GaAs双栅MESFET(DGFET)中混频.这种MMIC混频器在中频频率为1.0GHz.射频频率在2～12GHz范围内得到约为8.5dB的变频损耗(无中频匹配电路),其平坦度约为±0.6dB.这一结果有助于进一步研究与实现单片宽带微波接收机.
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| 关 键 词： | 混频器 行波混频器 MESFET GaAs |
A Monolithic GaAs Dual-Gate MESFET Traveling-Wave Mixer |
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| Abstract: | Based on the principle of GaAs MESFET monolithic traveling-wave amplifiers, this paper describes a novel broadband monolitbic mixer with a chip size of 2.7×1.8×0.1mm. RF and LO signals are coupled to the mixer circuit by a gate-1 line and a gate-2 line with 50Ωeffective characteristic impedances, respectively. Then the two frequencies are mixed in four DGFETs (dual-gate MESFETs). The monolithic miser provides about 8.5dB conversion loss with ±0.6dB flatness in the frequency range of 2-12GHz, at 1.0GHz of IF frequency. The results are useful for further research on wideband fully monolithic misers. |
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